threshold switch
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Nano Letters ◽  
2022 ◽  
Author(s):  
Hyejin Lee ◽  
Seong Won Cho ◽  
Seon Jeong Kim ◽  
Jaesang Lee ◽  
Keun Su Kim ◽  
...  

2021 ◽  
Vol MA2021-01 (30) ◽  
pp. 1023-1023
Author(s):  
Doo San Kim ◽  
You Jung Gill ◽  
Yun Jong Jang ◽  
Ye Eun Kim ◽  
Geun Young Yeom

2021 ◽  
Vol 118 (21) ◽  
pp. 212103
Author(s):  
Sangmin Lee ◽  
Jangseop Lee ◽  
Myonghoon Kwak ◽  
Oleksandr Mosendz ◽  
Hyunsang Hwang

2021 ◽  
Vol 102 (2) ◽  
pp. 39-43
Author(s):  
Doo San Kim ◽  
You Jung Gill ◽  
Yun Jong Jang ◽  
Ye Eun Kim ◽  
Geun Young Yeom

2021 ◽  
pp. 2100117
Author(s):  
Joon‐Kyu Han ◽  
Mun‐Woo Lee ◽  
Ji‐Man Yu ◽  
Yang‐Kyu Choi

2021 ◽  
Vol 15 ◽  
Author(s):  
Shiqing Zhang ◽  
Hui Xu ◽  
Zhiwei Li ◽  
Sen Liu ◽  
Bing Song ◽  
...  

Ovonic threshold switch (OTS) has received great attention in neuromorphic computing due to its support for high-density synapse array as a selector and leaky-integration-firing functions Hodgkin-Huxley neurons. However, there is no simple and complete model for device simulation and integrated circuit design, which hindered application until now. In this work, we developed a compact physical model of OTS based on the Poole-Frenkel effect accompanied by the thermal dissipation effect for the first time. The thermal dissipation effect describes the energy flow between the device and the environment so that the model is more practical. Compared with previous experiments, the numerical results fairly fitted the electrical characteristics, demonstrating the model validity. In addition, the relation of the device performance with material and structure was deduced, which can facilitate optimizing the OTS device. The model will be useful for device design and implemented with high speed for simplicity.


2021 ◽  
Vol 118 (2) ◽  
pp. 023502
Author(s):  
B. A. Johnson ◽  
K. Brahim ◽  
A. G. Balanov ◽  
S. Savel'ev ◽  
P. Borisov
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