Scanning Kelvin Force and Capacitance Microscopy Applications

1998 ◽  
Vol 4 (S2) ◽  
pp. 330-331
Author(s):  
R.J. Kline ◽  
J.F. Richards ◽  
P.E. Russell
Keyword(s):  
Integrated Circuits ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Nanometer Scale ◽  
Kelvin Probe ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Small Capacitance ◽  
Force Monitoring ◽  
Work Functions

Scanning Probe Microscopy (SPM) is being developed as a possible solution to the problems inherent with analyzing the nanometer scale electronic properties of ULSI integrated circuits. Scanning Kelvin Probe Microscopy (SKPM) and Scanning Capacitance Microscopy (SCM) are both being developed to provide two dimensional dopant profiles of semiconductor devices. SKPM can also determine surface potentials, work functions, dielectric properties, and capacitance.SKPM is based on the concept of Kelvin probe oscillating capacitor work function measurements. The small capacitance area of the SKPM tip and the high resistance of the system produce difficulties in monitoring and minimizing the current in the system. SKPM solves this problem by utilizing the force monitoring capability of the SPM to minimize the Kelvin force instead of the current. An AC voltage applied to the cantilever produces a DC force and AC forces at the AC frequency and the first harmonic of the AC frequency.

EEPROM Failure Analysis Methodology : Can Programmed Charges be Measured Directly by Electrical Techniques of Scanning Probe Microscopy (SPM)?

2005 ◽  
Author(s):  
Christophe De Nardi ◽  
Romain Desplats ◽  
Philippe Perdu ◽  
Félix Beaudoin ◽  
Jean Luc Gauffier
Keyword(s):  
Scanning Probe Microscopy ◽  
Floating Gate ◽  
Scanning Probe ◽  
Kelvin Probe ◽  
Oxide Interfaces ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Force Microscopy ◽  
Analysis Methodology ◽  
Electric Force Microscopy

Abstract A method to measure “on site” programmed charges in EEPROM devices is presented. Electrical Scanning Probe Microscopy (SPM) based techniques such as Electric Force Microscopy (EFM) and Scanning Kelvin Probe Microscopy (SKPM) are used to directly probe floating gate potentials. Both preparation and probing methods are discussed. Sample preparation to access floating gate/oxide interfaces at a few nanometers distance without discharging the gate proves to be the key problem, more than the probing technique itself. Applications are demonstrated on 128 kbit EEPROMs from ST Microelectronics and 64 kbit EEPROMs from Atmel.

Algorithms for Dynamic Hardness Measurements by Scratch Testing in the Submicron and Nanometer Scale

2013 ◽  
Vol 853 ◽  
pp. 619-624
Author(s):  
Natalia Lvova ◽  
K. Kravchuk ◽  
I. Shirokov
Keyword(s):  
Contact Area ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Nanometer Scale ◽  
Geometrical Parameters ◽  
Scratch Testing ◽  
Dynamic Hardness ◽  
Probe Microscopy ◽  
Parameters Analysis

The automatic scratch geometrical parameters analysis algorithms based on the images obtained by scanning probe microscopy have been developed. We provide a description of the technique to determine the contact area and the scratch volume with and without account of the pile-ups. The developed algorithms are applied to measure the dynamic hardness by sclerometry on the submicron and nanometer scale.

scholarly journals Prospects of scanning probe microscopy for nanometer-scale lithography.

1995 ◽  
Vol 8 (4) ◽  
pp. 669-676 ◽  
Author(s):  
LARRY AKIO NAGAHARA ◽  
HIROTAKA OHNO ◽  
HIROSHI TOKUMOTO
Keyword(s):  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Nanometer Scale ◽  
Probe Microscopy

Improve the Accuracy of Scanning Kelvin Probe Microscopy by Eliminating the Cantilever Effect

2004 ◽  
Vol 838 ◽  
Author(s):  
Zhitao Yang ◽  
Michael G. Spencer
Keyword(s):  
Linear Equations ◽  
Kelvin Probe ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Potential Source ◽  
Scanning Kelvin Probe ◽  
Surface Work ◽  
Potential Sources ◽  
Work Functions ◽  
Large Capacitance

ABSTRACTScanning Kelvin probe microscopy (SKPM) is widely used to measure surface work functions and electrostatic potentials on nanoscale circuits, devices and materials. However, the accuracy of scanning Kelvin probe microscopy is reduced by a cantilever effect, which is due to a large capacitance gradient associated with the cantilever. We introduce an aperture structure to quantitatively moderate the strength of the cantilever effect. In this approach, the cantilever effect is eliminated and the true surface potential can be extracted by solving a set of linear equations. Experimental results show that this approach yields very accurate surface potentials when there is only a single potential source within the aperture. In the case of multiple potential sources, this method significantly improves accuracy as well. A mobile aperture structure mounted on a micromanipulator can make this approach more versatile.

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