A solution processed nonvolatile resistive memory device with Ti/CdSe quantum dot/Ti-TiOx/CdSe quantum dot/indium tin-oxide structure

2011 ◽  
Vol 110 (7) ◽  
pp. 074505 ◽  
Author(s):  
V. Kannan ◽  
J. K. Rhee
Keyword(s):  
Quantum Dot ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Memory Device ◽  
Resistive Memory ◽  
Solution Processed ◽  
Oxide Structure ◽  
Cdse Quantum Dot

All solution-processed silver nanowires composite silica nanospheres antireflection structure with synergetic optoelectronic performance

2021 ◽  
Author(s):  
Yuxin Tang ◽  
Wanying Yin ◽  
Yue Huang ◽  
Ganghua Zhang ◽  
Qingbiao Zhao ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Silver Nanowires ◽  
Great Promise ◽  
Silica Nanospheres ◽  
Solution Processed ◽  
Transparent Conductive Films ◽  
Conductive Films

Silver nanowires (AgNWs) network has shown great promise as transparent conductive films (TCFs) due to its excellent optoelectronic performance. In order to replace indium tin oxide (ITO), considerable intricate methods...

Quantum-Dot Surface Emitting Distributed Feedback Lasers Using Indium–Tin–Oxide as Top Claddings

2016 ◽  
Vol 28 (15) ◽  
pp. 1633-1636 ◽  
Author(s):  
Ting-Yuan Chang ◽  
Chien-Hung Pan ◽  
Kuo-Bin Hong ◽  
Chien-Hung Lin ◽  
Gray Lin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Distributed Feedback ◽  
Distributed Feedback Lasers

A solution processed metal–oxo cluster for rewritable resistive memory devices

2019 ◽  
Vol 7 (4) ◽  
pp. 843-852 ◽  
Author(s):  
Kui Zhou ◽  
Guanglong Ding ◽  
Chen Zhang ◽  
Ziyu Lv ◽  
Shenghuang Luo ◽  
...  
Keyword(s):  
Activation Energy ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Solution Processed ◽  
Switching Behaviour

A memory device based on metal–oxo cluster-assembled materials demonstrates a redox-based resistive switching behaviour which is correlated with the migration of hydroxide ions with low activation energy.

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