A high-resolution mixed field immersion lens attachment for conventional scanning electron microscopes

2002 ◽  
Vol 73 (8) ◽  
pp. 2906-2909 ◽  
Author(s):  
A. Khursheed ◽  
N. Karuppiah
Keyword(s):  
High Resolution ◽  
Electron Microscopes ◽  
Mixed Field ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

Low-voltage high-resolution Scanning Electron Microscopy of semiconductors

1989 ◽  
Vol 47 ◽  
pp. 82-83
Author(s):  
S.J. Krause ◽  
G.N. Maracas ◽  
W.J. Varhue ◽  
D.C. Joy
Keyword(s):  
High Resolution ◽  
High Performance ◽  
Low Voltage ◽  
Image Recording ◽  
Surface Charging ◽  
New Information ◽  
Negative Surface ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

The advent of scanning electron microscopes (SEMs) with reliable, high performance field emission guns (FEG) has afforded many opportunities to obtain new information at low voltages not available at higher voltages in traditional SEMs equipped with tungsten hairpin or LaB6 filaments. The FEG SEMs are able to operate at low voltages with both high brightness and high resolution (HR) due to the small source size and low energy spread of the beam. Resolution of 4 nm down to 1.5 nm are routinely possible in the energy range from 1 to 5 keV along with standard image recording times of 1 to 2 minutes. The low voltage capabilities have allowed insulating materials, such as polymers, composites, and ceramics to be imaged at high resolutions at energies below the second crossover, usually around 1 to 2 keV, without experiencing image artifacts from negative surface charging normally found in uncoated insulators at higher operating voltages.

Caustic patterns combined with second and third order astigmatism in high resolution scanning electron microscopes

1990 ◽  
Vol 21 (1-2) ◽  
pp. 57-68 ◽  
Author(s):  
Koichi Kanaya ◽  
Eisaku Oho ◽  
Koichi Adachi ◽  
Yoshiaki Yamamoto ◽  
Hiroshi Doi
Keyword(s):  
High Resolution ◽  
Third Order ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

Direct Defect Imaging in the High Resolution Sem

1990 ◽  
Vol 183 ◽  
Author(s):  
David C Joy
Keyword(s):  
High Resolution ◽  
Field Emission ◽  
High Performance ◽  
Necessary Conditions ◽  
Electron Channeling ◽  
Electron Microscopes ◽  
Crystallographic Defects ◽  
Scanning Electron Microscopes ◽  
Defect Imaging ◽  
Scanning Electron

AbstractThe theory of imaging crystallographic defects in solid specimens through the use of electron channeling contrast is reviewed and the necessary conditions for observation are deduced. It is shown that current high performance field emission scanning electron microscopes can meet these requirements and produce dislocation images from suitable materials.

scholarly journals A high-resolution add-on in-lens attachment for scanning electron microscopes

Scanning ◽  
2006 ◽  
Vol 23 (3) ◽  
pp. 204-210 ◽  
Author(s):  
A. Khursheed ◽  
N. Karuppiah ◽  
S. H. Koh
Keyword(s):  
High Resolution ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

Ultra-high resolution cinematic digital 3-D imaging of the cell surface by field-emission scanning electron microscopy

1990 ◽  
Vol 48 (3) ◽  
pp. 12-13
Author(s):  
Klaus-Ruediger Peters ◽  
Martin D. Fox
Keyword(s):  
High Resolution ◽  
Field Emission ◽  
Three Dimensional ◽  
Stereo Imaging ◽  
Information Display ◽  
Dynamic Perspective ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Image Details ◽  
Scanning Electron

Field emission scanning electron microscopes (FSEM) establish high resolution on rugged bulk surfaces. However, often visualization and recognition of image details are hindered by low contrasts. Retrieval of such obscured image information is possible with three-dimensional (3-D) imaging.3-D information can be accessed in several ways. At low magnifications direct TV-rate imaging is possible allowing continuous relocation of the specimen and deduction of 3-D information from dynamic changes of perspectives and parallax. Additionally, two images from different stereo perspectives can be simultaniously produced and 3-D information can directly be displayed through optical or electronic devices (stereo imaging). The combination of dynamic perspective changes and stereo-presentation matches the 3-D information input of the human visual system and provides an optimal tool for visual 3-D pattern recognition.At higher magnifications (>~10,000-20,000x) real time stereo imaging is not possible. 3-D information display becomes limited to stationary perspective displays generated with long frame times.

