scholarly journals On the Sub-Nanometer Resolution of Scanning Electron and Helium Ion Microscopes

2009 ◽  
Vol 17 (2) ◽  
pp. 6-13 ◽  
Author(s):  
András E. Vladár ◽  
Michael T. Postek ◽  
Bin Ming

All forms of microscopy are being pushed to the limit by nanotechnology. This is especially true for high-resolution scanning electron and helium ion microscopes, which are proving to be extremely useful for nanometer-scale imaging, characterization, and dimensional measurements. Excellent resolution is essential for imaging nanomaterials. Hence, there is a relentless quest to achieve better and better resolution with various electron and ion microscopes and to monitor and maintain these instruments to achieve the best possible performance levels.The ability to resolve fine details with a microscope has greatly improved over the past 20 years. The resolution achievable with the newest scanning electron microscopes (SEMs) can now be at or below 0.4 nm and for the scanning helium ion microscope (HeIM), 0.24 nm has been reported. To put this into perspective, the {111} crystal plane in silicon (Si) has 0.32 nm lattice spacing, so one cubic nanometer in the Si crystal contains only a few atoms. Therefore, an instrument must be performing at the highest level possible to resolve routinely the finest structures. Clearly, the instrument operator must also be functioning at a high level as well to achieve the best resolution and to prove that the instrument is capable of doing the work.

Author(s):  
L. C. Sawyer

Recent advances in Analytical Electxon Microscopy (AEM) have changed the methods by which microicopists study polymer and fiber morphology. As polymeric materialis play a major role in our way of living - clothing, shelter, fuel, chemicals - the interest has spread from a small group of theoretical physicists to the larger group of applications scientists. Until forty years ago, optical microscopy (OM) provided the only microicopical means of observing the morphology of materials. Then transmission electron microscopes (TEM) brought a new depth and resolution of fine structures not previously known. The methodology of preparing materials for TEM, ultramicrotomy and replication, are revealing but tedious and replete with artifacts. Bridging the gap between OM and TEM the scanning electron microscopes (SEM), in use over the past fifteen years, have provided easily available and interpretable surface images of fibers, fabrics, membranes, films and composites. Finally, the limited resolution of the SEM has been improved by the use of modern composite instruments known as analytical electron microscopes (AEM).


2003 ◽  
Vol 9 (4) ◽  
pp. 368-368
Author(s):  
Hiroyasu Saka

This book deals with in situ dynamic observation and analysis of heterogeneous catalysis using environmental cells (EC) in transmission (TEM) and scanning electron microscopes (SEM). In general, it is based on outstanding and unique works carried out by the authors themselves over the past three decades, who pioneered this key enabling area of materials science.


Author(s):  
S.J. Krause ◽  
G.N. Maracas ◽  
W.J. Varhue ◽  
D.C. Joy

The advent of scanning electron microscopes (SEMs) with reliable, high performance field emission guns (FEG) has afforded many opportunities to obtain new information at low voltages not available at higher voltages in traditional SEMs equipped with tungsten hairpin or LaB6 filaments. The FEG SEMs are able to operate at low voltages with both high brightness and high resolution (HR) due to the small source size and low energy spread of the beam. Resolution of 4 nm down to 1.5 nm are routinely possible in the energy range from 1 to 5 keV along with standard image recording times of 1 to 2 minutes. The low voltage capabilities have allowed insulating materials, such as polymers, composites, and ceramics to be imaged at high resolutions at energies below the second crossover, usually around 1 to 2 keV, without experiencing image artifacts from negative surface charging normally found in uncoated insulators at higher operating voltages.


1990 ◽  
Vol 21 (1-2) ◽  
pp. 57-68 ◽  
Author(s):  
Koichi Kanaya ◽  
Eisaku Oho ◽  
Koichi Adachi ◽  
Yoshiaki Yamamoto ◽  
Hiroshi Doi

1990 ◽  
Vol 183 ◽  
Author(s):  
David C Joy

AbstractThe theory of imaging crystallographic defects in solid specimens through the use of electron channeling contrast is reviewed and the necessary conditions for observation are deduced. It is shown that current high performance field emission scanning electron microscopes can meet these requirements and produce dislocation images from suitable materials.


Scanning ◽  
2006 ◽  
Vol 23 (3) ◽  
pp. 204-210 ◽  
Author(s):  
A. Khursheed ◽  
N. Karuppiah ◽  
S. H. Koh

Author(s):  
Klaus-Ruediger Peters ◽  
Martin D. Fox

Field emission scanning electron microscopes (FSEM) establish high resolution on rugged bulk surfaces. However, often visualization and recognition of image details are hindered by low contrasts. Retrieval of such obscured image information is possible with three-dimensional (3-D) imaging.3-D information can be accessed in several ways. At low magnifications direct TV-rate imaging is possible allowing continuous relocation of the specimen and deduction of 3-D information from dynamic changes of perspectives and parallax. Additionally, two images from different stereo perspectives can be simultaniously produced and 3-D information can directly be displayed through optical or electronic devices (stereo imaging). The combination of dynamic perspective changes and stereo-presentation matches the 3-D information input of the human visual system and provides an optimal tool for visual 3-D pattern recognition.At higher magnifications (>~10,000-20,000x) real time stereo imaging is not possible. 3-D information display becomes limited to stationary perspective displays generated with long frame times.


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