Scanning Electron Diffraction Attachment with Energy Filter

Author(s):  
L. F. Barden ◽  
J. Craig Gray

The advantages of scanning electron diffraction with electron energy filtering over conventional electron diffraction have been fairly widely described, and, more recently, the use of such systems in conjunction with transmission electron microscopes has been reported. By means of scanning diffraction, the electron intensities in a diffraction pattern may be measured and plotted directly on an XY recorder without the inaccuracy and inconvenience of the normal photographic-densitometric process; and the use of an energy filter to remove electrons that have suffered an energy loss allows direct measurement of the diffracted intensities of the elastically-scattered electrons. In this paper, we describe a Scanning Electron Diffraction Attachment (SEDA) with electrostatic energy filter that has been constructed for use with the AEI EM6 and EM8 series of electron microscopes.

Author(s):  
J W Steeds

That the techniques of convergent beam electron diffraction (CBED) are now widely practised is evident, both from the way in which they feature in the sale of new transmission electron microscopes (TEMs) and from the frequency with which the results appear in the literature: new phases of high temperature superconductors is a case in point. The arrival of a new generation of TEMs operating with coherent sources at 200-300kV opens up a number of new possibilities.First, there is the possibility of quantitative work of very high accuracy. The small probe will essentially eliminate thickness or orientation averaging and this, together with efficient energy filtering by a doubly-dispersive electron energy loss spectrometer, will yield results of unsurpassed quality. The Bloch wave formulation of electron diffraction has proved itself an effective and efficient method of interpreting the data. The treatment of absorption in these calculations has recently been improved with the result that <100> HOLZ polarity determinations can now be performed on III-V and II-VI semiconductors.


1999 ◽  
Vol 5 (S2) ◽  
pp. 620-621
Author(s):  
K.T. Moore ◽  
J.M. Howe

The dependence of diffraction contrast on electron energy loss is an important relationship that needs to be understood because of its potential effect on energy-filtering transmission electron microscope (EFTEM) images. Often when either a two-window jump-ratio image or a three-window elemental map is produced diffraction contrast is not totally eliminated and contributes to the intensity of the final EFTEM image. Background removal procedures often are unable to completely account for intensity changes due to dynamical effects (i.e., elastic scattering) that occur between images acquired at different energy losses, leaving artifacts in the final EFTEM image.In this study, the relationship between diffraction contrast and electron energy loss was investigated by obtaining EFTEM images of a bend contour in aluminum in 100 eV increments from 0 to 1000 eV (Fig. 1). EFTEM images were acquired a JOEL 2010F FEG TEM with a Gatan imaging filter (GIF) at a microscope magnification of 8 kX using a 1 eV/pixel dispersion, 2X binning (512 x 512) and exposure times ranging from 0.25 s for 0 eV energy loss up to 132 sec for 1000 eV energy loss.


Author(s):  
L. Reimer

Energy-filtering transmission electron microscopy can be realized by an imaging filter lens in thecolumn of a TEM, a post-column electron energy-loss spectrometer or a dedicated STEM. This offers new possibilities in analytical electron microscopy by combining the operation modes of electron-spectroscopic imaging (ESI), electron-spectroscopic diffraction (ESD) and the record of an electron energy-loss spectrum (EELS).ESI can be used in the zero-loss mode to remove all inelastically scattered electrons. Thicker amorphous and crystalline specimens can be observed without chromatic aberration and with a transmissionof 10−3 up to 80(110) and 150(200) μg/cm2 at 80(120) keV, respectively. This results in a condiserable increase of scattering, phase and Bragg contrast, especially for low Z material because the ratio of inelastic-to-elastic cross section increases as 20/Z with decreasing atomic number. In future energy-filtered high-resolution crystal-lattice images will offer us a better comparison with dynamical simulations. Plasmon loss filtering can be applied for a better separation of phases (e.g. precipitates in a matrix), which differ in their plasmon loss by about 1 eV. Owing to intersections of the energy loss spectra, different parts of a specimen can change their contrast when tuning the selected energy window. Structures containing non carbon atoms will beconsiderably increased in a bright field like contrast relative to the carboneous matrix just below the carbon K edge (structure—sensitive imaging).


Author(s):  
Nakazo Watari ◽  
Yasuaki Hotta ◽  
Yoshio Mabuchi

It is very useful if we can observe the identical cell elements within the same sections by light microscopy (LM), transmission electron microscopy (TEM) and/or scanning electron microscopy (SEM) sequentially, because, the cell fine structure can not be indicated by LM, while the color is; on the other hand, the cell fine structure can be very easily observed by EM, although its color properties may not. However, there is one problem in that LM requires thick sections of over 1 μm, while EM needs very thin sections of under 100 nm. Recently, we have developed a new method to observe the same cell elements within the same plastic sections using both light and transmission (conventional or high-voltage) electron microscopes.In this paper, we have developed two new observation methods for the identical cell elements within the same sections, both plastic-embedded and paraffin-embedded, using light microscopy, transmission electron microscopy and/or scanning electron microscopy (Fig. 1).


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