scholarly journals Discussion of Electron Induced Atomic Number Contrast

2014 ◽  
Vol 20 (S3) ◽  
pp. 22-23 ◽  
Author(s):  
Lucille A. Giannuzzi
2008 ◽  
Vol 24 (6) ◽  
pp. 660-666 ◽  
Author(s):  
S. D. Findlay ◽  
D. O. Klenov ◽  
S. Stemmer ◽  
L. J. Allen

Author(s):  
P. S. D. Lin

When the angle θ between the incident electron and the normal to a surface changes, the yield of secondary electrons Y varies approximately as secθ. The topographic contrast thus produced renders secondary electrons useful for surface studies. On the other hand, as the atomic number Z increases, the backscattering coefficient η increases more rapidly than Y. Therefore, backscattered electrons should be collected as signal when atomic number contrast is desired. Figs. 1 and 2 exemplify the increase of atomic number contrast as one switches from secondary to backscattered electron mode.Backscattering is not a localized process, since both single and plural/ multiple scattering are involved. In Everhart's model, incident electrons are retarded by the inelastic scattering and scattered backwards by large angle Rutherford scattering.


2014 ◽  
Vol 20 (S3) ◽  
pp. 136-137
Author(s):  
Aniruddha Dutta ◽  
Helge Heinrich

2005 ◽  
Vol 16 (9) ◽  
pp. 1433-1439 ◽  
Author(s):  
M A Wood ◽  
D O Meredith ◽  
G Rh Owen ◽  
R G Richards ◽  
M O Riehle

2014 ◽  
Vol 77 (12) ◽  
pp. 1044-1051 ◽  
Author(s):  
Alan Boyde ◽  
Fergus A. Mccorkell ◽  
Graham K. Taylor ◽  
Richard J. Bomphrey ◽  
Michael Doube

2003 ◽  
Vol 11 (2) ◽  
pp. 36-38 ◽  
Author(s):  
Xiaodong Tao ◽  
Alwyn Eades

SEM users are familiar with two forms of contrast in SEM images: topographic contrast and atomic number contrast. We can now add a third form of contrast. Contrast can arise due to the different orientation of grains in the sample. However, in normal operation this con trast is very weak, since in the SEM the beam includes a range of incident angles. This has the effect of averaging out diffraction contrast from the different orientations of the grains. This contrast is generally much stronger when the trast is very weak, since in the SEM the beam includes a range of incident angles. This has the effect of averaging out diffraction contrast from the different orientations of the grains. This contrast is generally much stronger when the incident beam is an ion beam rather than an electron beam — contrast between the grains is strong in ion-beam images but not in normal SEM images.


1998 ◽  
Vol 13 (8) ◽  
pp. 2100-2104 ◽  
Author(s):  
Junyong Kang ◽  
Tomoya Ogawa

Precipitates in GaN epilayers grown on sapphire substrates were investigated by atomic number contrast (ANC), wavelength-dispersive x-ray spectrometry (WDS), energy-dispersive spectrometry (EDS), and cathodoluminescence (CL) techniques. The results showed that the precipitates are mainly composed of gallium and oxygen elements and distribute more sparsely and inhomogeneously in directions in the sample grown on substrate nitridated for a longer period. Yellow luminescence intensity was imaged to be stronger in the precipitates. The results suggest that the precipitates are formed on dislocations and grain boundaries by substituting oxygen onto the nitrogen site, and result in the formations of deep levels nearby.


1993 ◽  
Vol 67 (2) ◽  
pp. 131-136 ◽  
Author(s):  
J. C. Walmsley ◽  
A. Ward ◽  
R. Scowen ◽  
A. J. McGibbon ◽  
J. H. Paterson

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