Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells

2021 ◽  
Vol 13 (6) ◽  
pp. 7476-7484
Author(s):  
Julita Smalc-Koziorowska ◽  
Ewa Grzanka ◽  
Artur Lachowski ◽  
Roman Hrytsak ◽  
Mikolaj Grabowski ◽  
...  
Keyword(s):  
Thermal Degradation ◽  
Quantum Wells ◽  
Metal Vacancies ◽  
Ingan Quantum Wells

Role of band potential roughness on the luminescence properties of InGaN quantum wells grown by MBE on bulk GaN substrates

2006 ◽  
Vol 243 (7) ◽  
pp. 1614-1618 ◽  
Author(s):  
A. Žukauskas ◽  
K. Kazlauskas ◽  
G. Tamulaitis ◽  
P. Pobedinskas ◽  
S. Juršėnas ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Luminescence Properties ◽  
Bulk Gan ◽  
Ingan Quantum Wells

Thermal degradation in InGaN quantum wells in violet and blue GaN-based laser diodes

2011 ◽  
Vol 11 (4) ◽  
pp. S167-S170 ◽  
Author(s):  
Jihoon Kim ◽  
Hyunsoo Kim ◽  
Sung-Nam Lee
Keyword(s):  
Thermal Degradation ◽  
Quantum Wells ◽  
Laser Diodes ◽  
Ingan Quantum Wells

The role of dislocations as nonradiative recombination centers in InGaN quantum wells

2008 ◽  
Vol 92 (9) ◽  
pp. 091901 ◽  
Author(s):  
Josh Abell ◽  
T. D. Moustakas
Keyword(s):  
Quantum Wells ◽  
Nonradiative Recombination ◽  
Recombination Centers ◽  
Ingan Quantum Wells

scholarly journals The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mikolaj Grabowski ◽  
Ewa Grzanka ◽  
Szymon Grzanka ◽  
Artur Lachowski ◽  
Julita Smalc-Koziorowska ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Temperatures ◽  
Point Defects ◽  
X Ray Diffraction ◽  
Helium Ions ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
The Impact ◽  
Ingan Quantum Wells

AbstractThe aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice. The InGaN QWs were almost identical to those grown on unimplanted GaN substrates. In the next step of the experiment, we annealed samples grown on unimplanted and implanted GaN at temperatures of 900 °C, 920 °C and 940 °C for half an hour. The samples were examined using Photoluminescence, X-ray Diffraction and Transmission Electron Microscopy. We found out that the decomposition of InGaN QWs started at lower temperatures for the samples grown on the implanted GaN substrates what provides a strong experimental support that point defects play important role in InGaN decomposition at high temperatures.

scholarly journals Role of dislocations in nitride laser diodes with different indium content

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Agata Bojarska-Cieślińska ◽  
Łucja Marona ◽  
Julita Smalc-Koziorowska ◽  
Szymon Grzanka ◽  
Jan Weyher ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Defect Density ◽  
Laser Diodes ◽  
Diffusion Path ◽  
Vapour Phase ◽  
Indium Content ◽  
Nonradiative Recombination ◽  
Light Emitters ◽  
Vapour Phase Epitaxy

AbstractIn this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial process. All structures were produced by metalorganic vapour phase epitaxy and emit light in the range 383–477 nm. We observe that intensity of electroluminescence is strong in the whole spectral region for devices grown on GaN, but decreases rapidly for the devices on sapphire and emitting at wavelength shorter than 420 nm. We interpret this behaviour in terms of increasing importance of dislocation related nonradiative recombination for low indium content structures. Our studies show that edge dislocations are the main source of nonradiative recombination. We observe that long wavelength emitting structures are characterized by higher average light intensity in cathodoluminescence and better thermal stability. These findings indicate that diffusion path of carriers in these samples is shorter, limiting the amount of carriers reaching nonradiative recombination centers. According to TEM images only mixed dislocations open into the V-pits, usually above the multi quantum wells thus not influencing directly the emission.

Structural comparisons of pyrodextrins during thermal degradation process: The role of hydrochloric acid

2021 ◽  
Vol 349 ◽  
pp. 129174
Author(s):  
Huijia Mao ◽  
Zhijun Chen ◽  
Jie Li ◽  
Xueyang Zhai ◽  
Hongyan Li ◽  
...  
Keyword(s):  
Hydrochloric Acid ◽  
Thermal Degradation ◽  
Degradation Process ◽  
Thermal Degradation Process

Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes

2021 ◽  
Vol 118 (18) ◽  
pp. 182102
Author(s):  
Xiaoyu Zhao ◽  
Bin Tang ◽  
Liyan Gong ◽  
Junchun Bai ◽  
Jiafeng Ping ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Yellow Light ◽  
Light Emitting ◽  
Rational Construction ◽  
Ingan Quantum Wells

Directly correlated microscopy of trench defects in InGaN quantum wells

2021 ◽  
pp. 113255
Author(s):  
T.J. O'Hanlon ◽  
F C-P. Massabuau ◽  
A. Bao ◽  
M.J. Kappers ◽  
R.A. Oliver
Keyword(s):  
Quantum Wells ◽  
Ingan Quantum Wells ◽  
Correlated Microscopy

Strain-induced indium clustering in non-polar a-plane InGaN quantum wells

2018 ◽  
Vol 145 ◽  
pp. 109-122 ◽  
Author(s):  
Ja Kyung Lee ◽  
Bumsu Park ◽  
Kyung Song ◽  
Woo Young Jung ◽  
Dmitry Tyutyunnikov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ingan Quantum Wells

Role of the spin–orbit interaction in elastic scattering of electrons in quantum wells

2003 ◽  
Vol 34 (5-8) ◽  
pp. 687-690
Author(s):  
H.C. Huang ◽  
O. Voskoboynikov ◽  
C.P. Lee
Keyword(s):  
Elastic Scattering ◽  
Quantum Wells ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction
Sign in / Sign up

Export Citation Format

Share Document