A Comprehensive Approach Towards Optimizing the Xenon Plasma Focused Ion Beam Instrument for Semiconductor Failure Analysis Applications

2017 ◽  
Vol 23 (4) ◽  
pp. 769-781 ◽  
Author(s):  
Srinivas Subramaniam ◽  
Jennifer Huening ◽  
John Richards ◽  
Kevin Johnson
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
New Technology ◽  
Focused Ion Beams ◽  
Specimen Preparation ◽  
High Current ◽  
Operational Characteristics ◽  
Future Challenges ◽  
Beam Instrument

AbstractThe xenon plasma focused ion beam instrument (PFIB), holds significant promise in expanding the applications of focused ion beams in new technology thrust areas. In this paper, we have explored the operational characteristics of a Tescan FERA3 XMH PFIB instrument with the aim of meeting current and future challenges in the semiconductor industry. A two part approach, with the first part aimed at optimizing the ion column and the second optimizing specimen preparation, has been undertaken. Detailed studies characterizing the ion column, optimizing for high-current/high mill rate activities, have been described to support a better understanding of the PFIB. In addition, a novel single-crystal sacrificial mask method has been developed and implemented for use in the PFIB. Using this combined approach, we have achieved high-quality images with minimal artifacts, while retaining the shorter throughput times of the PFIB. Although the work presented in this paper has been performed on a specific instrument, the authors hope that these studies will provide general insight to direct further improvement of PFIB design and applications.

FIB Techniques for Analysis of Metallurgical Specimens

2000 ◽  
Vol 6 (S2) ◽  
pp. 524-525 ◽  
Author(s):  
Michael W. Phaneuf ◽  
Jian Li
Keyword(s):  
Focused Ion Beam ◽  
Materials Science ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Zirconium Alloys ◽  
Chemical Information ◽  
Specimen Preparation ◽  
Orientation Contrast ◽  
Imaging Tool ◽  
Zinc Coatings

Focused ion beam (FIB) microscopes, the use of which is well established in the semiconductor industry, are rapidly gaining attention in the field of materials science, both as a tool for producing site specific, parallel sided TEM specimens and as a stand alone specimen preparation and imaging tool.Both FIB secondary ion images (FIB SII) and FIB secondary electron images (FIB SEI) contain novel crystallographic and chemical information. The ability to see “orientation contrast” in FIB SEI and to a lesser extent SII is well known for cubic materials and more recently stress-free FIB sectioning combined with FIB imaging have been shown to reveal evidence of plastic deformation in metallic specimens. Particularly in hexagonal metals, FIB orientation contrast is sometimes reduced or eliminated by the FIB sectioning process. We have successfully employed FIB gas assisted etching during FIB sectioning using XeF2 for zirconium alloys and Cl2 for zinc coatings on steels to retain orientation contrast during subsequent imaging.

Focused Ion Beam Sample Preparation of Non-Semiconductor Materials

1997 ◽  
Vol 480 ◽  
Author(s):  
M. W. Phaneuf ◽  
N. Rowlands ◽  
G. J. C. Carpenter ◽  
G. Sundaram
Keyword(s):  
Cross Sections ◽  
Automobile Industry ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Semiconductor Materials ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Cross Sectional ◽  
Galvannealed Steel

AbstractFocused Ion Beam (FIB) systems have been steadily gaining acceptance as specimen preparation tools in the semiconductor industry. This is largely due to the fact that such instruments are relatively commonplace as failure analysis tools in semiconductor houses, and are commonly used in the preparation of cross-sections for imaging under the ion beam or using an electron beam in an SEM. Additionally, the ease with which cross-sectional TEM specimens of semiconductor devices can be prepared using FIB systems has been well demonstrated. However, this technology is largely unknown outside the semiconductor industry. Relatively few references exist in the literature on the preparation of cross-sectional TEM specimens of non-semiconductor materials by FIB. This paper discusses a specific use of FIB technology in the preparation of cross-sectional TEM specimens of non-semiconductor samples that are difficult to prepare by conventional means. One example of such materials is commercial galvannealed steel sheet that is used to form corrosion resistant auto-bodies for the automobile industry. Cross-sectional TEM specimens of this material have proved difficult and time-intensive to prepare by standard polishing and ion milling techniques due to galvanneal's inherent flaking and powdering difficulties, as well as the different sputtering rates of the various Fe-Zn intermetallic phases present in the galvannealed coatings. TEM results from cross-sectional samples of commercial galvannealed steel coatings prepared by conventional ion milling and FIB techniques are compared to assess image quality, the size of the electron-transparent thin regions that can be readily prepared and the quality of samples produced by both techniques. Specimen preparation times for both techniques are reported.

TEM Sample Preparation for the Semiconductor Industry — Part 3

1996 ◽  
Vol 4 (6) ◽  
pp. 24-25
Author(s):  
John F. Walker
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Focused Ion Beams ◽  
Accurate Identification ◽  
Tem Analysis ◽  
Site Specific ◽  
Transmission Electron

Part 1 of this series described how focused ion beam (FIB) microsurgery is used to successfully cross-section and prepare materialspecific samples for SEM and TEM analysis. In Part 2, we detailed how FIB is also the tool of choice to prepare site-specific samples, particularly for transmission electron microscopy (TEM) analysis. In this final article of this series, we describe actual sample preparation, cutting a selected area la size and mounting it on a grid for FIB preparation. Focused ion beams are very useful in preparing TEM specimens that have unique characteristics. In particular, the ability of such systems to image submicron features within a structure has allowed accurate identification of the precise place to make a membrane.

Narrow-Beam Argon Ion Milling of Ex Situ Lift-Out FIB Specimens Mounted on Various Carbon-Supported Grids

2018 ◽  
Author(s):  
M. J. Campin ◽  
C. S. Bonifacio ◽  
P. Nowakowski ◽  
P. E. Fischione ◽  
L. A. Giannuzzi
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Carbon Support ◽  
Ex Situ ◽  
Specimen Preparation ◽  
Narrow Beam ◽  
Ion Milling ◽  
Preparation Methods ◽  
Argon Ion

Abstract The semiconductor industry recently has been investigating new specimen preparation methods that can improve throughput while maintaining quality. The result has been a combination of focused ion beam (FIB) preparation and ex situ lift-out (EXLO) techniques. Unfortunately, the carbon support on the EXLO grid presents problems if the lamella needs to be thinned once it is on the grid. In this paper, we show how low-energy (< 1 keV), narrow-beam (< 1 μm diameter) Ar ion milling can be used to thin specimens and remove gallium from EXLO FIB specimens mounted on various support grids.

Recent Advances in Broad Ion Beam Based Techniques/Instrumentation for SEM Specimen Preparation of Semiconductors

1999 ◽  
Author(s):  
R. Alani ◽  
R. J. Mitro ◽  
W. Hauffe
Keyword(s):  
Cross Sections ◽  
Chemical Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Inert Gas ◽  
Specimen Preparation ◽  
Ion Beam Etching ◽  
Wet Chemical ◽  
Wet Chemical Etching

Abstract The semiconductor industry routinely prepares crosssectional SEM specimens using several traditional techniques. Included in these are cleaving, mechanical polishing, wet chemical etching and focused ion beam (FIB) milling. This presentation deals with a new alternate method for preparation of SEM semiconductor specimens based upon a dedicated broad ion beam instrument. Offered initially as an alternative to wet chemical etching, the instrument was designed to etch and coat SEM and metallographic specimens in one vacuum chamber using inert gas (Ar) ion beams. The system has recently undergone further enhancement by introducing iodine Reactive Ion Beam Etching (RIBE) producing much improved etching/cleaning capabilities compared with inert gas ion beam etching. Further results indicate Ar broad ion beam etching can offer a rapid, simple, more affordable alternative (to FIB machines) for precision cross sections and for “slope cutting,” a technique producing large cross-sections within a short time frame. The overall effectiveness of this system for iodine RIBE etching, for precision cross sectioning and “slope cutting” will be shown for a number of traditional and advanced semiconductor devices.

