Enhancement of Memory Properties of Pentacene Field-Effect Transistor by the Reconstruction of an Inner Vertical Electric Field with an n-Type Semiconductor Interlayer

2021 ◽  
Author(s):  
Yiru Wang ◽  
Limin Kang ◽  
Zhenliang Liu ◽  
Zuteng Wan ◽  
Jiang Yin ◽  
...  
Keyword(s):  
Electric Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Vertical Electric Field ◽  
Type Semiconductor ◽  
Effect Transistor

Partial Dissolution of Charge Order Phase Observed in -(BEDT-TTF)2PF6 Single Crystal Field Effect Transistor

2016 ◽  
Vol 16 (4) ◽  
pp. 3267-3272
Author(s):  
Masatoshi Sakai ◽  
Norifumi Moritoshi ◽  
Shigekazu Kuniyoshi ◽  
Hiroshi Yamauchi ◽  
Kazuhiro Kudo ◽  
...  
Keyword(s):  
Electric Field ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Conductance ◽  
Charge Order ◽  
Crystal Field Effect ◽  
Effect Transistor

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.

MRS 2001 (Boston): Design and Quantification of a Nanoscale Field Effect Transistor: Distributed Response Analysis for Investigating Conductive Behaviour.

2001 ◽  
Vol 706 ◽  
Author(s):  
Marc in het Panhuis ◽  
Jonathan N. Coleman ◽  
Paul. A. Popelier ◽  
Brian Foley ◽  
Robert W. Munn ◽  
...  
Keyword(s):  
Electric Field ◽  
Ab Initio ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Chem Phys ◽  
Computational Approach ◽  
Response Analysis ◽  
Switching Element ◽  
Molecular Switching ◽  
Effect Transistor

AbstractA new design for a field effect transistor able to push back the physical limits of Moore's Law is described. An ab initio computational approach is presented that can be further developed to characterize the ON/OFF states of such a device. Distributed response analysis (M. in het Panhuis, P.L.A. Popelier, R.W. Munn, J.G. Ágyán (2001), J. Chem. Phys. 114, 7951-7961) is employed to investigate conductive behavior. The method demonstrates that in analogy to conduction an electron can move across a possible conjugated molecular switching element (para-nitroaniline) in an electric field.

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