Role of Ga and In adatoms in the epitaxial growth of β−Ga2O3

2020 ◽  
Vol 102 (3) ◽  
Author(s):  
Mengen Wang ◽  
Sai Mu ◽  
Chris G. Van de Walle
Keyword(s):  
Epitaxial Growth

Oxide Mediated Epitaxial Growth of CoSi2 in a Single Deposition Step

1999 ◽  
Vol 564 ◽  
Author(s):  
S. Ohmi ◽  
R. T. Tung
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Diffusion Barrier ◽  
Blocking Layer ◽  
Deposition Step

AbstractA number of modifications of the oxide-mediated epitaxy (OME) technique are presented which have enabled the growth of thick (∼25–40nm) epitaxial CoSi2 layers in a single deposition sequence. The uses of (a) a thin Ti cap, (b) a thin Ti blocking layer, (c) the codeposition of Co-rich CoSix, and (d) the co-deposition of Col−xTix. have all been shown to lead to improved epitaxial quality over the pure Co OME process, for Co thickness greater than 6nm. Essentially uniform, single crystal silicide layers of over 25nm have been grown in a single deposition step. These results are supportive of the proposed role of a diffusion barrier/kinetics retarder on the part of the interlayer in the OME and the Ti-interlayer mediated epitaxy processes.

A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy

2010 ◽  
Vol 645-648 ◽  
pp. 271-276 ◽  
Author(s):  
Robert E. Stahlbush ◽  
Rachael L. Myers-Ward ◽  
Brenda L. VanMil ◽  
D. Kurt Gaskill ◽  
Charles R. Eddy
Keyword(s):  
Epitaxial Growth ◽  
Basal Plane ◽  
Reduction Process ◽  
Epitaxial Layers ◽  
In Situ Growth ◽  
Half Loop ◽  
Insight Into

The recently developed technique of UVPL imaging has been used to track the path of basal plane dislocations (BPDs) in SiC epitaxial layers. The glide of BPDs during epitaxial growth has been observed and the role of this glide in forming half-loop arrays has been examined. The ability to track the path of BPDs through the epitaxy has made it possible to develop a BPD reduction process for epitaxy grown on 8° offcut wafers, which uses an in situ growth interrupt and has achieved a BPD reduction of > 98%. The images also provide insight into the strong BPD reduction that typically occurs in epitaxy grown on 4° offcut wafers.

On the role of Pb in epitaxial growth of thin Co films on Cu(111)

1998 ◽  
Vol 402-404 ◽  
pp. 263-267 ◽  
Author(s):  
S Mróz ◽  
H Otop ◽  
Z Jankowski
Keyword(s):  
Epitaxial Growth

The role of 2D islands in the epitaxial growth of (001) CdTe

1998 ◽  
Vol 123-124 ◽  
pp. 283-288 ◽  
Author(s):  
L. Carbonell ◽  
S. Tatarenko ◽  
J. Cibert ◽  
J.M. Hartmann ◽  
Guido Mula ◽  
...  
Keyword(s):  
Epitaxial Growth

EPITAXIAL GROWTH AND THE ROLE OF SURFACTANTS

1997 ◽  
Vol 04 (02) ◽  
pp. 353-359 ◽  
Author(s):  
JUAN J. DE MIGUEL
Keyword(s):  
Epitaxial Growth ◽  
Current Knowledge ◽  
Epitaxial Films

Intensive efforts are being devoted to improving the techniques of epitaxial growth, with the aim of increasing the quality of newly developed materials. The use of surfactants is one of the latest contributions to this field. Surfactants can be used to modify the structure of epitaxial films in a variety of ways. This article reviews our current knowledge of this subject.

The Effects of Surface Contamination on the Biaxially Textured Substrate for YBCO Thick Film Deposition

1999 ◽  
Vol 13 (09n10) ◽  
pp. 997-1004
Author(s):  
M. L. Apicella ◽  
V. Boffa ◽  
G. Celentano ◽  
F. Fabbri ◽  
T. Petrisor
Keyword(s):  
Epitaxial Growth ◽  
Rf Sputtering ◽  
Auger Spectroscopy ◽  
Film Deposition ◽  
Surface Contamination ◽  
Superconducting Tapes ◽  
Auger Analysis ◽  
Ni Substrate ◽  
Layer Deposition

The epitaxial growth of YBa 2 Cu 3 O 7-x (YBCO) films on biaxially textured substrates is one of the most promising technique for the fabrication of high current superconducting tapes operating at high temperature. Ni is very attractive as substrate because it easily develops a (100)[001] cubic texture. The low oxidation resistance represents the main drawback of the Ni substrate. In order to better assess the role of oxygen on the Ni substrates, a surface physics technique as Auger spectroscopy has been used. It has allowed to evaluate the amount of impurities for different Ni processing and exposure to the air. The results demonstrate that the surface contamination can be efficiently removed by RF sputtering before buffer layer deposition. This procedure allows to obtain CeO 2/Pd/Ni architecture by laser ablation with a good epitaxy both of Pd and CeO 2 films. On the contrary, when CeO 2 is directly deposited on Ni a low epitaxy is obtained. The Auger analysis confirms that the formation of (111) NiO at the Ni - CeO 2 interface hampers the epitaxial growth of the ceria film.

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