Electron Microscopy of Nanodevices: In Situ and Ex Situ Characterization of Structure and Transport Properties of Carbon Nanotubes

2008 ◽  
Vol 14 (S2) ◽  
pp. 188-189
Author(s):  
JM Zuo ◽  
T Kim ◽  
Q Chen ◽  
LM Peng ◽  
EA Olson

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

2008 ◽  
Vol 14 (S2) ◽  
pp. 304-305
Author(s):  
M Ellis ◽  
T Jutarosaga ◽  
S Smith ◽  
Y Wei ◽  
S Seraphin

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008


2008 ◽  
Vol 14 (S2) ◽  
pp. 282-283 ◽  
Author(s):  
R Banerjee ◽  
PA Crozier

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008


MRS Bulletin ◽  
2008 ◽  
Vol 33 (2) ◽  
pp. 115-121 ◽  
Author(s):  
James M. Howe ◽  
Hirotaro Mori ◽  
Zhong Lin Wang

AbstractThis article introduces the use of in situ high-resolution transmission electron microscopy (HRTEM) techniques for the study and development of nanomaterials and their properties. Specifically, it shows how in situ HRTEM (and TEM) can be used to understand diverse phenomena at the nanoscale, such as the behavior of alloy phase formation in isolated nanometer-sized particles, the mechanical and transport properties of carbon nanotubes and nanowires, and the dynamic behavior of interphase boundaries at the atomic level. Current limitations and future potential advances in in situ HRTEM of nanomaterials are also discussed.


Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.


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