First-Principles Energetics of Some Nonmetallic Impurity Atoms in Plutonium Dioxide

2015 ◽  
Vol 119 (27) ◽  
pp. 14879-14889 ◽  
Author(s):  
Bingyun Ao ◽  
Haiyan Lu ◽  
Ruizhi Qiu ◽  
Xiaoqiu Ye ◽  
Peng Shi ◽  
...  
1998 ◽  
Vol 527 ◽  
Author(s):  
O. Schneeweiss ◽  
I. Turek ◽  
J. Čermák ◽  
P. Lejček

ABSTRACTLocation of diffused 57Co atoms in single crystals, bicrystals and polycrystals of pure iron and Fe72Al28alloy were investigated by means of emission Mössbauer spectroscopy. To interpret the results, first principles calculations of iron atom magnetic moments and hyper-fine field were carried out. From comparison of M6ssbauer spectra of single crystals with those of bicrystals and polycrystals, an information about grain boundary positions occupied by diffusing atoms is obtained. It is shown that about 5% of the diffusing atoms at the {112} grain boundary of iron are located at the positions either having impurity atoms in the nearest neighbourhood or characterized by larger atomic spacing in comparison with the bulk. In the Fe72Al28 a dominating portion of diffusing atoms have different surrounding than in grain volume. An enrichment of grain boundaries by aluminum could explain their hyperfine parameters.


1992 ◽  
Vol 291 ◽  
Author(s):  
Genrich L. Krasko

ABSTRACTThe cohesion of a grain boundary (GB) is believed to be the controlling factor limiting theductility of high-strength metallic alloys, and particularly W. Intergranular embrittlement isusually associated with segregation of impurities at the GBs. Impurities present in ppmconcentrations can result in a dramatic decrease in plasticity. This paper reviews recent results onboth semi-empirical and first-principles modelling of the energetics and the electronic structuresof impurities on a Σ3 (111) GB in W. Our calculations have shown that impurities, such as N, O,P, S, and Si weaken the intergranular cohesion resulting in “loosening” the GB. The presence ofB and C on the contrary, enhances the interatomic interaction across the GB. The so-called site-competition effect should play an important role affecting impurity distribution in W GBs.Among the impurities analyzed, B in the GB has the lowest energy, and thus would tend todisplace other impurity atoms from the GB. Microalloying with 10-50 ppm B may be an effectiveway of improving tungsten's ductility. These results are important for understanding thefundamental physics of intergranular embrittlement.


2015 ◽  
Vol 26 (11) ◽  
pp. 1550130 ◽  
Author(s):  
Amirhosein Esmailian ◽  
Masoud Shahrokhi ◽  
Faramarz Kanjouri

We have studied the electronic structure and magnetic properties of Nitrogen and Carbon codoped ZnO (5,0) single-walled zigzag nanotube using first-principle calculations based on the density functional theory. We performed our calculations for N - and C - codoping ZnO nanotube in two different configurations. For the first configuration in which the two impurity atoms ( N or C ) are on first nearest-neighbor sites in the plane of codoping, our calculation predicts that the N - and C -codoped ZnO nanotubes are antiferromagnetic material with no net magnetization. On the other hand, it is found that for the configuration in which the two impurity atoms are next nearest-neighbors, a spin polarization results in a magnetic moment in the N - and C -codoped ZnO nanotubes.


Carbon ◽  
2008 ◽  
Vol 46 (2) ◽  
pp. 185-188 ◽  
Author(s):  
Jung-Hae Choi ◽  
Seung-Cheol Lee ◽  
Kwang-Ryeol Lee

2009 ◽  
Vol 2009 ◽  
pp. 1-3 ◽  
Author(s):  
Koji Sueoka ◽  
Ken Kamimura ◽  
Seiji Shiba

The gettering of 4th row element impurities (K, Ca, 3d transition metals, and Zn) in Si crystals by dopant atoms was systematically investigated by first-principles calculation through evaluation of the diffusion barrier and the binding energy. The dopant atoms considered include p-type dopants (B), n-type dopants (P, As, Sb), or light elements (C, O). It was found that (1) the diffusion barrier of impurity atoms decreases with an increase in their atomic number up to Ni, (2) B atom becomes an efficient gettering center for metals except for Ni, (3) most of the metals except for Fe and Co cannot be gettered by n-type dopants, and (4) C and O atoms alone do not become efficient gettering centers for the metals used in actual LSI processes. The vacancy and n-type dopant complexes (P, As, Sb) can be efficient gettering centers for Cu in n/n+ epitaxial wafers.


2011 ◽  
Vol 83 (5) ◽  
Author(s):  
Abdulrafiu T. Raji ◽  
Riccardo Mazzarello ◽  
Sandro Scandolo ◽  
Schadrack Nsengiyumva ◽  
Margit Härting ◽  
...  

2019 ◽  
Vol 12 (04) ◽  
pp. 1950058 ◽  
Author(s):  
Gongjie Xu ◽  
Gongming Song ◽  
Yaole Wang

The improvement of the arsine adsorption on monolayer MoS2 by doping has been investigated by first-principles calculation. The impurity atoms Si, P, and Cl, have been introduced to substitute S atoms to form an [Formula: see text]- or [Formula: see text]-type system. The electronic properties of MoS2 with dopants P and Cl are insensitive to the adsorption of AsH3. The Si-MoS2 with adsorbed AsH3 configuration has the largest adsorption energy, the lowest adsorbed height, and the most effective charge transfer. It is indicated that the properties of MoS2 can be improved by doping for detecting AsH3 molecules.


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