scholarly journals AuPd Nanoicosahedra: Atomic-Level Surface Modulation for Optimization of Electrocatalytic and Photocatalytic Energy Conversion

2021 ◽  
Vol 4 (3) ◽  
pp. 2652-2662
Author(s):  
Chen-Rui Kao ◽  
Yu-Cheng Huang ◽  
Biva Talukdar ◽  
Yu-Chun Chuang ◽  
Ying-Rui Lu ◽  
...  
2021 ◽  
Author(s):  
Massoud Kaviany

Abstract Heat is stored in quanta of kinetic and potential energies in matter. The temperature represents the equilibrium and exciting occupation (boson) of these energy conditions. Temporal and spatial temperature variations and heat transfer are associated with the kinetics of these equilibrium excitations. During energy-conversion (between electron and phonon systems), the occupancies deviate from equilibria, while holding atomic-scale, inelastic spectral energy transfer kinetics. Heat transfer physics reaches nonequilibrium energy excitations and kinetics among the principal carriers, phonon, electron (and holes and ions), fluid particle, and photon. This allows atomic-level tailoring of energetic materials and energy-conversion processes and their efficiencies. For example, modern thermal-electric harvesters have transformed broad-spectrum, high-entropy heat into a narrow spectrum of low-entropy emissions to efficiently generate thermal electricity. Phonoelectricity, in contrast, intervenes before a low-entropy population of nonequilibrium optical phonons becomes a high-entropy heat. In particular, the suggested phonovoltaic cell generates phonoelectricity by employing the nonequilibrium, low-entropy, and elevated temperature optical-phonon produced population–for example, by relaxing electrons, excited by an electric field. A phonovoltaic material has an ultra-narrow electronic bandgap, such that the hot optical-phonon population can relax by producing electron-hole pairs (and power) instead of multiple acoustic phonons (and entropy). Examples of these quanta and spectral heat transfer are reviewed, contemplating a prospect for education and research in this field.


2016 ◽  
Vol 32 (2) ◽  
pp. 372-381 ◽  
Author(s):  
Alexander T. Hanke ◽  
Marieke E. Klijn ◽  
Peter D. E. M. Verhaert ◽  
Luuk A. M. van der Wielen ◽  
Marcel Ottens ◽  
...  

1999 ◽  
Vol 584 ◽  
Author(s):  
Xiaotao Su ◽  
Rajiv K. Kalia ◽  
Anupam Madhukar ◽  
Aiichiro Nakano ◽  
Priya Vashishta

AbstractLarge-scale molecular dynamics simulations are performed to investigate the atomiclevel stresses on InAs/GaAs mesas. The simulations are based on an interatomic-potential scheme for InAs/GaAs systems which depends on the local chemical composition. Multiresolution techniques are used to speed up the simulations. InAs/GaAs square mesas with { 101 }-type sidewalls are studied. The atomic-level pressure distribution and surface atomic stresses on the sidewalls with 12, 10, 8 and 6 monolayers of InAs overlayers have been calculated.


2007 ◽  
Vol 75 (10) ◽  
Author(s):  
Venkatachalapathy S. K. Balagurusamy ◽  
Reinhard Streitel ◽  
Oleg G. Shpyrko ◽  
P. S. Pershan ◽  
Mati Meron ◽  
...  

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