Ag-Decorated MoSx Laminar-Film Electrocatalyst Made with Simple and Scalable Magnetron Sputtering Technique for Hydrogen Evolution: A Defect Model to Explain the Enhanced Electron Transport

2020 ◽  
Vol 12 (31) ◽  
pp. 35011-35021
Author(s):  
Dong-Hau Kuo ◽  
Hairus Abdullah ◽  
Noto Susanto Gultom ◽  
Jia-Yu Hu

APL Materials ◽  
2020 ◽  
Vol 8 (12) ◽  
pp. 121104
Author(s):  
Jeonghyeon Oh ◽  
Ho Jun Park ◽  
Arindam Bala ◽  
Hee-Soo Kim ◽  
Na Liu ◽  
...  




2020 ◽  
Vol 56 (2) ◽  
pp. 305-308 ◽  
Author(s):  
Jing Li ◽  
Yuanwu Liu ◽  
Chen Liu ◽  
Wentian Huang ◽  
Ying Zhang ◽  
...  

Ultra-high-density ReSe2 nanoflakes with uniform small 2D size were grown on porous carbon cloth by CVD. The 2D/3D construction gave more active catalytic sites, and the small size effect and the interfacial C–Se bonding facilitated electron transport between ReSe2 and PCC.



1986 ◽  
Vol 70 ◽  
Author(s):  
T. Shimizu ◽  
M. Kumeda ◽  
A. Morimoto ◽  
Y. Tsujimura ◽  
I. Kobayashi

ABSTRACTProperties of a-Si1-xGex:H films prepared by magnetron sputtering (MG) and glow discharge decomposition (GD) were compared by means of NMR, ESR, IR and hydrogen-evolution measurements. For MG films, the content of dispersed H is roughly independent of x while the content of clustered H decreases with x. For GD films, both the contents of dispersed and clustered H decrease with x. ESR results reveal that most defects in the films are Ge dangling bonds and that the number of dangling bonds per Ge atom is roughly independent of x for MG films whereas it increases largely with x for GD films. Therefore the content of dispersed H has a good correlation with the number of Ge dangling bonds per Ge atom in a-Si1-xGex:H films. The ratio of the intensity of the IR peak at 2100 cm-1 to that at 2000 cm-1 decreases and increases with x, respectively, for MG and GD films, and the ratio of the intensity of the low temperature H evolution peak to that of the high temperature H evolution peak decreases and increases with x, respectively for MG and GD films.



1995 ◽  
Vol 403 ◽  
Author(s):  
D. G. Stearns ◽  
S. L. Baker ◽  
M. A. Wall

AbstractWe investigate the variation of microstructure and electron transport with layer thickness in Mo/Si multilayer films deposited by magnetron sputtering.



2021 ◽  
Vol 2145 (1) ◽  
pp. 012027
Author(s):  
R Thanimkan ◽  
B Namnuan ◽  
S Chatraphorn

Abstract The requirements of electron transport layer (ETL) for high efficiency Perovskite solar cells (PSCs) are, for example, appropriate band energy alignment, high electron mobility, high optical transmittance, high stability, and easy processing. SnO2 has attracted more attention as ETL for PSCs because it has diverse advantages, e.g., wide bandgap energy, excellent optical and chemical stability, high transparency, high electron mobility, and easy preparation. The SnO2 ETL was fabricated by RF magnetron sputtering technique to ensure the chemical composition and uniform layer thickness when compared to the use of chemical solution via spin-coating method. The RF power was varied from 60 - 150 W. The Ar sputtering gas pressure was varied from 1 × 10−3 - 6 × 10−3 mbar while keeping O2 partial pressure at 1 × 10−4 mbar. The thickness of SnO2 layer decreases as the Ar gas pressure increases resulting in the increase of sheet resistance. The surface morphology and optical transmission of the SnO2 ETL were investigated. It was found that the optimum thickness of SnO2 layer was approximately 35 - 40 nm. The best device shows Jsc = 27.4 mA/cm2, Voc = 1.03 V, fill factor = 0.63, and efficiency = 17.7%.



Author(s):  
Cuncai Lv ◽  
Qianpeng Yang ◽  
Shichen Xu ◽  
Ling Yuan ◽  
Zhipeng Huang ◽  
...  

Binder-free structure is beneficial for effective electron transport in electrocatalysts. Although metallic carbide has been well demonstrated as a kind of efficient electrocatalyst in hydrogen evolution reaction (HER), the binder-free...





2015 ◽  
Vol 40 (6) ◽  
pp. 2452-2459 ◽  
Author(s):  
Xiaoling Zhang ◽  
Joanne Hampshire ◽  
Kevin Cooke ◽  
Xiaohong Li ◽  
Derek Pletcher ◽  
...  


1989 ◽  
Vol 145 ◽  
Author(s):  
Gary Tuttle ◽  
Herbert Kroemer ◽  
John H. English

AbstractWe present data on electron transport in AlSb/InAs/AlSb quantum wells grown by molecular beam epitaxy. Because both anion and cation change across an InAs/Alsb interface, it is possible to grow such wells with two different types of interfaces, one with an InSb-like bond configuration, the other AlAs-like. Electron mobility and concentration were found to depend very strongly on the manner in which the quantum well's interfaces were grown, with high mobilities seen only if the bottom interface is InSb-like. An As-on-Al sites antisite defect model is postulated for bottom AlAs-like interfaces.



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