Structure Transition Mechanism of Single-Crystalline Silicon, g-C3N4, and Diamond Nanocone Arrays Synthesized by Plasma Sputtering Reaction Deposition

2015 ◽  
Vol 119 (52) ◽  
pp. 29062-29070 ◽  
Author(s):  
Zhuoqi Xu ◽  
Leilei Guan ◽  
Hui Li ◽  
Jian Sun ◽  
Zhifeng Ying ◽  
...  
2017 ◽  
Vol 34 (2) ◽  
pp. 025202
Author(s):  
Zhi-Cheng Wu ◽  
Lei-Lei Guan ◽  
Hui Li ◽  
Jia-Da Wu ◽  
Jian Sun ◽  
...  

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  

1998 ◽  
Vol 539 ◽  
Author(s):  
T. Cramer ◽  
A. Wanner ◽  
P. Gumbsch

AbstractTensile tests on notched plates of single-crystalline silicon were carried out at high overloads. Cracks were forced to propagate on {110} planes in a <110> direction. The dynamics of the fracture process was measured using the potential drop technique and correlated with the fracture surface morphology. Crack propagation velocity did not exceed a terminal velocity of v = 3800 m/s, which corresponds to 83%7 of the Rayleigh wave velocity vR. Specimens fractured at low stresses exhibited crystallographic cleavage whereas a transition from mirror-like smooth regions to rougher hackle zones was observed in case of the specimens fractured at high stresses. Inspection of the mirror zone at high magnification revealed a deviation of the {110} plane onto {111} crystallographic facets.


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