Phase Identification and Mapping Based on Valence Loss EELS and ELNES

2009 ◽  
Vol 17 (3) ◽  
pp. 16-19
Author(s):  
R.D. Twesten

Much of analytical TEM is based on elemental analysis of core-shell ionizations and their role in electron energy-loss spectroscopy (EELS) and energy-dispersive X-ray spectroscopy (EDS). In these techniques, integrals of the primary or secondary ionization signals (typically over many tens of eV in energy) are used to measure and map the elemental composition of probed sample areas.In contrast, present-day STEM EELS systems are able to reveal spectral details with resolution in the range 0.1-1.0 eV. This means that EELS provides access to electronic structure and response information that goes beyond the simple elemental composition information of the integrated core-loss signals.

Author(s):  
R. F. Egerton

An important parameter governing the sensitivity and accuracy of elemental analysis by electron energy-loss spectroscopy (EELS) or by X-ray emission spectroscopy is the signal/noise ratio of the characteristic signal.


2009 ◽  
Vol 19 (48) ◽  
pp. 9213 ◽  
Author(s):  
Andrew P. Grosvenor ◽  
Farshid Ramezanipour ◽  
Shahab Derakhshan ◽  
Christian Maunders ◽  
Gianluigi A. Botton ◽  
...  

2001 ◽  
Vol 693 ◽  
Author(s):  
C. J. Fall ◽  
R. Jones ◽  
P. R. Briddon ◽  
A. T. Blumenau ◽  
T. Frauenheim ◽  
...  

AbstractThe electronic structure of dislocations in GaN is controversial. Several experimental techniques such as carrier mobility studies and cathodoluminescence experiments have indicated that dislocations are charged while theoretical studies point to intrinsic states and/or point defect accumulation along the core as a source of electrical activity. Electron Energy Loss Spectroscopy (EELS) studies have the ability to probe the electronic structure of extended defects. Here we report rst principles calculations of the EELS spectrum applied to edge dislocations in GaN. It is found that the electrostatic potential at N atoms in the vicinity of the dislocation varies by the order of a volt and casts doubt on any simple interpretation of core loss spectroscopy. On the other hand, low loss spectroscopy leads directly to detailed information about any gap states. The low loss spectrum obtained by the theory is in good agreement with recent experimental work and indicates that threading dislocations in p-type GaN possess acceptor levels in the upper half of the gap.


2017 ◽  
Vol 253 ◽  
pp. 58-62
Author(s):  
Yohei Sato ◽  
Taiki Saito ◽  
Kohei Tsuchiya ◽  
Masami Terauchi ◽  
Hiroki Saito ◽  
...  

Author(s):  
R.F. Egerton

Quantitative elemental analysis by electron energy-loss spectroscopy requires values of core-loss cross section σ(β,Δ) integrated up to a scattering angle β and over an energy range Δ above the ionization threshold. Such cross sections can be calculated using atomic models [1-3], neglecting solid-state effects. They can also be determined experimentally [4,5], but only for particular values of β,Δ and incident energy E0. By representing σ(β,Δ) in terms of an integrated dipole oscillator strength f(Δ) which is independent of β and E0, we realize two advantages: (1) measurements on solids can be directly compared with one another and with theory, and (2) values of σ(β,Δ) for K, L and M edges can be derived from tabulated values of f(Δ) by use of a hand calculator or a very short computer program.


Author(s):  
D. E. Johnson ◽  
M. Isaacson

The use of electron energy loss spectroscopy (ELS) for elemental analysis of thin films holds considerable promise. This technique has definite advantages in comparison with energy dispersive X-ray spectroscopy (EDS) for two fundamental reasons. First, the detection sensitivity is independent of the fluorescence yield, since for each inner shell excitation an energy loss electron exists as opposed to only a finite probability that an excitation will result in a X-ray emitted. Second, the information carrying energy loss electrons are contained in a small solid angle about 0° scattering angle as opposed to the resulting X-rays which are emitted uniformly over 4Π steradians. This means that a large fraction of the energy loss electrons can be detected (up to ∼90%) compared to only a small fraction (∼1%) of the emitted X-rays with an EDS system.


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