Probe Optimization studies For High current Focused Ion Beam Instruments

2015 ◽  
Vol 21 (S3) ◽  
pp. 1841-1842
Author(s):  
Srinivas Subramaniam ◽  
John Richards ◽  
Kevin Johnson
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
High Current ◽  
Probe Optimization

Silver-on-Silver versus Tin-on-Silver Electrical Connectors for High Current and High Vibration Applications

2005 ◽  
Author(s):  
Prabjit Singh ◽  
Larry Palmer ◽  
James Demarest ◽  
Larry Fischer ◽  
George Hutt ◽  
...  
Keyword(s):  
Silica Particle ◽  
Focused Ion Beam ◽  
Degradation Mechanism ◽  
Ion Beam ◽  
Electrical Performance ◽  
Silver Coating ◽  
High Current ◽  
Tin Plating ◽  
Silver Silver ◽  
Hydrocarbon Oil

Abstract Contrary to known art, we have discovered that lubricated tin-silver connectors have better electrical performance and are more reliable than lubricated silver-silver connectors under high-current and high-vibration conditions. The antifretting lubricant, that enhances the performance and reliability of the tin-silver connectors, is a grease consisting of a hydrocarbon oil in a nano-sized silica-particle base. Focused ion beam and scanning electron microscopy were used to understand the contact degradation mechanism. The superior electrical performance and reliability of the lubricated tin-silver connectors is due to a mechanism that replaces the tin plating from the contact surface with a coating of silver. The removal of the tin plating may be due to wear and the replacement by the silver coating may be due to an electrochemical displacement reaction.

Focused Ion Beam Induced Deposition in the High Current Density Region

1991 ◽  
Vol 30 (Part 1, No. 11B) ◽  
pp. 3233-3237 ◽  
Author(s):  
Yoshio Takahashi ◽  
Yuuichi Madokoro ◽  
Tohru Ishitani
Keyword(s):  
Current Density ◽  
Focused Ion Beam ◽  
High Current Density ◽  
Ion Beam ◽  
High Current ◽  
Density Region

Nanosurgery of biological specimens using chemically enhanced focused ion-beam etching

1994 ◽  
Vol 52 ◽  
pp. 366-367
Author(s):  
J. M. Mackenzie ◽  
D. P. Griffis ◽  
P. E. Russell
Keyword(s):  
Rat Liver ◽  
Large Volume ◽  
Biological Material ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Collateral Damage ◽  
High Current ◽  
Biological Structure ◽  
Ion Beam Etching ◽  
Practical Utility

Many biological events occur at a small number of specific sites within a very large volume. It has recently been shown that focused ion beam (FIB) technology is useful for exposing biological structures for examination. In addition, it has been shown that biological material can be removed using FIB without detectable collateral damage beyond 100Å in fixed, dehydrated, critically point dried tissue.The next step in determining the practical utility of FIB for removal of material from a representative tissue block is to demonstrate that relevant biological structure can be exposed at a selected site. A cross sectioning technique, commonly used for analysis of semiconductor devices, was employed to demonstrate this capability on a block of rat liver prepared as above for SEM. A contiguous-series of successively deeper rectangles are cut into the material using a relatively large, high current beam (0.18μm diameter, 1nA), removing a wedge of material and leaving a large exposed face perpendicular to the surface. The exposed face can then be examined by tilting the sample and viewing with either the FIB or by SEM.

Ion beam synthesis of CoSi2 – microstructures by means of a high current focused ion beam

1996 ◽  
pp. 933-936 ◽  
Author(s):  
L. Bischoff ◽  
J. Teichert ◽  
E. Hesse ◽  
D. Panknin ◽  
W. Skorupa
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
High Current ◽  
Ion Beam Synthesis

Focused ion beam system with high current density

1991 ◽  
Vol 13 (1-4) ◽  
pp. 367-370 ◽  
Author(s):  
L. Bischoff ◽  
E. Hesse ◽  
D. Janssen ◽  
F.K. Naehring ◽  
F. Nötzold ◽  
...  
Keyword(s):  
Current Density ◽  
Focused Ion Beam ◽  
High Current Density ◽  
Ion Beam ◽  
High Current ◽  
Beam System

A Comprehensive Approach Towards Optimizing the Xenon Plasma Focused Ion Beam Instrument for Semiconductor Failure Analysis Applications

2017 ◽  
Vol 23 (4) ◽  
pp. 769-781 ◽  
Author(s):  
Srinivas Subramaniam ◽  
Jennifer Huening ◽  
John Richards ◽  
Kevin Johnson
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
New Technology ◽  
Focused Ion Beams ◽  
Specimen Preparation ◽  
High Current ◽  
Operational Characteristics ◽  
Future Challenges ◽  
Beam Instrument

AbstractThe xenon plasma focused ion beam instrument (PFIB), holds significant promise in expanding the applications of focused ion beams in new technology thrust areas. In this paper, we have explored the operational characteristics of a Tescan FERA3 XMH PFIB instrument with the aim of meeting current and future challenges in the semiconductor industry. A two part approach, with the first part aimed at optimizing the ion column and the second optimizing specimen preparation, has been undertaken. Detailed studies characterizing the ion column, optimizing for high-current/high mill rate activities, have been described to support a better understanding of the PFIB. In addition, a novel single-crystal sacrificial mask method has been developed and implemented for use in the PFIB. Using this combined approach, we have achieved high-quality images with minimal artifacts, while retaining the shorter throughput times of the PFIB. Although the work presented in this paper has been performed on a specific instrument, the authors hope that these studies will provide general insight to direct further improvement of PFIB design and applications.

De-Tethering of Metallic and Polymeric MEMS/NEMS Parts for the Direct Pick-and-Place Assembly of 3D Microsystem

2006 ◽  
Author(s):  
Karthik S. Colinjivadi ◽  
Yonghao Cui ◽  
Matthew Ellis ◽  
J.-B. Lee ◽  
George Skidmore
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Effective Means ◽  
Current Injection ◽  
Metallic Nickel ◽  
High Current ◽  
Feature Size ◽  
Pick And Place ◽  
3D Assembly ◽  
Polymer Metal

We report our study on several de-tethering methods for various metallic and polymeric MEMS and NEMS parts including thick (30~100μm) metallic (nickel and its alloys) MEMS parts, sub-micron (350 nm) feature size 1 μm thick metallic NEMS parts, and thick polymer/metal bi-layer (polymer ~50μm, metal ~2μm) MEMS parts. The conventional stress-based de-tethering used in silicon would not be effective for all of these three types of devices. High current injection through narrow tethers was found to be effective and reproducible means of de-tethering thick metallic MEMS parts. But such a method could not be applied for metallic NEMS and polymer/metal bi-layer MEMS parts, as large areas near tethers were burned even with significantly reduced amount of currents. In order to de-tether these NEMS and polymer/metal bi-layer devices, we performed the milling of tethers using a focused ion beam. Very low current (20 pA) ion beam was found to be very effective means of de-tethering the metallic NEMS parts. Relatively larger current (0.3 nA) was found to be good for the polymer/metal bi-layer parts. We demonstrated 3D assembly and/or complete packaging of some of the de-tethered MEMS parts.

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