Degradation of organic field-effect transistors made of pentacene

2004 ◽  
Vol 19 (7) ◽  
pp. 1999-2002 ◽  
Author(s):  
Ch. Pannemann ◽  
T. Diekmann ◽  
U. Hilleringmann
Keyword(s):  
Charge Carrier ◽  
Threshold Voltage ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Ambient Air ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Semiconducting Material

This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert p-type silicon wafers as the substrate and SiO2 as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.

Influence of the Contact Thickness on Electrical Performance of Staggered and Planer p-Channel Organic Field Effect Transistors

2012 ◽  
Vol 622-623 ◽  
pp. 1434-1438 ◽  
Author(s):  
Brijesh Kumar ◽  
B.K. Kaushik ◽  
Y.S. Negi
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Performance ◽  
Thickness Variation ◽  
Organic Field Effect Transistors ◽  
Field Effect Mobility ◽  
Effect Transistor ