Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaOx-Based Memory Structures

2020 ◽  
Vol 12 (49) ◽  
pp. 55331-55341
Author(s):  
Aleksandra A. Koroleva ◽  
Anna G. Chernikova ◽  
Anastasia A. Chouprik ◽  
Evgeny S. Gornev ◽  
Aleksandr S. Slavich ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Resistive Switching ◽  
Electrode Surface ◽  
Atomic Layer ◽  
Electrode Surface Morphology ◽  
Memory Structures

scholarly journals Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

Materials ◽  
2018 ◽  
Vol 11 (2) ◽  
pp. 265 ◽  
Author(s):  
Chi-Chang Wu ◽  
Hsin-Chiang You ◽  
Yu-Hsien Lin ◽  
Chia-Jung Yang ◽  
Yu-Ping Hsiao ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Electrode Surface ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Electrode Surface Morphology

Resistive Switching Characteristics in TiO2 ReRAM with Top Electrode of Co Selectively Formed on SAMs Printed Patterns

2007 ◽  
Vol 124-126 ◽  
pp. 603-606
Author(s):  
Sang Hee Won ◽  
Seung Hee Go ◽  
Jae Gab Lee
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Atomic Layer ◽  
High Resistance State ◽  
Resistive Random Access Memory ◽  
Tio2 Thin Films ◽  
Selective Deposition ◽  
Precise Control ◽  
Resistance State ◽  
Switching Characteristics

Simple process for the fabrication of Co/TiO2/Pt resistive random access memory, called ReRAM, has been developed by selective deposition of Co on micro-contact printed (μ-CP) self assembled monolayers (SAMs) patterns. Atomic Layer Deposition (ALD) was used to deposit TiO2 thin films, showing its ability of precise control over the thickness of TiO2, which is crucial to obtain proper resistive switching properties of TiO2 ReRAM. The fabrication process for Co/TiO2/Pt ReRAM involves the ALD of TiO2 on sputter-deposited Pt bottom electrode, followed by μ-CP with SAMs and then selective deposition of Co. This results in the Co/TiO2/Pt structure ReRAM. For comparison, Pt/TiO2/Pt ReRAM was produced and revealing the similar switching characteristics as that of Co/TiO2/Pt, thus indicating the feasibility of Co replacement with Pt top electrode. The ratios between the high-resistance state (Off state) and the low-resistance state (On state) were larger than 102. Consequently, the selective deposition of Co with μ-CP, newly developed in this study, can simplify the process and thus implemented into the fabrication of ReRAM.

scholarly journals Effects of the thickness on resistive switching characteristics of CrOx thin films

2016 ◽  
Vol 19 (2) ◽  
pp. 92-100
Author(s):  
Ngoc Kim Pham ◽  
Thang Bach Phan ◽  
Vinh Cao Tran
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Resistive Switching ◽  
High Reliability ◽  
Switching Behavior ◽  
Ftir Analysis ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Structure Surface ◽  
Switching Characteristics

In this study, we have investigated influences of the thickness on the structure, surface morphology and resistive switching characteristics of CrOx thin films prepared by using DC reactive sputtering technique. The Raman and FTIR analysis revealed that multiphases including Cr2O3, CrO2, Cr8O21... phases coexist in the microstructure of CrOx film. It is noticed that the amount of stoichiometric Cr2O3 phase increased significantly as well as the surface morphology were more visible with less voids and more densed particles with larger thickness films. The Ag/CrOx/FTO devices exhibited bipolar resistive switching behavior and high reliability. The resistive switching ratio has decreased slightly with the thickness increments and was best achieved at CrOx – 100 nm devices.

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