scholarly journals An Innovative Method for Imaging and Chemical Analysis of Wet Samples in Scanning Electron Microscopes

2005 ◽  
Vol 13 (4) ◽  
pp. 10-15 ◽  
Author(s):  
Irit Ruach-Nir
Keyword(s):  
Biological Sciences ◽  
Electron Microscopy ◽  
High Resolution ◽  
Chemical Analysis ◽  
Sample Processing ◽  
Innovative Method ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

Electron microscopy (EM) of fully wet samples is a valuable tool for studies in the material, medical and biological sciences. In order to appreciate the natural structures of tissues or materials they should be examined in their native wet state, as opposed to a dry form that incorporates artifacts of sample processing. Viewing and analyzing wet samples at high resolution has undergone a significant improvement only recently due to the innovative WETSEMTM technology developed by QuantomiX.

Field of View and Image Distortion : A Review of Low Magnification Imaging In the Environmental and Conventional Scanning Electron Microscopes (SEM)

1997 ◽  
Vol 3 (S2) ◽  
pp. 1193-1194
Author(s):  
Brendan J. Griffin
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Field Of View ◽  
Depth Of Field ◽  
Aperture Size ◽  
Sem Image ◽  
Electron Microscopes ◽  
Working Distance ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

Most scanning electron microscopy is performed at low magnification; applications utilising the large depth of field nature of the SEM image rather than the high resolution aspect. Some environmental SEMs have a particular limitation in that the field of view is restricted by a pressure limiting aperture (PLA) at the beam entry point of the specimen chamber. With the original ElectroScan design, the E-3 model ESEM utilised a 500 urn aperture which gave a very limited field of view (∼550um diameter at a 10mm working distance [WD]). An increase of aperture size to ∼lmm provided an improved but still unsatisfactory field of view. The simplest option to increase the field of view in an ESEM was noted to be a movement of the pressure and field, limiting aperture back towards the scan coils1. This approach increased the field of view to ∼2mm, at a 10mm WD. A commercial low magnification device extended this concept and indicated the attainment of conventional fields of view.

High resolution Scanning Electron Microscopy

1989 ◽  
Vol 47 ◽  
pp. 6-7
Author(s):  
David C. Joy
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
High Resolution ◽  
High Performance ◽  
Secondary Electron ◽  
Wide Energy Range ◽  
Wide Energy ◽  
Electron Microscopes ◽  
Electron Imaging ◽  
Scanning Electron

High resolution scanning electron microscopy is still a relatively new and unfamiliar concept because in the early days of the SEM it was expected, that secondary electron imaging would be limited to a resolution of between 5 and 10nm at best. Now, however, because of improvements in instrumentation and technique based on advances in the understanding of electron beam interactions with solids current SEMs can demonstrate spatial resolutions below 1nm, rivaling those obtained by transmission instruments.High performance scanning electron microscopes always incorporate two advanced items of instrumentation. Firstly they use field emission guns (FEGs). The high brightness, low energy spread, and small source size of the FEG makes it possible to produce an electron probe of sub-nanometer size which contains sufficient current for secondary electron imaging (i.e 10-12 amps or more) and which can maintain this performance over a wide energy range (3 to 30keV). Secondly, the new high performance instruments place the specimen within a high excitation, immersion, probe forming lens.

SEM Equipment Capabilities Evaluated for Sub-Half Micron Semiconductor Applications

1997 ◽  
Author(s):  
J. Cowan ◽  
T. Taylor
Keyword(s):  
Electron Microscopy ◽  
Memory Cell ◽  
Image Resolution ◽  
Evaluation Methodology ◽  
Reasonable Cost ◽  
High Image Resolution ◽  
High Assurance ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

Abstract Evaluation of Scanning Electron Microscopes (SEMs) was initiated for the purpose of purchasing a SEM that would improve the productivity of scanning electron microscopy during the cycle of analysis and deprocessing of semiconductor devices in a failure analysis lab. In addition to the need for high image resolution at low electron acceleration voltages, an accurate motorized stage is a major evaluation factor. It is necessary for the analyst to drive directly to a known location such as a memory cell with a high assurance that the site of interest was found. There are two main areas of focus in this paper. First, our SEM evaluation methodology will be presented along with the results of our evaluation. Second, the technology associated with motorized stages will be discussed in light of our requirements for a motorized, highly accurate stage. As a byproduct of this evaluation, this paper is presented so as to push the SEM industry to offer a SEM with an accurate stage for subhalfmicron products at reasonable cost.

