scholarly journals Fast Improvement of TEM Images with Low-Dose Electrons by Deep Learning

2021 ◽  
pp. 1-7
Author(s):  
Hiroyasu Katsuno ◽  
Yuki Kimura ◽  
Tomoya Yamazaki ◽  
Ichigaku Takigawa
Keyword(s):  
Image Processing ◽  
Total Dose ◽  
Low Dose ◽  
Imaging Technique ◽  
Short Exposure ◽  
Electron Dose ◽  
Transmission Electron ◽  
Conversion Time

Low electron dose observation is indispensable for observing various samples using a transmission electron microscope; consequently, image processing has been used to improve transmission electron microscopy (TEM) images. To apply such image processing to in situ observations, we here apply a convolutional neural network to TEM imaging. Using a dataset that includes short-exposure images and long-exposure images, we develop a pipeline for processed short-exposure images, based on end-to-end training. The quality of images acquired with a total dose of approximately $5$ $e^{-}$ per pixel becomes comparable to that of images acquired with a total dose of approximately $1{,}000$ $e^{-}$ per pixel. Because the conversion time is approximately 8 ms, in situ observation at 125 fps is possible. This imaging technique enables in situ observation of electron-beam-sensitive specimens.

Automated electron tomography: from data collection to image processing

1995 ◽  
Vol 53 ◽  
pp. 26-27
Author(s):  
Weiping Liu ◽  
Jennifer Fung ◽  
W.J. de Ruijter ◽  
Hans Chen ◽  
John W. Sedat ◽  
...  
Keyword(s):  
Image Processing ◽  
Data Collection ◽  
Structural Information ◽  
Imaging Technique ◽  
Electron Tomography ◽  
Ccd Camera ◽  
Automated Data Collection ◽  
Full Control ◽  
Transmission Electron ◽  
Amorphous Structures

Electron tomography is a technique where many projections of an object are collected from the transmission electron microscope (TEM), and are then used to reconstruct the object in its entirety, allowing internal structure to be viewed. As vital as is the 3-D structural information and with no other 3-D imaging technique to compete in its resolution range, electron tomography of amorphous structures has been exercised only sporadically over the last ten years. Its general lack of popularity can be attributed to the tediousness of the entire process starting from the data collection, image processing for reconstruction, and extending to the 3-D image analysis. We have been investing effort to automate all aspects of electron tomography. Our systems of data collection and tomographic image processing will be briefly described.To date, we have developed a second generation automated data collection system based on an SGI workstation (Fig. 1) (The previous version used a micro VAX). The computer takes full control of the microscope operations with its graphical menu driven environment. This is made possible by the direct digital recording of images using the CCD camera.

scholarly journals Automated cryo-lamella preparation for high-throughput in-situ structural biology

2019 ◽  
Author(s):  
Genevieve Buckley ◽  
Gediminas Gervinskas ◽  
Cyntia Taveneau ◽  
Hari Venugopal ◽  
James C. Whisstock ◽  
...  
Keyword(s):  
Saccharomyces Cerevisiae ◽  
Structural Biology ◽  
Focused Ion Beam ◽  
Electron Tomography ◽  
Ion Beam ◽  
Automated Method ◽  
Cellular Environment ◽  
Transmission Electron

AbstractCryo-transmission electron tomography (cryo-ET) in association with cryo-focused ion beam (cryo-FIB) milling enables structural biology studies to be performed directly within the cellular environment. Cryo-preserved cells are milled and a lamella with a thickness of 200-300 nm provides an electron transparent window suitable for cryo-ET imaging. Cryo-FIB milling is an effective method, but it is a tedious and time-consuming process, which typically results in ~10 lamellae per day. Here, we introduce an automated method to reproducibly prepare cryo-lamellae on a grid and reduce the amount of human supervision. We tested the routine on cryo-preserved Saccharomyces cerevisiae and demonstrate that this method allows an increased throughput, achieving a rate of 5 lamellae/hour without the need to supervise the FIB milling. We demonstrate that the quality of the lamellae is consistent throughout the preparation and their compatibility with cryo-ET analyses.

