scholarly journals Topological Kagome Magnet Co3Sn2S2 Thin Flakes with High Electron Mobility and Large Anomalous Hall Effect

Nano Letters ◽  
2020 ◽  
Vol 20 (10) ◽  
pp. 7476-7481
Author(s):  
M. Tanaka ◽  
Y. Fujishiro ◽  
M. Mogi ◽  
Y. Kaneko ◽  
T. Yokosawa ◽  
...  
Keyword(s):  
Hall Effect ◽  
Electron Mobility ◽  
Anomalous Hall Effect ◽  
High Electron ◽  
High Electron Mobility

Anomalous Hall Effect in Gd-implanted Wurtzite AlxGa1-xN High Electron Mobility Transistor Structures

2008 ◽  
Vol 1111 ◽  
Author(s):  
Fang-Yuh Lo ◽  
Alexander Melnikov ◽  
Dirk Reuter ◽  
Yvon Cordier ◽  
Andreas D. Wieck
Keyword(s):  
Hall Effect ◽  
Electron Mobility ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Magnetic Ordering ◽  
High Electron Mobility Transistor ◽  
Anomalous Hall Effect ◽  
Sample Surface ◽  
High Electron ◽  
High Electron Mobility

AbstractAlxGa1- xN/GaN high electron mobility transistor (HEMT) structures grown by ammonia-source molecular beam epitaxy (MBE) are focused-ion-beam implanted with 300 keV Gd-ions at room temperature. The two-dimensional electron gas (2DEG) of these HEMT structures is located 27 nm underneath the sample surface. At 4.2 K, current-voltage characteristics across implanted rectangles show that the structures remain conducting up to a Gd-dose of 1×1012 cm-2. Anomalous Hall effect (AHE) is observed at T = 4.2 K for structures implanted with Gd, whose dose is 3×1011 cm-2. Measurements of AHE in the wide temperature range from 2.4 K to 300 K show that the magnetic ordering temperature of these structures is around 100 K. Therefore, these Gd-implanted HEMT structures containing the still conducting 2DEG, which is now embedded in a ferromagnetic semiconductor, open the possibility to polarize the electron spins.

scholarly journals High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

2016 ◽  
Vol 12 (3) ◽  
pp. 223-227 ◽  
Author(s):  
Denis A. Bandurin ◽  
Anastasia V. Tyurnina ◽  
Geliang L. Yu ◽  
Artem Mishchenko ◽  
Viktor Zólyomi ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Electron Mobility ◽  
Quantum Hall ◽  
Optical Response ◽  
High Electron ◽  
High Electron Mobility

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Polymer Crystals: Approaching Crystal Structure and High Electron Mobility in Conjugated Polymer Crystals (Adv. Mater. 10/2021)

2021 ◽  
Vol 33 (10) ◽  
pp. 2170075
Author(s):  
Ze‐Fan Yao ◽  
Yu‐Qing Zheng ◽  
Jin‐Hu Dou ◽  
Yang Lu ◽  
Yi‐Fan Ding ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electron Mobility ◽  
Conjugated Polymer ◽  
High Electron ◽  
High Electron Mobility ◽  
Polymer Crystals

scholarly journals Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

2021 ◽  
Author(s):  
Yu-Chen Lai ◽  
Yi-Nan Zhong ◽  
Ming-Yan Tsai ◽  
Yue-Ming Hsin
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Gate Capacitance ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Higher Power ◽  
State Capacitance

AbstractThis study investigated the gate capacitance and off-state characteristics of 650-V enhancement-mode p-GaN gate AlGaN/GaN high-electron-mobility transistors after various degrees of gate stress bias. A significant change was observed in the on-state capacitance when the gate stress bias was greater than 6 V. The corresponding threshold voltage exhibited a positive shift at low gate stress and a negative shift when the gate stress was greater than 6 V, which agreed with the shift observation from the I–V measurement. Moreover, the off-state leakage current increased significantly after the gate stress exceeded 6 V during the off-state characterization although the devices could be biased up to 1000 V without breakdown. The increase in the off-state leakage current would lead to higher power loss.

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