scholarly journals In Situ TEM Etching of Gold Nanocrystals: Elucidating the Shape Transformation Mechanisms and Chemistry of the Graphene Liquid Cell

2019 ◽  
Vol 25 (S2) ◽  
pp. 1412-1413
Author(s):  
Matthew R. Hauwiller ◽  
Justin Ondry ◽  
A. Paul Alivisatos
2016 ◽  
Vol 22 (S3) ◽  
pp. 1364-1365
Author(s):  
Jun Young Cheong ◽  
Joon Ha Chang ◽  
Jeong Yong Lee ◽  
Il-Doo Kim

2016 ◽  
Vol 22 (S3) ◽  
pp. 1362-1363 ◽  
Author(s):  
Joon Ha Chang ◽  
Jun Young Cheong ◽  
Il-Doo Kim ◽  
Jeong Yong Lee

2009 ◽  
Vol 15 (S2) ◽  
pp. 704-705
Author(s):  
M Hartshorne ◽  
E Toby ◽  
P Uranga ◽  
M Schmidt ◽  
P Novotny ◽  
...  

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009


Nanoscale ◽  
2019 ◽  
Vol 11 (21) ◽  
pp. 10486-10492 ◽  
Author(s):  
Fu-Chun Chen ◽  
Jui-Yuan Chen ◽  
Ya-Hsuan Lin ◽  
Ming-Yu Kuo ◽  
Yung-Jung Hsu ◽  
...  

The formation of different shapes Au–Cu2O core–shell nanoparticles was investigated by in situ liquid cell transmission electron microscopy (LCTEM).


Nano Letters ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 7222-7229 ◽  
Author(s):  
Andreas Hutzler ◽  
Tilo Schmutzler ◽  
Michael P. M. Jank ◽  
Robert Branscheid ◽  
Tobias Unruh ◽  
...  

2017 ◽  
Vol 23 (S1) ◽  
pp. 876-877
Author(s):  
Jordan Key ◽  
Shixiang Zhu ◽  
Christopher M. Rouleau ◽  
Raymond R. Unocic ◽  
Yao Xie ◽  
...  

Author(s):  
Charles W. Allen

Irradiation effects studies employing TEMs as analytical tools have been conducted for almost as many years as materials people have done TEM, motivated largely by materials needs for nuclear reactor development. Such studies have focussed on the behavior both of nuclear fuels and of materials for other reactor components which are subjected to radiation-induced degradation. Especially in the 1950s and 60s, post-irradiation TEM analysis may have been coupled to in situ (in reactor or in pile) experiments (e.g., irradiation-induced creep experiments of austenitic stainless steels). Although necessary from a technological point of view, such experiments are difficult to instrument (measure strain dynamically, e.g.) and control (temperature, e.g.) and require months or even years to perform in a nuclear reactor or in a spallation neutron source. Consequently, methods were sought for simulation of neutroninduced radiation damage of materials, the simulations employing other forms of radiation; in the case of metals and alloys, high energy electrons and high energy ions.


Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.


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