Mist Chemical Vapor Deposition of Single-Phase Metastable Rhombohedral Indium Tin Oxide Epitaxial Thin Films with High Electrical Conductivity and Transparency on Various α-Al2O3 Substrates

2018 ◽  
Vol 18 (7) ◽  
pp. 4022-4028 ◽  
Author(s):  
Hiroyuki Nishinaka ◽  
Masahiro Yoshimoto
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
Epitaxial Thin Films ◽  
High Electrical Conductivity ◽  
Α Al2o3

scholarly journals Indium‐tin oxide thin films prepared by chemical vapor deposition

1991 ◽  
Vol 70 (7) ◽  
pp. 3848-3851 ◽  
Author(s):  
Toshiro Maruyama ◽  
Kunihiro Fukui
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Oxide Thin Films

Good Conformability of Indium-Tin Oxide Thin Films Prepared by Spray Chemical Vapor Deposition

2009 ◽  
Vol 12 (5) ◽  
pp. D42 ◽  
Author(s):  
Takeshi Kondo ◽  
Yutaka Sawada ◽  
Hiroshi. Funakubo ◽  
Kensuke Akiyama ◽  
Takanori Kiguchi ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Oxide Thin Films

Effect of substrate temperature on the bonded states of indium tin oxide thin films deposited by plasma enhanced chemical vapor deposition

2003 ◽  
Vol 426 (1-2) ◽  
pp. 124-131 ◽  
Author(s):  
Young-Soon Kim ◽  
Young-Chul Park ◽  
S.G. Ansari ◽  
Byung-Soo Lee ◽  
Hyung-Shik Shin
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Oxide Thin Films

Chemical Vapor Deposition of Sr1−xBaxNb2O6 Thin Films Using Metal Alkoxide Precursors

2000 ◽  
Vol 15 (8) ◽  
pp. 1702-1708
Author(s):  
Ruichao Zhang ◽  
Ren Xu
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Thin Layers ◽  
Metal Alkoxide ◽  
Stoichiometry Control ◽  
Alkoxide Precursors

A novel two-step metalorganic chemical vapor deposition process was used in this study to prepare Sr1−xBaxNb2O6 (SBN) thin films. Two thin layers of single-phase SrNb2O6 and BaNb2O6 were deposited alternately on a silicon substrate, and the solid solution of SBN was obtained by high-temperature annealing. The stoichiometry control of the SrNb2O6 and the BaNb2O6 thin films was achieved through deposition process control, according to the evaporation characteristics of double metal alkoxide. The evaporation behavior of double metal alkoxide precursors SrNb2(1-OC4H9)12 and BaNb2(1-OC4H9)12 was studied, and the results were compared with the evaporation of single alkoxide Nb(1-OC4H9)5.

Properties of Tin Oxide Films Prepared by MOCVD

2004 ◽  
Vol 449-452 ◽  
pp. 997-1000 ◽  
Author(s):  
Gwang Pyo Choi ◽  
Yong Joo Park ◽  
Whyo Sup Noh ◽  
Jin Seong Park
Keyword(s):  
Thin Films ◽  
Oxygen Content ◽  
Tin Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Tin Oxide Films ◽  
N2 Annealing

Tin oxide thin films were deposited at 375 °C on α-alumina substrate by metal-organic chemical vapor deposition (MOCVD) process. A number of hillocks on the film were formed after air annealing at 500 °C for 30 min and few things in N2 annealing. The oxygen content and the binding energy after air annealing came to close the stoichiometric SnO2. The cauliflower hillocks of the film seem to be formed by the continuous migration of crystallites from a cauliflower grain on the substrate to release the stress due to the increase of oxygen content and volume.

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