scholarly journals Charge state and nonlinear stopping power of heavy ions in a fully ionized plasma

1996 ◽  
Vol 14 (4) ◽  
pp. 781-788 ◽  
Author(s):  
O. Boine-Frankenheim ◽  
C. Stöckl
Keyword(s):  
Charge State ◽  
Heavy Ions ◽  
Stopping Power ◽  
Poisson System ◽  
Atomic Processes ◽  
Coupling Parameters ◽  
Parallel Supercomputers ◽  
New Generation ◽  
Mean Charge ◽  
Good Agreement

Due to the high nonequilibrium charge states specific to heavy ions, the plasma regime with coupling parameters l/ND < 1 and Zp/ND > 1 (ND ∼ number of electrons in a Debye sphere, Zp mean charge state of the projectile) is of interest for the applications. In this regime the stopping power cannot be obtained by a linearization of the Vlasov-Poisson system, but forcing a fully nonlinear treatment. In the present paper the Vlasov-Poisson system is solved numerically by using the capability of the new generation of massively parallel supercomputers. The results are compared with the standard dielectric theory and a binary collision approach. Charge-state calculations are performed, accounting for all relevant features of the atomic processes and the spectra characteristic to heavy ions in dense plasma targets. The results show good agreement with experimental measurement for medium and heavy ions penetrating a Z-pinch device.

scholarly journals Classical calculation of multiple-ionization cross-sections of noble gases near Bragg peak energies

2013 ◽  
Vol 31 (4) ◽  
pp. 561-565 ◽  
Author(s):  
Man Zhou ◽  
Xianrong Zou ◽  
Shiyao Wang ◽  
Chuan Cheng ◽  
Wang Zhou ◽  
...  
Keyword(s):  
Charge State ◽  
Cross Sections ◽  
Bragg Peak ◽  
Noble Gases ◽  
Computation Time ◽  
Charge State Distribution ◽  
Multiple Ionization ◽  
Ionization Cross Sections ◽  
Mean Charge ◽  
Good Agreement

AbstractIn this paper, we extend our previous work of classical over barrier ionization (COBI) model to study the multiple-ionization and mean charge state of noble gases colliding with heavy ions at energies close to the Bragg peak region ranging up to some hundreds of keV/amu. The method we report is in good agreement with experimental data and offers the advantage of very small computation time. Therefore, this model will be extremely helpful to be included in numerical codes to calculate the charge state distribution in plasma.

scholarly journals Stopping power of dense helium plasma for fast heavy ions

2003 ◽  
Vol 21 (1) ◽  
pp. 7-11 ◽  
Author(s):  
J. HASEGAWA ◽  
N. YOKOYA ◽  
Y. KOBAYASHI ◽  
M. YOSHIDA ◽  
M. KOJIMA ◽  
...  
Keyword(s):  
Energy Loss ◽  
Electron Density ◽  
Heavy Ions ◽  
Dense Plasma ◽  
Interaction Process ◽  
Stopping Power ◽  
Helium Plasma ◽  
The Difference ◽  
Mean Charge ◽  
Time Of Flight Method

The interaction process between fast heavy ions and dense plasma was experimentally investigated. We injected 4.3-MeV/u or 6.0-MeV/u iron ions into a z-pinch-discharge helium plasma and measured the energy loss of the ions by the time of flight method. The energy loss of 4.3-MeV/u ions fairly agreed with theoretical prediction when the electron density of the target was on the order of 1018 cm−3. With increasing electron density beyond 1019 cm−3, the difference between the experiment and the theory became remarkable; the experimental energy loss was 15% larger than the theoretical value at the peak density. For 6.0-MeV/u ions, the deviation from the theory appeared even at densities below 1019 cm−3. These discrepancies indicated that density effects such as ladderlike ionization caused the enhancement of the projectile mean charge in the target.

scholarly journals Atomic processes in ionic projectiles in plasma: End-of-the-range effects

1990 ◽  
Vol 8 (4) ◽  
pp. 635-641 ◽  
Author(s):  
E. Nardi ◽  
Z. Zinamon
Keyword(s):  
Charge State ◽  
Direct Measurement ◽  
Plasma Column ◽  
Hydrogen Plasma ◽  
Stopping Power ◽  
Atomic Processes ◽  
Power Theory ◽  
Spectroscopic Diagnostics ◽  
Experimental Systems ◽  
Narrow Region

The charge state and the level populations of ionic projectiles that are stopped in hydrogen plasma are calculated in the average ion model. It is shown that in available experimental systems the parameters can be chosen such that the end of the range will occur inside the plasma column. The predicted narrow region over which recombination occurs can be used as a check on plasma stopping-power theory and as a direct measurement of the range, using spectroscopic diagnostics.

scholarly journals Measurements of charge state distributions of 0.74 and 1.4  MeV/u heavy ions passing through dilute gases

2017 ◽  
Vol 20 (4) ◽  
Author(s):  
P. Scharrer ◽  
Ch. E. Düllmann ◽  
W. Barth ◽  
J. Khuyagbaatar ◽  
A. Yakushev ◽  
...  
Keyword(s):  
Charge State ◽  
Heavy Ions ◽  
Dilute Gases ◽  
Charge State Distributions

The influence of nonthermal particles and radiation on the charge state of heavy ions in solar cosmic rays

2004 ◽  
Vol 48 (9) ◽  
pp. 759-768
Author(s):  
Yu. Yu. Kartavykh ◽  
V. M. Ostryakov ◽  
E. Möbius ◽  
M. A. Popecki
Keyword(s):  
Cosmic Rays ◽  
Charge State ◽  
Heavy Ions ◽  
Solar Cosmic Rays ◽  
Nonthermal Particles

Stopping power of heavy ions in solids: A comparative study

1995 ◽  
Vol 46 (1) ◽  
pp. 39-52 ◽  
Author(s):  
S.K. Sharma ◽  
Shyam Kumar ◽  
J.S. Yadav ◽  
A.P. Sharma
Keyword(s):  
Comparative Study ◽  
Heavy Ions ◽  
Stopping Power

Compact modeling of the high temperature effect on the single event transient current generated by heavy ions in SOI 6T-SRAM

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000077-000082 ◽  
Author(s):  
E. Boufouss ◽  
J. Alvarado ◽  
D. Flandre
Keyword(s):  
Heavy Ions ◽  
Transient Current ◽  
Compact Modeling ◽  
Single Event ◽  
Single Event Transient ◽  
Sram Cell ◽  
Physical Simulations ◽  
Simulation Time ◽  
Good Agreement ◽  
High Temperature Effect

A temperature dependence analysis of the single event transient current induced by heavy ions irradiation is performed in the range of 300K to 500K on a 1μm SOI CMOS MOSFET standard 6T-SRAM cell. The Sentaurus TCAD mixed-mode numerical simulation showed a significant impact of the temperature on the current induced by the radiation and as a result, an increase of the 6T-SRAM sensitivity upon radiation. A SOI MOSFET compact model introduced in SPICE as a Verilog-A module reproducing the single event effects was developed. This model shows a very good agreement with the TCAD simulations results but with a drastic reduction of the simulation time. Furthermore this model could be extended to other circuits simulations. This result is of importance to allow for extensive circuit design studies which cannot be carried out with TCAD physical simulations.

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