Concentration Depth Profiles of Microplastic Particles in River Flow and Implications for Surface Sampling

ABSTRACTClose-spaced isothermal vapor phase epitaxy (VPE) was used to grow quaternary Hg1−x−yCdxZnyTe epillayers on Cd1−zZnzTe substrates. Composition, resistivity, and carrier concentration depth profiles were determined in the epilayers. p-n junctions were produced from material with appropriate properties using the Hg diffusion method. The junctions showed excellent I-V characteristics and high spectral detectivities.

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Heat-Resistant Barrier Contacts Made on the Basis of TiBx and ZrBx to SiC and GaN

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.565 ◽

2009 ◽

Vol 615-617 ◽

pp. 565-568 ◽

Cited By ~ 1

Author(s):

Alexander A. Lebedev ◽

A.E. Belyaev ◽

N.S. Boltovets ◽

V.N. Ivanov ◽

Raisa V. Konakova ◽

...

Keyword(s):

Silicon Carbide ◽

Phase Composition ◽

Heat Resistance ◽

Contact Structure ◽

Schottky Barriers ◽

Electrophysical Properties ◽

Depth Profiles ◽

Contact Metallization ◽

Before And After ◽

Concentration Depth Profiles

We studied the heat resistance of AuTiBx (ZrBx) barrier contacts to n-SiC 6H and n-GaN. The Schottky barrier diode (SBD) parameters, the concentration depth profiles for contact structure components and the phase composition of contact metallization were measured both before and after rapid thermal annealing (RTA) at temperatures up to 900 °С (1000 °С) for contacts to GaN (SiC 6H). It is shown that the layered structure of metallization and electrophysical properties of Schottky barriers (SBs) remain stable after RTA, thus indicating their heat resistance. The ideality factor n of the I-V characteristic of SBDs after RTA was 1.2, while the SB height φВ was ~0.9 eV (~0.8 eV) for the gallium nitride (silicon carbide) barrier structures.

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Assessment of biofilm changes and concentration-depth profiles during arsenopyrite oxidation by Acidithiobacillus thiooxidans

Environmental Science and Pollution Research ◽

10.1007/s11356-017-9619-8 ◽

2017 ◽

Vol 24 (24) ◽

pp. 20082-20092 ◽

Cited By ~ 6

Author(s):

Hugo Ramírez-Aldaba ◽

Jorge Vazquez-Arenas ◽

Fabiola S. Sosa-Rodríguez ◽

Donato Valdez-Pérez ◽

Estela Ruiz-Baca ◽

...

Keyword(s):

Acidithiobacillus Thiooxidans ◽

Depth Profiles ◽

Concentration Depth Profiles

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Parameters for Nitrogen Diffusion in Ni, Ti, and Al Obtained from Implanted Bilayers

MRS Proceedings ◽

10.1557/proc-279-485 ◽

1992 ◽

Vol 279 ◽

Author(s):

K. K. Bourdelle ◽

D. O. Boerma

Keyword(s):

Nuclear Reaction ◽

Room Temperature ◽

Vacuum Annealing ◽

Nitride Layer ◽

Nuclear Reaction Analysis ◽

Nitrogen Diffusion ◽

Depth Profiles ◽

Solid Interface ◽

Before And After ◽

Concentration Depth Profiles

ABSTRACTNi foils and samples consisting of bilayers of Ni or Fe on Al, Ti or Si were implanted at room temperature with 15N+ ions to fluences of around 1×l017 N/cm2. The concentration depth profiles of 15N were determined with nuclear reaction analysis before and after vacuum annealing. It was found that the penetrability for N atoms of the surface and the solid/solid interface plays an important role in the N redistribution during implantation or annealing. The formation of a nitride layer or nitride clusters in Ni and Fe was deduced. Parameters for N migration determined for the metals under investigation are discussed in terms of models.

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