Transmission Electron Microscope Specimen Preparation of Metal Matrix Composites Using the Focused Ion Beam Miller

1999 ◽  
Vol 5 (S2) ◽  
pp. 892-893
Author(s):  
J.M. Cairney ◽  
R.D. Smith ◽  
P.R. Munroe
Keyword(s):  
Metal Matrix Composites ◽  
Metal Matrix ◽  
Focused Ion Beam ◽  
Materials Science ◽  
Volume Fraction ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Specimen Preparation ◽  
Matrix Composites ◽  
Thin Foils

The focused ion beam (FIB) miller has been widely accepted as a powerful tool in the semiconductor industry. However, it is now finding applications in more general materials science applications. The high resolution, energetic gallium ion beam can rapidly and precisely section materials to reveal their internal structure; one particularly valuable application being the preparation of thin foils for TEM examination, especially from heterogenous materials.To date, TEM sample preparation using FIBs has concentrated on semiconductor cross-sections [1], powders [2], and surface treated materials, e.g. galvanized steels [3]. However, thin foils of grossly heterogeneous materials, such as metal-matrix composites, are also difficult to prepare using conventional methods and are therefore well suited to sectioning using the FIB. In this study, thin foils were prepared from two composite materials: a 7075 aluminium alloy containing a 20% volume fraction of SiC particles and a FeAl alloy containing a 60% volume fraction of WC particles.

Low Energy Ar Ion Milling of FIB TEM Specimens from 14 nm and Future FinFET Technologies

2018 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Effect Transistor ◽  
20 Nm ◽  
Argon Ion

Abstract Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high-resolution TEM (HRTEM) analysis may be limited due to the resulting FIB-induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB-induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high-quality and electron-transparent TEM specimens of less than 20 nm are obtained.

Focused Ion Beam Analysis of Low-K Dielectrics

2000 ◽  
Author(s):  
H. J. Bender ◽  
R. A. Donaton
Keyword(s):  
Electron Microscope ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Step ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Beam Analysis ◽  
Low K ◽  
Scanning Electron

Abstract The characteristics of an organic low-k dielectric during investigation by focused ion beam (FIB) are discussed for the different FIB application modes: cross-section imaging, specimen preparation for transmission electron microscopy, and via milling for device modification. It is shown that the material is more stable under the ion beam than under the electron beam in the scanning electron microscope (SEM) or in the transmission electron microscope (TEM). The milling of the material by H2O vapor assistance is strongly enhanced. Also by applying XeF2 etching an enhanced milling rate can be obtained so that both the polymer layer and the intermediate oxides can be etched in a single step.

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

1997 ◽  
Author(s):  
K. Doong ◽  
J.-M. Fu ◽  
Y.-C. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

A Methodology to Reduce Ion Beam Induced Damage in TEM Specimens Prepared by FIB

2002 ◽  
Author(s):  
Chin Kai Liu ◽  
Chi Jen. Chen ◽  
Jeh Yan.Chiou ◽  
David Su
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Sensitive Issue ◽  
Transmission Electron

Abstract Focused ion beam (FIB) has become a useful tool in the Integrated Circuit (IC) industry, It is playing an important role in Failure Analysis (FA), circuit repair and Transmission Electron Microscopy (TEM) specimen preparation. In particular, preparation of TEM samples using FIB has become popular within the last ten years [1]; the progress in this field is well documented. Given the usefulness of FIB, “Artifact” however is a very sensitive issue in TEM inspections. The ability to identify those artifacts in TEM analysis is an important as to understanding the significance of pictures In this paper, we will describe how to measure the damages introduced by FIB sample preparation and introduce a better way to prevent such kind of artifacts.

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