scholarly journals Lattice Image Contrast of Ordered Domains in Cu3Au

1974 ◽  
Vol 32 ◽  
pp. 500-501
Author(s):  
R. Sinclair ◽  
G. Thomas
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Crystal Lattice ◽  
Fine Scale ◽  
Lattice Imaging ◽  
Lattice Image ◽  
Transmission Electron ◽  
Radiation Induced ◽  
Considerable Controversy ◽  
Lattice Planes

Although lattice Imaging was one of the first techniques in transmission electron microscopy of crystals, only with the improved resolution (≃2Å) of modern microscope has it become possible to obtain the lattice Image of metals as a matter of routine. To date fine-scale phenomena in alloys have been studied principally by relating the distortion of the fringe image to the defect in the crystal lattice ﹛e.g. dislocation, radiation induced damage, G-P zones etc. (2)﹜ but considerable controversy exists as to the validity of interpreting the fringes in terms of a one-to-one correspondence with the lattice planes in the specimen. One of the areas of research so Ear unexplored by this technique is the study of ordering reaction is alloy. The present paper demonstrates how it is particularly useful in this field especially in avoiding the controversy associated with the interpretation of fringe distortions.

Annealing Of Radiation Damage in Tungsten

1970 ◽  
Vol 28 ◽  
pp. 412-413
Author(s):  
Robert C. Rau ◽  
John Moteff
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Radiation Damage ◽  
Thermal Annealing ◽  
Neutron Fluence ◽  
Dislocation Loops ◽  
Defect Clusters ◽  
Polycrystalline Tungsten ◽  
Transmission Electron ◽  
Radiation Induced

Transmission electron microscopy has been used to study the thermal annealing of radiation induced defect clusters in polycrystalline tungsten. Specimens were taken from cylindrical tensile bars which had been irradiated to a fast (E > 1 MeV) neutron fluence of 4.2 × 1019 n/cm2 at 70°C, annealed for one hour at various temperatures in argon, and tensile tested at 240°C in helium. Foils from both the unstressed button heads and the reduced areas near the fracture were examined.Figure 1 shows typical microstructures in button head foils. In the unannealed condition, Fig. 1(a), a dispersion of fine dot clusters was present. Annealing at 435°C, Fig. 1(b), produced an apparent slight decrease in cluster concentration, but annealing at 740°C, Fig. 1(C), resulted in a noticeable densification of the clusters. Finally, annealing at 900°C and 1040°C, Figs. 1(d) and (e), caused a definite decrease in cluster concentration and led to the formation of resolvable dislocation loops.

Radiation Induced Formation of Acrylated Palm Oil (APO) Nanoparticles Using Cetyltrimethylammonium Bromide Microemulsion System

2011 ◽  
Vol 364 ◽  
pp. 278-282
Author(s):  
Rida Tajau ◽  
Dahlan Khairul Mohd. Zaman ◽  
Mohd Hilmi Mahmood ◽  
Wan Md Zin Wan Yunus ◽  
Hashim Kamaruddin
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Palm Oil ◽  
Chemical Structure ◽  
Cetyltrimethylammonium Bromide ◽  
Control Process ◽  
Microemulsion System ◽  
Transmission Electron ◽  
Radiation Induced ◽  
The Fourier Transform

In this study, we report the preparation of Acrylated Palm Oil (APO) nanoparticles using aqueous Cetyltrimethylammonium bromide (CTAB) microemulsion system. This microemulsion system which contains the dispersed APO nanodroplets was subjected to the gamma irradiation to induce the formation of the crosslinked APO nanoparticles. The dynamic light scattering (DLS), the Fourier Transform Infrared (FTIR) spectrocospy and the Transmission Electron Microscopy (TEM) were used to characterize the size and the chemical structure of the nanoparticle. Sized of the APO nanoor microparticle can be varied depended on the volumes of the modified palm oil and the irradiation doses. Their size is in the range of 73 to 100 nanometer (nm) after irradiation using gamma irradiator. This radiation-induced method provides a free initiator induced and easy to control process as compared to the classical or chemical initiator process.

Formation of iodine-doped C60 whiskers by the use of liquid–liquid interfacial precipitation method

2002 ◽  
Vol 17 (9) ◽  
pp. 2205-2208 ◽  
Author(s):  
Kun'ichi Miyazawa ◽  
Koichi Hamamoto
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Precipitation Method ◽  
Face Centered Cubic ◽  
Transmission Electron ◽  
Tetragonal Crystal ◽  
Axis Parallel ◽  
Tetragonal Crystal System ◽  
Lattice Planes ◽  
Face Centered

Iodine-doped whiskers of C60 (I–C60 whiskers) with diameters ranging from submicrometers to micrometers and lengths longer than 100 μm were successfully obtained by the use of the liquid–liquid interfacial precipitation method. Transmission electron microscopy observations showed that the I–C60 whiskers were single crystalline and had a growth axis parallel to the close-packed direction of C60 molecules and expanded (002) lattice planes indicative of the intercalation of iodine and oxygen atoms between the (002) planes of a body-centered-tetragonal crystal system. The I–C60 whiskers showed nonlinear I-V curves. The electrical resistivity of the I–C60 whiskers was more than three orders of magnitude lower than that of pristine face-centered-cubic C60 crystals.

Synthesis of NiSi2 by 6 MeV Ni implantation into silicon

1988 ◽  
Vol 3 (6) ◽  
pp. 1238-1246 ◽  
Author(s):  
J. K. N. Lindner ◽  
E. H. te Kaat
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Depth Distribution ◽  
Depth Profiling ◽  
Type A ◽  
High Dose ◽  
Metal Atoms ◽  
Transmission Electron ◽  
Defective Layer ◽  
Lattice Planes

Six MeV high-dose Ni implantation into silicon has been applied to synthesize deep-buried metallic layers. These layers have been analyzed by optical reflectivity and spreading resistance depth profiling as well as transmission electron microscopy and cross-section transmission electron microscopy. Already in the as-implanted state, at target temperatures of 450 K and doses above 1017 Ni/cm2, epitaxial precipitates of NiSi2 are formed. They grow in type-A and type-B orientations. In addition to these polyhedral crystallites, thin NiSi2 platelets on {111} lattice planes exist. At a dose of 1.3 × 1018 Ni/cm2, a continuous but highly defective layer of epitaxial NiSi2 is formed by coalescence of mainly type-A precipitates at the maximum of the Ni profile. Investigations indicate that damage gettering of nickel atoms as well as the atomic density increase during implantation influence the depth distribution of implanted metal atoms. Moreover, a suppression of silicon amorphization by nickel is evident.

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