The role of ion-beam cleaning in the growth of strained-layer epitaxial thin transition metal films

1987 ◽  
Vol 2 (4) ◽  
pp. 446-455 ◽  
Author(s):  
Sung I. Park ◽  
A. Marshall ◽  
R. H. Hammond ◽  
T. H. Geballe ◽  
J. Talvacchio
Keyword(s):  
Tunnel Junctions ◽  
Ion Beam ◽  
Surface Damage ◽  
Metal Films ◽  
Strained Layer ◽  
Transmission Electron ◽  
Lattice Matched

Low-energy ion-beam cleaning of the substrates prior to a deposition greatly enhances the quality of ultrathin (< 100 Å) refractory superconducting (Nb, V) films. Using this technique Nb films as thin as 7 Å have been grown, from which good tunnel junctions have been fabricated. Both the native films and the tunnel junctions are sturdy and can be thermally recycled without any degradation. In-situ surface study along with transmission electron microscopy (TEM) results suggest the removal of the carbon atoms from the surface of the substrate without an apparent surface damage as the causes of the improvement. The TEM results indicate that the Nb films grow perfectly lattice matched to the sapphire substrate when the substrate is ion-beam cleaned. This strained-layer epitaxy is observed up to 40 Å, the maximum thickness investigated through TEM.

Growth of MBE-Codeposited IrSi3 on Si(111) and Si(100)

1994 ◽  
Vol 299 ◽  
Author(s):  
Gary A. Gibson ◽  
Davis A. Lange ◽  
Charles M. Falco
Keyword(s):  
Ion Beam ◽  
Silicide Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Growth Modes ◽  
Transmission Electron ◽  
Low Energy Electron

AbstractWe have used Molecular Beam Epitaxy (MBE) to successfully grow films that are predominantly IrSi3 on both Si(111) and Si(100) substrates by codeposition of Si and Ir in a 3:1 ratio. Bragg-Brentano and Seemann-Bohlin x-ray diffraction reveal that polycrystalline IrSi3 films form as low as 450 °C. This is the lowest temperature yet reported for growth of this iridium silicide phase. These x-ray diffraction techniques, along with Transmission Electron Microscope (TEM) diffraction and in situ Low Energy Electron Diffraction (LEED), show that at higher deposition temperatures codeposition can form IrSi3 films on Si(111) that consist predominantly of a single epitaxial growth orientation. Ion beam channeling and x-ray rocking curves show that the epitaxial quality of IrSi3 films deposited on Si(111) is superior to that of IrSi3 films deposited on Si(100). We also present evidence for several new epitaxial IrSi3 growth modes on Si(111) and Si(100).

Orientational and Microstructural Evolution During Epitaxial Growth of Cu on Si(001) by Sputter Deposition

1992 ◽  
Vol 280 ◽  
Author(s):  
I. Hashim ◽  
B. Park ◽  
H. A. Atwater
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
High Energy ◽  
Sputter Deposition ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron

ABSTRACTEpitaxial Cu thin films have been grown on H-terminated Si(OOl) substrates at room temperature by D.C. ion-beam sputter deposition in ultrahigh vacuum. The development of orientation and microstructure during epitaxial growth from the initial stages of Cu growth up to Cu thicknesses of few hundred nm has been investigated. Analysis by in-situ reflection high energy electron diffraction, thin film x-ray diffraction, and plan-view and cross-sectional transmission electron microscopy indicates that the films are well textured with Cu(001)∥ Si(001) and Cu[100]∥ Si[110]. Interestingly, it is found that a distribution of orientations occurs at the early stages of Cu epitaxy on Si(001) surface, and that a (001) texture emerges gradually with increasing Cu thickness. The effect of silicide formation and deposition conditions on the crystalline quality of Cu epitaxy is also discussed.

Cryo-transmission electron microscopy of Ag nanoparticles grown on an ionic liquid substrate

2010 ◽  
Vol 25 (7) ◽  
pp. 1264-1271 ◽  
Author(s):  
Dalaver H. Anjum ◽  
Rebecca M. Stiger ◽  
James J. Finley ◽  
James F. Conway
Keyword(s):  
Electron Microscopy ◽  
Ionic Liquid ◽  
Electron Tomography ◽  
Silver Nanostructures ◽  
Electron Dose ◽  
Transmission Electron ◽  
Induced Motion ◽  
Novel Method ◽  
Individual Nanoparticles

We report a novel method of growing silver nanostructures by cathodic sputtering onto an ionic liquid (IL) and our visualization by transmission cryo-electron microscopy to avoid beam-induced motion of the nanoparticles. By freezing the IL suspension and controlling electron dose, we can assess properties of particle size, morphology, crystallinity, and aggregation in situ and at high detail. We observed round silver nanoparticles with a well-defined diameter of 7.0 ± 1.5 nm that are faceted with crystalline cubic structures and ˜80% of the particles have multiply twinned faults. We also applied cryo-electron tomography to investigate the structure of the nanoparticles and to directly visualize the IL wetting around them. In addition to particles, we observed nanorods that appear to have assembled from individual nanoparticles. Reexamination of the samples after 4–5 days from initial preparation showed significant changes in morphology, and potential mechanisms for this are discussed.

