Analysis of Thin Film Specimens Using ToF-SIMS Wedge Protocol, A Comparison with Depth Profiling

Abstract Ni(5 at.%Pt ) films were silicided at a temperature below 400 °C and at 550 °C. The two silicidation temperatures had produced different responses to the subsequent metal etch. Catastrophic removal of the silicide was seen with the low silicidation temperature, while the desired etch selectivity was achieved with the high silicidation temperature. The surface microstructures developed were characterized with TEM and Auger depth profiling. The data correlate with both silicidation temperatures and ultimately the difference in the response to the metal etch. With the high silicidation temperature, there existed a thin Si-oxide film that was close to the surface and embedded with particles which contain metals. This thin film is expected to contribute significantly to the desired etch selectivity. The formation of this layer is interpreted thermodynamically.

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Atomic emission stratigraphy by laser-induced plasma spectroscopy: Quantitative depth profiling of metal thin film systems

Applied Surface Science ◽

10.1016/j.apsusc.2014.01.125 ◽

2014 ◽

Vol 302 ◽

pp. 189-193 ◽

Cited By ~ 16

Author(s):

Tristan O. Nagy ◽

Ulrich Pacher ◽

Hannes Pöhl ◽

Wolfgang Kautek

Keyword(s):

Thin Film ◽

Depth Profiling ◽

Atomic Emission ◽

Plasma Spectroscopy ◽

Laser Induced Plasma ◽

Metal Thin Film

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Absolute depth profiling of thin film systems by low energy secondary neutral mass spectrometry

Thin Solid Films ◽

10.1016/0040-6090(89)90880-8 ◽

1989 ◽

Vol 174 ◽

pp. 133-137 ◽

Cited By ~ 5

Author(s):

A. Wucher ◽

H. Oechsner ◽

F. Novak

Keyword(s):

Thin Film ◽

Mass Spectrometry ◽

Depth Profiling ◽

Low Energy

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Depth Profiling of Organic Light-Emitting Diodes by ToF-SIMS Coupled with Wavelet–Principal Component Analysis

ACS Applied Polymer Materials ◽

10.1021/acsapm.9b00292 ◽

2019 ◽

Vol 1 (7) ◽

pp. 1821-1828 ◽

Cited By ~ 1

Author(s):

Céline Noël ◽

Nunzio Tuccitto ◽

Yan Busby ◽

Manuel Auer-Berger ◽

Antonino Licciardello ◽

...

Keyword(s):

Principal Component Analysis ◽

Light Emitting Diodes ◽

Depth Profiling ◽

Principal Component ◽

Component Analysis ◽

Organic Light Emitting Diodes ◽

Light Emitting ◽

Tof Sims ◽

Organic Light

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Thermally annealed iron thin film on an alumina barrier layer by ToF-SIMS

Surface Science Spectra ◽

10.1116/1.4931977 ◽

2015 ◽

Vol 22 (2) ◽

pp. 22-28 ◽

Cited By ~ 1

Author(s):

Supriya S. Kanyal ◽

David S. Jensen ◽

Zihua Zhu ◽

Matthew R. Linford

Keyword(s):

Thin Film ◽

Barrier Layer ◽

Tof Sims

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TOF-SIMS depth profiling of SIMON

Applied Surface Science ◽

10.1016/s0169-4332(02)00697-9 ◽

2003 ◽

Vol 203-204 ◽

pp. 441-444

Author(s):

Ge Xin ◽

Gui Dong ◽

Chen Xu ◽

Cha Liangzhen ◽

O. Brox ◽

...

Keyword(s):

Depth Profiling ◽

Tof Sims ◽

Sims Depth Profiling

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Changes of UV Optical Properties of Plasma Damaged Low-k Dielectrics for Sidewall Damage Scatterometry

MRS Proceedings ◽

10.1557/proc-1079-n07-04 ◽

2008 ◽

Vol 1079 ◽

Cited By ~ 4

Author(s):

Premysl Marsik ◽

Adam Urbanowicz ◽

Klara Vinokur ◽

Yoel Cohen ◽

Mikhail R Baklanov

Keyword(s):

Thin Film ◽

Optical Properties ◽

Optical Model ◽

Concentration Profiles ◽

Atomic Concentration ◽

Plasma Damage ◽

Tof Sims ◽

Plasma Treatments ◽

Water Based ◽

Low K

ABSTRACTPorous low-k dielectrics were studied to determine the changes of optical properties after various plasma treatments for development of scatterometry technique for evaluation of the trench/via sidewall plasma damage. The SiCOH porogen based low-k films were prepared by PE-CVD. The deposited and UV-cured low-k films have been damaged by striping O2Cl2, O2, NH3 and H2N2 based plasmas and CF4/CH2F2/Ar etching plasma. Blanket wafers were studied in this work for the simplicity of thin film optical model. The optical properties of the damaged low-k dielectrics are evaluated the using various angle spectroscopic ellipsometry in range from 2 to 9 eV. Multilayer optical model is applied to fit the measured quantities and the validity is supported by other techniques. The atomic concentration profiles of Si, C, O and H were stated by TOF-SIMS and changes in overall chemical composition were derived from FTIR. Toluene and water based ellipsometric porosimetry is involved to examine the porosity, pore interconnectivity and internal hydrophilicity.

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