XTEM microscopy of martensitic transformations in noble gas implanted stainless steel

1990 ◽  
Vol 48 (4) ◽  
pp. 206-207
Author(s):  
E. Johnson ◽  
A. Johansen ◽  
L. Sarholt-Kristensen ◽  
E. Gerritsen ◽  
J. Politiek ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stainless Steels ◽  
Solid Phase ◽  
Noble Gas ◽  
Thick Layer ◽  
Austenitic Stainless Steels ◽  
Martensitic Transformations ◽  
Cross Sectional ◽  
Transmission Electron

Cross-sectional transmission electron microscopy (XTEM) has been used to study the microstructure of noble gas implanted austenitic stainless steels, and in particular to analyse the depth distribution of implantation induced martensite in relation to the general radiation damage distribution.Large discs of low-austenitic stainless steels have been ion implanted with noble gases to fluences in the range l.1020 - 1.1021 m-2. Samples of the implanted discs for cross-sectional transmission electron microscopy (XTEM) were made by electroplating the implanted surface with a 3 mm thick layer of nickel, cutting 3 mm discs from the interface and electropolishing the discs to perforation using a Struers TENUPOL immersion jet apparatus.In samples implanted with low fluences (1-1020 m-2) the implantation zone consists of a heavily damaged top layer containing a dense distribution of microscopic noble gas inclusions, which are visible in defocusing phase contrast. The inclusions are ∽ 3-5 nm in diameter, and the smallest inclusions contain noble gas in the solid phase.

Characterization of pulsed laser deposited MoS2 by transmission electron microscopy

1993 ◽  
Vol 8 (11) ◽  
pp. 2933-2941 ◽  
Author(s):  
S.D. Walek ◽  
M.S. Donley ◽  
J.S. Zabinski ◽  
V.J. Dyhouse
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Solid Phase ◽  
Analytical Electron Microscopy ◽  
Pulsed Laser ◽  
Cross Sectional ◽  
Aerospace Applications ◽  
Transmission Electron ◽  
Novel Method

Molybdenum disulfide is a technologically important solid phase lubricant for vacuum and aerospace applications. Pulsed laser deposition of MoS2 is a novel method for producing fully dense, stoichiometric thin films and is a promising technique for controlling the crystallographic orientation of the films. Transmission electron microscopy (TEM) of self-supporting thin films and cross-sectional TEM samples was used to study the crystallography and microstructure of pulsed laser deposited films of MoS2. Films deposited at room temperature were found to be amorphous. Films deposited at 300 °C were nanocrystalline and had the basal planes oriented predominately parallel to the substrate within the first 12–15 nm of the substrate with an abrupt upturn into a perpendicular (edge) orientation farther from the substrate. Spherically shaped particles incorporated in the films from the PLD process were found to be single crystalline, randomly oriented, and less than about 0.1 μm in diameter. A few of these particles, observed in cross section, had flattened bottoms, indicating that they were molten when they arrived at the surface of the growing film. Analytical electron microscopy (AEM) was used to study the chemistry of the films. The x-ray microanalysis results showed that the films have the stoichiometry of cleaved single crystal MoS2 standards.

Growth of Epitaxial CoSi2/Si Multilayers

1986 ◽  
Vol 77 ◽  
Author(s):  
B. D. Runt ◽  
N. Lewis ◽  
L. J. Schotalter ◽  
E. L. Hall ◽  
L. G. Turner
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Solid Phase ◽  
Multilayer Structures ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Temperature Growth ◽  
Transmission Electron

ABSTRACTEpitaxial CoSi2/Si multilayers have been grown on Si(111) substrates with up to four bilayers of suicide and Si. To our knowledge, these are the first reported epitaxial metal-semiconductor multilayer structures. The growth of these heterostructures is complicated by pinhole formation in the suicide layers and by nonuniform growth of Si over the suicide films, but these problems can be controlled through nse of proper growth techniques. CoSi2 pinhole formation has been significantly reduced by utilizing a novel solid phase epitaxy technique in which room-temperature-deposited Co/Si bilayers are annealed to 600–650δC to form the suicide layers. Islanding in the Si layers is minimized by depositing a thin (<100Å) Si layer at room temperature with subsequent high temperature growth of the remainder of the Si. Cross-sectional transmission electron microscopy studies demonstrate that these growth procedures dramatically improve the continuity and quality of the CoSi. and Si multilayers.

Non-Alloyed Ohmic Contacts to n-GaAs Using Epitaxial Ge Layers

1985 ◽  
Vol 54 ◽  
Author(s):  
T. Sawada ◽  
W. X. Chen ◽  
E. D. Marshall ◽  
K. L. Kavanagh ◽  
T. F. Kuech ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Ohmic Contacts ◽  
Solid Phase ◽  
Solid State Reactions ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Shallow Junctions

ABSTRACTAlloyed ohmic contacts (i.e. Au-Ge-Ni) to n-GaAs lead to non-planar interfaces which are unsuitable for devices with shallow junctions and small dimensions. In this study, the fabrication of non-alloyed ohmic contacts (via solid state reactions) is investigated. A layered structure involving the solid phase epitaxy of Ge using a transport medium (PdGe) is shown to produce low (1 — 5 × 10∼6Ω cm2) and reproducible values of contact resistivity. The resultant interface is shown to be abrupt by cross-sectional transmission electron microscopy.