The effect of carbon element on optical properties of n-doped Ge on silicon substrate

2018 ◽  
Vol 32 (20) ◽  
pp. 1850224
Author(s):  
Thi Kim Phuong Luong
Keyword(s):  
High Energy ◽  
New Approach ◽  
Transmission Electron ◽  
Active Concentration ◽  
Ge Matrix ◽  
N Doping ◽  
Dopant Atoms ◽  
Low Solubility

Highly n-doped Ge on Si has been demonstrated to be a promising candidate for the compatible light source with silicon technology. In the in-situ n-doping process of Ge epilayers, the active concentration is limited below [Formula: see text] due to low solubility of dopant element in Ge matrix. Many dopant atoms are incorporated in the interstitial sites instead of substitution sites. We present a new approach to increase the electron concentration by adding carbon elements into P-doped Ge epilayers. A gain of PL intensity has been obtained with a factor of 2. The crystalline quality of the Ge film is also investigated owing to using a reflection high-energy electron diffraction (RHEED) apparatus and high-resolution transmission electron microscopy (HR-TEM). Phosphorus dopant is incorporated into Ge epilayers from specific GaP solid source.

Ion-Beam and Electron-Beam Induced Amorphization of Berlinite (AIPO4)

1994 ◽  
Vol 373 ◽  
Author(s):  
N. Bordes ◽  
R.C. Ewing
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Low Dose ◽  
Ion Beam ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Crystalline Material ◽  
Small Areas ◽  
Transmission Electron

AbstractBerlinite (AIPO4) is isostructural with α-quartz. Like α-quartz, berlinite undergoes a pressure-induced amorphization at 15 ±3 GPa; however, upon release of the pressure, unlike α-quartz which remains amorphous, berlinite returns to the original crystalline structure of the single crystal. Berlinite was irradiated with 1.5 MeV Kr+ at temperatures ranging from 20 to 600K. The onset of amorphization was examined by monitoring the electron diffraction pattern by in situ transmission electron microscopy (TEM) at the HVEM-Tandem Facility at Argonne National Laboratory. The berlinite was easily amorphized at 20K at a relatively low dose of 4x1013 ions/cm2 or 0.05 dpa (displacements per atom). The critical amorphization dose increases with the sample temperature. These experiments also showed that the focused electron beam can locally amorphize the berlinite. After these irradiations, berlinite remained amorphous. At 500 °C, berlinite began to recrystallize: small areas of crystalline material appear in the aperiodic matrix. These results suggest that pressure-induced amorphization and ion-beam induced amorphization, in the case of berlinite, are different processes that result in two different aperiodic structural states.

scholarly journals A toolkit for the characterization of CCD cameras for transmission electron microscopy

2009 ◽  
Vol 66 (1) ◽  
pp. 97-109 ◽  
Author(s):  
M. Vulovic ◽  
B. Rieger ◽  
L. J. van Vliet ◽  
A. J. Koster ◽  
R. B. G. Ravelli
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ideal Point ◽  
Direct Access ◽  
Modulation Transfer ◽  
Ccd Cameras ◽  
Electron Dose ◽  
Fibre Optics ◽  
Transmission Electron

Charge-coupled devices (CCD) are nowadays commonly utilized in transmission electron microscopy (TEM) for applications in life sciences. Direct access to digitized images has revolutionized the use of electron microscopy, sparking developments such as automated collection of tomographic data, focal series, random conical tilt pairs and ultralarge single-particle data sets. Nevertheless, for ultrahigh-resolution work photographic plates are often still preferred. In the ideal case, the quality of the recorded image of a vitrified biological sample would solely be determined by the counting statistics of the limited electron dose the sample can withstand before beam-induced alterations dominate. Unfortunately, the image is degraded by the non-ideal point-spread function of the detector, as a result of a scintillator coupled by fibre optics to a CCD, and the addition of several inherent noise components. Different detector manufacturers provide different types of figures of merit when advertising the quality of their detector. It is hard for most laboratories to verify whether all of the anticipated specifications are met. In this report, a set of algorithms is presented to characterize on-axis slow-scan large-area CCD-based TEM detectors. These tools have been added to a publicly available image-processing toolbox forMATLAB. Three in-house CCD cameras were carefully characterized, yielding, among others, statistics for hot and bad pixels, the modulation transfer function, the conversion factor, the effective gain and the detective quantum efficiency. These statistics will aid data-collection strategy programs and provide prior information for quantitative imaging. The relative performance of the characterized detectors is discussed and a comparison is made with similar detectors that are used in the field of X-ray crystallography.

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