In this study, the performances of red CsPbI3-based all-inorganic perovskite quantum-dot light-emitting diodes (IPQLEDs) employing polymeric crystalline Poly(3-hexylthiophene-2,5-diyl) (P3HT), poly(9-vinycarbazole) (PVK), Poly(N,N′-bis-4-butylphenyl-N,N′-bisphenyl)benzidine (Poly-TPD) and 9,9-Bis[4-[(4-ethenylphenyl)methoxy]phenyl]-N2,N7-di-1-naphthalenyl-N2,N7-diphenyl-9H-fluorene-2,7-diamine (VB-FNPD) as the hole transporting layers (HTLs) have been demonstrated. The purpose of this work is an attempt to promote the development of device structures and hole transporting materials for the CsPbI3-based IPQLEDs via a comparative study of different HTLs. A full-coverage quantum dot (QD) film without the aggregation can be obtained by coating it with VB-FNPD, and thus, the best external quantum efficiency (EQE) of 7.28% was achieved in the VB-FNPD device. We also reported a standing method to further improve the degree of VB-FNPD polymerization, resulting in the improved device performance, with the EQE of 8.64%.
Polymeric Hole Transport Materials for Red CsPbI3 Perovskite Quantum-Dot Light-Emitting Diodes