Effects of Mn on the Precipitation Behaviors in High-Nitrogen Austenitic Stainless Steels

2011 ◽  
Vol 194-196 ◽  
pp. 32-37 ◽  
Author(s):  
Feng Shi ◽  
Yang Qi ◽  
Chun Ming Liu
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stainless Steels ◽  
Austenitic Stainless Steels ◽  
High Nitrogen ◽  
Transmission Electron ◽  
Precipitation Type ◽  
Mn Content ◽  
Scanning Electron

Precipitation behaviors of Fe-18Cr-12Mn-0.48N and Fe-18Cr-18Mn-0.43N high-nitrogen austenitic stainless steels isothermally aged at 800°C were investigated by using optical microscopy (OM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results show that precipitation both display discontinuous cellular way and the major precipitates are both M2N phases accompanied by scattered M23C6 phases at grain boundary in the experimental steels. Increment of Mn content can not change the precipitation way and precipitation type. Increment of Mn content makes M2N precipitates obviously increase and increment of Mn and C contents makes M23C6 precipitates increase.

Defect formation due to the crystallization of deep amorphous volumes formed in silicon by mega electron volt (MeV) ion implantation

2001 ◽  
Vol 16 (11) ◽  
pp. 3229-3237 ◽  
Author(s):  
A. C. Y. Liu ◽  
J. C. McCallum ◽  
J. Wong-Leung
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Elevated Temperatures ◽  
Defect Formation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Plan View ◽  
Atomic Force ◽  
Transmission Electron

Solid-phase epitaxy was examined in deep amorphous volumes formed in silicon wafers by multi-energy self-implantation through a mask. Crystallization was effected at elevated temperatures with the amorphous volume being transformed at both lateral and vertical interfaces. Sample topology was mapped using an atomic force microscope. Details of the process were clarified with both plan-view and cross-sectional transmission electron microscopy analyses. Crystallization of the amorphous volumes resulted in the incorporation of a surprisingly large number of dislocations. These arose from a variety of sources. Some of the secondary structures were identified to occur uniquely from the crystallization of volumes in this particular geometry.

Concurrent Annealing Of Vacancy-Type And Interstitial-Type Damage In Neutron Irradiated Stainless Steel

2000 ◽  
Vol 650 ◽  
Author(s):  
E. P. Simonen ◽  
D. J. Edwards ◽  
S. M. Bruemmer
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stainless Steels ◽  
Austenitic Stainless Steels ◽  
Microstructural Characterization ◽  
Size Distributions ◽  
Significant Component ◽  
Frank Loop ◽  
Transmission Electron ◽  
Model Predictions

ABSTRACTAnalysis of the effect of annealing on change in void and loop size distributions provided insights that complement microstructural characterization using transmission electron microscopy (TEM). The predictions of concurrent vacancy-type and interstitial-type damage annealing are applied to measurements in neutron-irradiated austenitic stainless steels. Irradiation at 330°C produces void and loop microstructures for which the measured annealing response is in accord with predictions. Irradiation at 275° produces only Frank loop microstructure for which the annealing response cannot be predicted from measured microstructures. The model predictions are based on an assumed vacancy source not detected using TEM. The measured loop microstructure is typically reported to be interstitial in character but this analysis suggests that a significant component of the loop population is vacancy-type damage based on defect inventory and kinetic arguments.

Microstructure of laser-irradiated, conducting Kapton polyimide

1995 ◽  
Vol 53 ◽  
pp. 502-503
Author(s):  
D. L. Callahan ◽  
Z. Ball ◽  
H. M. Phillips ◽  
R. Sauerbrey
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Surface ◽  
Cross Sectional ◽  
General Utility ◽  
Transmission Electron ◽  
Considerable Debate ◽  
Potential Applications

Ultraviolet laser-irradiation can be used to induce an insulator-to-conductor phase transition on the surface of Kapton polyimide. Such structures have potential applications as resistors or conductors for VLSI applications as well as general utility electrodes. Although the percolative nature of the phase transformation has been well-established, there has been little definitive work on the mechanism or extent of transformation. In particular, there has been considerable debate about whether or not the transition is primarily photothermal in nature, as we propose, or photochemical. In this study, cross-sectional optical microscopy and transmission electron microscopy are utilized to characterize the nature of microstructural changes associated with the laser-induced pyrolysis of polyimide.Laser-modified polyimide samples initially 12 μm thick were prepared in cross-section by standard ultramicrotomy. Resulting contraction in parallel to the film surface has led to distortions in apparent magnification. The scale bars shown are calibrated for the direction normal to the film surface only.

Ion thinning of integrated circuit transverse specimens for transmission electron microscopy

1992 ◽  
Vol 50 (2) ◽  
pp. 1426-1427
Author(s):  
F. Shaapur
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Integrated Circuit ◽  
Substrate Surface ◽  
Homogeneous Material ◽  
Material System ◽  
Ion Milling ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Motion Profile

Non-uniform ion-thinning of heterogenous material structures has constituted a fundamental difficulty in preparation of specimens for transmission electron microscopy (TEM). A variety of corrective procedures have been developed and reported for reducing or eliminating the effect. Some of these techniques are applicable to any non-homogeneous material system and others only to unidirectionalfy heterogeneous samples. Recently, a procedure of the latter type has been developed which is mainly based on a new motion profile for the specimen rotation during ion-milling. This motion profile consists of reversing partial revolutions (RPR) within a fixed sector which is centered around a direction perpendicular to the specimen heterogeneity axis. The ion-milling results obtained through this technique, as studied on a number of thin film cross-sectional TEM (XTEM) specimens, have proved to be superior to those produced via other procedures.XTEM specimens from integrated circuit (IC) devices essentially form a complex unidirectional nonhomogeneous structure. The presence of a variety of mostly lateral features at different levels along the substrate surface (consisting of conductors, semiconductors, and insulators) generally cause non-uniform results if ion-thinned conventionally.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

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