Series in Microscopy in Materials Science: Electron Microscopy in Heterogeneous Catalysis. P.L. Gai and E.D. Boyes. Series Editors: B. Cantor, M.J. Goringe, and J.A Eades. Institute of Physics Publishing, Bristol, England; 2003, 233 pages (Hardback). ISBN 0-7503-0809-5

2003 ◽  
Vol 9 (4) ◽  
pp. 368-368
Author(s):  
Hiroyasu Saka
Keyword(s):  
Electron Microscopy ◽  
Heterogeneous Catalysis ◽  
Materials Science ◽  
The Past ◽  
Dynamic Observation ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

This book deals with in situ dynamic observation and analysis of heterogeneous catalysis using environmental cells (EC) in transmission (TEM) and scanning electron microscopes (SEM). In general, it is based on outstanding and unique works carried out by the authors themselves over the past three decades, who pioneered this key enabling area of materials science.

Low-voltage high-resolution Scanning Electron Microscopy of semiconductors

1989 ◽  
Vol 47 ◽  
pp. 82-83
Author(s):  
S.J. Krause ◽  
G.N. Maracas ◽  
W.J. Varhue ◽  
D.C. Joy
Keyword(s):  
High Resolution ◽  
High Performance ◽  
Low Voltage ◽  
Image Recording ◽  
Surface Charging ◽  
New Information ◽  
Negative Surface ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

The advent of scanning electron microscopes (SEMs) with reliable, high performance field emission guns (FEG) has afforded many opportunities to obtain new information at low voltages not available at higher voltages in traditional SEMs equipped with tungsten hairpin or LaB6 filaments. The FEG SEMs are able to operate at low voltages with both high brightness and high resolution (HR) due to the small source size and low energy spread of the beam. Resolution of 4 nm down to 1.5 nm are routinely possible in the energy range from 1 to 5 keV along with standard image recording times of 1 to 2 minutes. The low voltage capabilities have allowed insulating materials, such as polymers, composites, and ceramics to be imaged at high resolutions at energies below the second crossover, usually around 1 to 2 keV, without experiencing image artifacts from negative surface charging normally found in uncoated insulators at higher operating voltages.

Caustic patterns combined with second and third order astigmatism in high resolution scanning electron microscopes

1990 ◽  
Vol 21 (1-2) ◽  
pp. 57-68 ◽  
Author(s):  
Koichi Kanaya ◽  
Eisaku Oho ◽  
Koichi Adachi ◽  
Yoshiaki Yamamoto ◽  
Hiroshi Doi
Keyword(s):  
High Resolution ◽  
Third Order ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

Direct Defect Imaging in the High Resolution Sem

1990 ◽  
Vol 183 ◽  
Author(s):  
David C Joy
Keyword(s):  
High Resolution ◽  
Field Emission ◽  
High Performance ◽  
Necessary Conditions ◽  
Electron Channeling ◽  
Electron Microscopes ◽  
Crystallographic Defects ◽  
Scanning Electron Microscopes ◽  
Defect Imaging ◽  
Scanning Electron

AbstractThe theory of imaging crystallographic defects in solid specimens through the use of electron channeling contrast is reviewed and the necessary conditions for observation are deduced. It is shown that current high performance field emission scanning electron microscopes can meet these requirements and produce dislocation images from suitable materials.

scholarly journals A high-resolution add-on in-lens attachment for scanning electron microscopes

Scanning ◽  
2006 ◽  
Vol 23 (3) ◽  
pp. 204-210 ◽  
Author(s):  
A. Khursheed ◽  
N. Karuppiah ◽  
S. H. Koh
Keyword(s):  
High Resolution ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron
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