scholarly journals Elemental Characterization of Al Nanoparticles Buried under a Cu Thin Film: TOF-SIMS vs STEM/EDX

2020 ◽  
Vol 92 (18) ◽  
pp. 12518-12527 ◽  
Author(s):  
Agnieszka Priebe ◽  
Jean-Paul Barnes ◽  
Thomas Edward James Edwards ◽  
Emese Huszár ◽  
Laszlo Pethö ◽  
...  
Keyword(s):  
Thin Film ◽  
Al Nanoparticles ◽  
Tof Sims ◽  
Cu Thin Film ◽  
Elemental Characterization

scholarly journals Potential of gas-assisted time-of-flight secondary ion mass spectrometry for improving the elemental characterization of complex metal-based systems

2020 ◽  
Vol 35 (12) ◽  
pp. 2997-3006
Author(s):  
Agnieszka Priebe ◽  
Tianle Xie ◽  
Laszlo Pethö ◽  
Johann Michler
Keyword(s):  
Mass Spectrometry ◽  
Chemical Analysis ◽  
Secondary Ion Mass Spectrometry ◽  
High Sensitivity ◽  
Elemental Distribution ◽  
Tof Sims ◽  
Molecular Information ◽  
Secondary Ion ◽  
Elemental Characterization

Enhancing the spatial resolution of TOF-SIMS, which provides 3D elemental distribution in combination with high sensitivity and molecular information, is currently one of the hottest topics in the field of chemical analysis at the nanoscale.

Chemical, microstructural, and internal friction characterization of Al/Cu thin‐film reactions

1991 ◽  
Vol 70 (4) ◽  
pp. 2086-2093 ◽  
Author(s):  
C. M. Su ◽  
H. G. Bohn ◽  
K.‐H. Robrock ◽  
W. Schilling
Keyword(s):  
Thin Film ◽  
Internal Friction ◽  
Cu Thin Film

Characterization of advanced ALD-based thin film barriers for organic electronics using ToF-SIMS analysis

2018 ◽  
Vol 59 ◽  
pp. 21-26 ◽  
Author(s):  
T. Terlier ◽  
T. Maindron ◽  
J.-P. Barnes ◽  
D. Léonard
Keyword(s):  
Thin Film ◽  
Organic Electronics ◽  
Tof Sims ◽  
Sims Analysis

Stress Factors and Absolute Residual Stresses in Thin Films Determined by the Combination of Curvature and sin²ψ Methods

2006 ◽  
Vol 524-525 ◽  
pp. 711-715
Author(s):  
Klaus J. Martinschitz ◽  
Ernst Eiper ◽  
Jozef Keckes
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Stress Factors ◽  
Diffraction Measurement ◽  
Experimental Stress ◽  
Rocking Curve ◽  
Absolute Residual ◽  
Cu Thin Film

A new method is presented which allows the determination of experimental stress factors in anisotropic thin films on the basis of static diffraction measurement. The method is based on the simultaneous characterization of macroscopic stress and elastic strain in thin film using substrate curvature and sin2ψ methods, respectively. The curvature of monocrystalline substrate with known mechanical properties is determined using rocking curve measurements on substrate symmetrical reflections. The experimental stress and strain values are used to calculate stress factors for the specific film as a function sample tilt angle and reflection measured. The approach represents a relatively simple recipe to determine residual stress magnitude in thin films on the absolute scale. The procedure is demonstrated on polycrystalline Cu thin film deposited on Si(100).

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

Microstructural and fractographic characterization of B4C-Al cermets tested under dynamic and static loading

1989 ◽  
Vol 47 ◽  
pp. 562-563
Author(s):  
Gyeung Ho Kim ◽  
Mehmet Sarikaya ◽  
D. L. Milius ◽  
I. A. Aksay
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Static Loading ◽  
Carbon Deposition ◽  
Full Density ◽  
Unique Combination ◽  
Strong Component ◽  
Reaction Products

Cermets are designed to optimize the mechanical properties of ceramics (hard and strong component) and metals (ductile and tough component) into one system. However, the processing of such systems is a problem in obtaining fully dense composite without deleterious reaction products. In the lightweight (2.65 g/cc) B4C-Al cermet, many of the processing problems have been circumvented. It is now possible to process fully dense B4C-Al cermet with tailored microstructures and achieve unique combination of mechanical properties (fracture strength of over 600 MPa and fracture toughness of 12 MPa-m1/2). In this paper, microstructure and fractography of B4C-Al cermets, tested under dynamic and static loading conditions, are described.The cermet is prepared by infiltration of Al at 1150°C into partially sintered B4C compact under vacuum to full density. Fracture surface replicas were prepared by using cellulose acetate and thin-film carbon deposition. Samples were observed with a Philips 3000 at 100 kV.

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