Interfacial Defect Engineering on Electronic States of Two-Dimensional AlN/MoS2 Heterostructure

2017 ◽  
Vol 121 (12) ◽  
pp. 6605-6613 ◽  
Author(s):  
Qinglong Fang ◽  
Yuhong Huang ◽  
Yaping Miao ◽  
Kewei Xu ◽  
Yan Li ◽  
...  
Keyword(s):  
Electronic States ◽  
Two Dimensional ◽  
Defect Engineering ◽  
Interfacial Defect

CESIUM-INDUCED QUANTIZED 2D ELECTRON CHANNEL ON THE InAs(110) SURFACE

1995 ◽  
Vol 02 (06) ◽  
pp. 723-729 ◽  
Author(s):  
V. YU. ARISTOV ◽  
G. LE LAY ◽  
M. GREHK ◽  
V.M. ZHILIN ◽  
A. TALEB-IBRAHIMI ◽  
...  
Keyword(s):  
Electron Emission ◽  
Electronic States ◽  
Photoemission Spectroscopy ◽  
Spectral Features ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Discrete Energy ◽  
Electron Channel ◽  
Self Consistent ◽  
Electron Photoemission

We present the first clear evidence of electron emission arising directly from a quantized two-dimensional electron channel from the InAs (110) surface covered by a few Cs atoms (≈ 0.01 Cs ML). Spectral features observed by photoemission spectroscopy using synchrotron radiation reveal discrete-energy electronic states resulting from quantization in the direction normal to the surface. The electron photoemission originates from the vicinities of [Formula: see text] points in the first and second surface Brillouin zones corresponding to the bottom of the conduction band. These findings are in agreement with self-consistent theoretical energy-level calculations using a jellium-like model.

scholarly journals One-dimensional versus two-dimensional electronic states in vicinal surfaces

2005 ◽  
Vol 7 ◽  
pp. 101-101 ◽  
Author(s):  
J E Ortega ◽  
M Ruiz-Osés ◽  
J Cordón ◽  
A Mugarza ◽  
J Kuntze ◽  
...  
Keyword(s):  
Electronic States ◽  
Two Dimensional ◽  
Vicinal Surfaces ◽  
One Dimensional

Defect-Engineering-Enhanced Electrical Manipulation of Anisotropic Excitons in Two-Dimensional ReS2

2021 ◽  
pp. 101562
Author(s):  
Shuyi Wu ◽  
Wen Pan ◽  
Jinlei Zhang ◽  
Chunlan Ma ◽  
Yun Shan ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Defect Engineering ◽  
Electrical Manipulation

scholarly journals Origin of two-dimensional electronic states at Si- and Gd-terminated surfaces of GdRh2Si2 (001)

2019 ◽  
Vol 100 (7) ◽  
Author(s):  
A. Yu. Vyazovskaya ◽  
M. M. Otrokov ◽  
Yu. M. Koroteev ◽  
K. Kummer ◽  
M. Güttler ◽  
...  
Keyword(s):  
Electronic States ◽  
Two Dimensional

RECENT ADVANCES IN TWO-DIMENSIONAL PHOTONIC CRYSTALS SLAB STRUCTURE: DEFECT ENGINEERING AND HETEROSTRUCTURE

NANO ◽  
2007 ◽  
Vol 02 (01) ◽  
pp. 1-13 ◽  
Author(s):  
BONG-SHIK SONG ◽  
TAKASHI ASANO ◽  
SUSUMU NODA
Keyword(s):  
Photonic Crystals ◽  
Optical Sensors ◽  
Quantum Electrodynamics ◽  
Cavity Quantum Electrodynamics ◽  
Design Rule ◽  
Two Dimensional ◽  
Defect Engineering ◽  
Nanophotonic Devices ◽  
Multiple Wavelength ◽  
Accelerate Development

This paper presents a review on the selected highlights of highly-functional devices in two-dimensional photonic crystals slab structure. By introducing artificial defects in the photonic crystals (that is, defect engineering), novel photonic devices of line-defect waveguides and point-defect nanocavity are demonstrated. For more efficient manipulation of photons, the fundamentals of heterostructure photonic crystals are also reviewed. Heterostructures consist of multiple photonic crystals with different lattice-constants and they provide further high-functionalities such as multiple wavelength operation while maintaining optimized performance and the enhancement of photon manipulation efficiency. Because of the importance of high quality (Q) nanocavity for realization of nanophotonic devices, we also review the design rule of high Q nanocavities and present recent experiments on nanocavities with Q factors in excess of one million (~ 1.2 × 106). The progress of defect engineering and heterostructure in two-dimensional photonic crystals slab structure will accelerate development in ultrasmall photonic chips, cavity quantum electrodynamics, optical sensors, etc.

scholarly journals Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Lei Yin ◽  
Peng He ◽  
Ruiqing Cheng ◽  
Feng Wang ◽  
Fengmei Wang ◽  
...  
Keyword(s):  
Transition Metal ◽  
High Performance ◽  
Infrared Detector ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Electric Transport ◽  
Defect Engineering ◽  
Fast Switching ◽  
Metal Dichalcogenides ◽  
Poor Stability

Abstract Defects play a crucial role in determining electric transport properties of two-dimensional transition metal dichalcogenides. In particular, defect-induced deep traps have been demonstrated to possess the ability to capture carriers. However, due to their poor stability and controllability, most studies focus on eliminating this trap effect, and little consideration was devoted to the applications of their inherent capabilities on electronics. Here, we report the realization of robust trap effect, which can capture carriers and store them steadily, in two-dimensional MoS2xSe2(1-x) via synergistic effect of sulphur vacancies and isoelectronic selenium atoms. As a result, infrared detection with very high photoresponsivity (2.4 × 105 A W−1) and photoswitching ratio (~108), as well as nonvolatile infrared memory with high program/erase ratio (~108) and fast switching time, are achieved just based on an individual flake. This demonstration of defect engineering opens up an avenue for achieving high-performance infrared detector and memory.

Sign in / Sign up

Export Citation Format

Share Document