Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses

ABSTRACTResistive memory materials and devices (often called memristors) are an area of intense research, with metal/metal oxide/metal resistive elements a prominent example of such devices. Electroforming (the formation of a conductive filament in the metal oxide layer) represents one of the often necessary steps of resistive memory device fabrication that results in large and poorly controlled variability in device performance. In this contribution we present a numerical investigation of the electroforming process. In our model, drift and Ficks and Soret diffusion processes are responsible for movement of vacancies in the oxide material. Simulations predict filament formation and qualitatively agreed with a reduction of the forming voltage in structures with a top electrode. The forming and switching results of the study are compared with numerical simulations and show a possible pathway toward more repeatable and controllable resistive memory devices.

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Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

Journal of Materials Chemistry C ◽

10.1039/c7tc03481d ◽

2017 ◽

Vol 5 (37) ◽

pp. 9799-9805 ◽

Cited By ~ 16

Author(s):

Guilin Chen ◽

Peng Zhang ◽

Lulu Pan ◽

Lin Qi ◽

Fucheng Yu ◽

...

Keyword(s):

Memory Effect ◽

Resistive Switching ◽

Memory Device ◽

Memory Devices ◽

Resistive Memory ◽

Resistive Switching Memory ◽

Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

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Electrical characterization of resistive memory in metal-Pr0.7Ca0.3MnO3 interface: A future non-volatile memory device

2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS) ◽

10.1109/nvmt.2009.5429779 ◽

2009 ◽

Author(s):

N. Das ◽

Y.Y. Xue ◽

Y.Q. Wang ◽

C.W. Chu

Keyword(s):

Electrical Characterization ◽

Memory Device ◽

Resistive Memory ◽

Non Volatile Memory ◽

Volatile Memory

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A solution processed metal–oxo cluster for rewritable resistive memory devices

Journal of Materials Chemistry C ◽

10.1039/c8tc05188g ◽

2019 ◽

Vol 7 (4) ◽

pp. 843-852 ◽

Cited By ~ 5

Author(s):

Kui Zhou ◽

Guanglong Ding ◽

Chen Zhang ◽

Ziyu Lv ◽

Shenghuang Luo ◽

...

Keyword(s):

Activation Energy ◽

Resistive Switching ◽

Memory Device ◽

Memory Devices ◽

Resistive Memory ◽

Solution Processed ◽

Switching Behaviour

A memory device based on metal–oxo cluster-assembled materials demonstrates a redox-based resistive switching behaviour which is correlated with the migration of hydroxide ions with low activation energy.

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