scholarly journals An Innovative Method for Imaging and Chemical Analysis of Wet Samples in Scanning Electron Microscopes

2005 ◽  
Vol 13 (4) ◽  
pp. 10-15 ◽  
Author(s):  
Irit Ruach-Nir
Keyword(s):  
Biological Sciences ◽  
Electron Microscopy ◽  
High Resolution ◽  
Chemical Analysis ◽  
Sample Processing ◽  
Innovative Method ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

Electron microscopy (EM) of fully wet samples is a valuable tool for studies in the material, medical and biological sciences. In order to appreciate the natural structures of tissues or materials they should be examined in their native wet state, as opposed to a dry form that incorporates artifacts of sample processing. Viewing and analyzing wet samples at high resolution has undergone a significant improvement only recently due to the innovative WETSEMTM technology developed by QuantomiX.

scholarly journals On the Sub-Nanometer Resolution of Scanning Electron and Helium Ion Microscopes

2009 ◽  
Vol 17 (2) ◽  
pp. 6-13 ◽  
Author(s):  
András E. Vladár ◽  
Michael T. Postek ◽  
Bin Ming
Keyword(s):  
High Resolution ◽  
Lattice Spacing ◽  
Nanometer Scale ◽  
The Past ◽  
Helium Ion ◽  
Dimensional Measurements ◽  
Electron Microscopes ◽  
High Level ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

All forms of microscopy are being pushed to the limit by nanotechnology. This is especially true for high-resolution scanning electron and helium ion microscopes, which are proving to be extremely useful for nanometer-scale imaging, characterization, and dimensional measurements. Excellent resolution is essential for imaging nanomaterials. Hence, there is a relentless quest to achieve better and better resolution with various electron and ion microscopes and to monitor and maintain these instruments to achieve the best possible performance levels.The ability to resolve fine details with a microscope has greatly improved over the past 20 years. The resolution achievable with the newest scanning electron microscopes (SEMs) can now be at or below 0.4 nm and for the scanning helium ion microscope (HeIM), 0.24 nm has been reported. To put this into perspective, the {111} crystal plane in silicon (Si) has 0.32 nm lattice spacing, so one cubic nanometer in the Si crystal contains only a few atoms. Therefore, an instrument must be performing at the highest level possible to resolve routinely the finest structures. Clearly, the instrument operator must also be functioning at a high level as well to achieve the best resolution and to prove that the instrument is capable of doing the work.

Current State of Biological High-Resolution Scanning Electron Microscopy

1988 ◽  
Vol 46 ◽  
pp. 180-181 ◽  
Author(s):  
Klaus-Ruediger Peters
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Backscattered Electrons ◽  
Lens Position ◽  
Low Voltage Operation ◽  
Signal Collection ◽  
Probe Size ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

A new generation of high performance field emission scanning electron microscopes (FSEM) is now commercially available (JEOL 890, Hitachi S 900, ISI OS 130-F) characterized by an "in lens" position of the specimen where probe diameters are reduced and signal collection improved. Additionally, low voltage operation is extended to 1 kV. Compared to the first generation of FSEM (JE0L JSM 30, Hitachi S 800), which utilized a specimen position below the final lens, specimen size had to be reduced but useful magnification could be impressively increased in both low (1-4 kV) and high (5-40 kV) voltage operation, i.e. from 50,000 to 200,000 and 250,000 to 1,000,000 x respectively.At high accelerating voltage and magnification, contrasts on biological specimens are well characterized1 and are produced by the entering probe electrons in the outmost surface layer within -vl nm depth. Backscattered electrons produce only a background signal. Under these conditions (FIG. 1) image quality is similar to conventional TEM (FIG. 2) and only limited at magnifications >1,000,000 x by probe size (0.5 nm) or non-localization effects (%0.5 nm).

Sign in / Sign up

Export Citation Format

Share Document