Role of Na2CO3 Addition in Epitaxial Growth of Ruby Crystal Films on Sapphire Crystal Substrates via MoO3 Flux Evaporation

2020 ◽  
Vol 20 (6) ◽  
pp. 4157-4163
Author(s):  
Shunsuke Ayuzawa ◽  
Sayaka Suzuki ◽  
Miki Hidaka ◽  
Tetsuya Yamada ◽  
Shuji Oishi ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Sapphire Crystal ◽  
Flux Evaporation ◽  
Crystal Films

Epitaxial Growth of Ruby Crystal Films on Sapphire Crystal Substrates and Solubility of Aluminum Oxide in Molybdenum Trioxide Flux

2019 ◽  
Vol 19 (7) ◽  
pp. 4095-4100 ◽  
Author(s):  
Shunsuke Ayuzawa ◽  
Sayaka Suzuki ◽  
Miki Hidaka ◽  
Shuji Oishi ◽  
Katsuya Teshima
Keyword(s):  
Aluminum Oxide ◽  
Epitaxial Growth ◽  
Molybdenum Trioxide ◽  
Sapphire Crystal ◽  
Crystal Films

Oxide Mediated Epitaxial Growth of CoSi2 in a Single Deposition Step

1999 ◽  
Vol 564 ◽  
Author(s):  
S. Ohmi ◽  
R. T. Tung
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Diffusion Barrier ◽  
Blocking Layer ◽  
Deposition Step

AbstractA number of modifications of the oxide-mediated epitaxy (OME) technique are presented which have enabled the growth of thick (∼25–40nm) epitaxial CoSi2 layers in a single deposition sequence. The uses of (a) a thin Ti cap, (b) a thin Ti blocking layer, (c) the codeposition of Co-rich CoSix, and (d) the co-deposition of Col−xTix. have all been shown to lead to improved epitaxial quality over the pure Co OME process, for Co thickness greater than 6nm. Essentially uniform, single crystal silicide layers of over 25nm have been grown in a single deposition step. These results are supportive of the proposed role of a diffusion barrier/kinetics retarder on the part of the interlayer in the OME and the Ti-interlayer mediated epitaxy processes.

A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy

2010 ◽  
Vol 645-648 ◽  
pp. 271-276 ◽  
Author(s):  
Robert E. Stahlbush ◽  
Rachael L. Myers-Ward ◽  
Brenda L. VanMil ◽  
D. Kurt Gaskill ◽  
Charles R. Eddy
Keyword(s):  
Epitaxial Growth ◽  
Basal Plane ◽  
Reduction Process ◽  
Epitaxial Layers ◽  
In Situ Growth ◽  
Half Loop ◽  
Insight Into

The recently developed technique of UVPL imaging has been used to track the path of basal plane dislocations (BPDs) in SiC epitaxial layers. The glide of BPDs during epitaxial growth has been observed and the role of this glide in forming half-loop arrays has been examined. The ability to track the path of BPDs through the epitaxy has made it possible to develop a BPD reduction process for epitaxy grown on 8° offcut wafers, which uses an in situ growth interrupt and has achieved a BPD reduction of > 98%. The images also provide insight into the strong BPD reduction that typically occurs in epitaxy grown on 4° offcut wafers.

On the role of Pb in epitaxial growth of thin Co films on Cu(111)

1998 ◽  
Vol 402-404 ◽  
pp. 263-267 ◽  
Author(s):  
S Mróz ◽  
H Otop ◽  
Z Jankowski
Keyword(s):  
Epitaxial Growth

Role of Ga and In adatoms in the epitaxial growth of β−Ga2O3

2020 ◽  
Vol 102 (3) ◽  
Author(s):  
Mengen Wang ◽  
Sai Mu ◽  
Chris G. Van de Walle
Keyword(s):  
Epitaxial Growth

Epitaxial growth of single crystal films of Ba1−xKxBiO3+y superconductors

1997 ◽  
Vol 172 (3-4) ◽  
pp. 396-403 ◽  
Author(s):  
S.V. Shiryaev ◽  
S.N. Barilo ◽  
N.S. Orlova ◽  
D.I. Zhigunov ◽  
A.S. Shestac ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Single Crystal Films ◽  
Crystal Films
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