Three-Terminal Ovonic Threshold Switch (3T-OTS) with Tunable Threshold Voltage for Versatile Artificial Sensory Neurons

Nano Letters ◽  
2022 ◽  
Author(s):  
Hyejin Lee ◽  
Seong Won Cho ◽  
Seon Jeong Kim ◽  
Jaesang Lee ◽  
Keun Su Kim ◽  
...  
Keyword(s):  
Sensory Neurons ◽  
Threshold Voltage ◽  
Threshold Switch

Pulse Dependent Threshold Voltage Variation of the Ovonic Threshold Switch in Cross-Point Memory

2020 ◽  
Vol 41 (3) ◽  
pp. 373-376
Author(s):  
Sanghyun Ban ◽  
Hyejung Choi ◽  
Wootae Lee ◽  
Seokman Hong ◽  
Hwanjun Zang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Cross Point ◽  
Voltage Variation ◽  
Threshold Switch

Threshold Voltage Drift in Te-Based Ovonic Threshold Switch Devices Under Various Operation Conditions

2020 ◽  
Vol 41 (1) ◽  
pp. 191-194 ◽  
Author(s):  
Jongmyung Yoo ◽  
Ilya Karpov ◽  
Sangmin Lee ◽  
Jaimyun Jung ◽  
Hyoung Seop Kim ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Operation Conditions ◽  
Voltage Drift ◽  
Threshold Switch

Glucuronyl 3-sulfate occurs exclusively on distal unmyelinated terminals of selected sensory neurons in the peripheral nervous system

1995 ◽  
Vol 53 ◽  
pp. 958-959
Author(s):  
S.S. Spicer ◽  
B.A. Schulte
Keyword(s):  
Central Nervous System ◽  
Nervous System ◽  
Cerebral Cortex ◽  
Peripheral Nervous System ◽  
Sensory Neurons ◽  
Sensory Nerves ◽  
Tissue Antigens ◽  
The Central Nervous System ◽  
The Brain ◽  
Leu 7

Generation of monoclonal antibodies (MAbs) against tissue antigens has yielded several (VC1.1, HNK- 1, L2, 4F4 and anti-leu 7) which recognize the unique sugar epitope, glucuronyl 3-sulfate (Glc A3- SO4). In the central nervous system, these MAbs have demonstrated Glc A3-SO4 at the surface of neurons in the cerebral cortex, the cerebellum, the retina and other widespread regions of the brain.Here we describe the distribution of Glc A3-SO4 in the peripheral nervous system as determined by immunostaining with a MAb (VC 1.1) developed against antigen in the cat visual cortex. Outside the central nervous system, immunoreactivity was observed only in peripheral terminals of selected sensory nerves conducting transduction signals for touch, hearing, balance and taste. On the glassy membrane of the sinus hair in murine nasal skin, just deep to the ringwurt, VC 1.1 delineated an intensely stained, plaque-like area (Fig. 1). This previously unrecognized structure of the nasal vibrissae presumably serves as a tactile end organ and to our knowledge is not demonstrable by means other than its selective immunopositivity with VC1.1 and its appearance as a densely fibrillar area in H&E stained sections.

Improvement in Computational Accuracy of Output Transition Time Variation Considering Threshold Voltage Variations

2009 ◽  
Vol E92-A (4) ◽  
pp. 990-997
Author(s):  
Takaaki OKUMURA ◽  
Atsushi KUROKAWA ◽  
Hiroo MASUDA ◽  
Toshiki KANAMOTO ◽  
Masanori HASHIMOTO ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Time Variation ◽  
Transition Time ◽  
Computational Accuracy

Dual Tail Inverter based Comparator Design with Sub Threshold Voltage

2014 ◽  
Vol 3 (2) ◽  
pp. 33-39
Author(s):  
T. Swarna Latha ◽  
◽  
T. Suguna ◽  
Keyword(s):  
Threshold Voltage

Analysis Approach on DMOS Transistor Vth Mismatch Due to Trapped Charges

2015 ◽  
Author(s):  
Hashim Ismail ◽  
Ang Chung Keow ◽  
Kenny Gan Chye Siong
Keyword(s):  
Failure Analysis ◽  
Threshold Voltage ◽  
Gate Oxide ◽  
Analysis Approach ◽  
Test Results ◽  
Root Cause ◽  
Switching Event ◽  
Output Transistor ◽  
Event Based ◽  
Trapped Charge

Abstract An output switching malfunction was reported on a bridge driver IC. The electrical verification testing revealed evidence of an earlier over current condition resulting from an abnormal voltage sense during a switching event. Based on these test results, we developed the hypothesis that a threshold voltage mismatch existed between the sense transistor and the output transistor. This paper describes the failure analysis approach we used to characterize the threshold voltage mismatch as well as our approach to determine the root cause, which was trapped charge on the gate oxide of the sense transistor.

Analysis of an Anomalous CMOS Transistor Exhibiting Drain to Source Leakage—Its Model and Cause

2014 ◽  
Author(s):  
Yuk L. Tsang ◽  
Alex VanVianen ◽  
Xiang D. Wang ◽  
N. David Theodore
Keyword(s):  
Threshold Voltage ◽  
Crystalline Silicon ◽  
Electrical Characterization ◽  
Visual Defect ◽  
Scanning Capacitance Microscopy ◽  
Device Model ◽  
Graphical Simulation ◽  
Cmos Transistor

Abstract In this paper, we report a device model that has successfully described the characteristics of an anomalous CMOS NFET and led to the identification of a non-visual defect. The model was based on detailed electrical characterization of a transistor exhibiting a threshold voltage (Vt) of about 120mv lower than normal and also exhibiting source to drain leakage. Using a simple graphical simulation, we predicted that the anomalous device was a transistor in parallel with a resistor. It was proposed that the resistor was due to a counter doping defect. This was confirmed using Scanning Capacitance Microscopy (SCM). The dopant defect was shown by TEM imaging to be caused by a crystalline silicon dislocation.

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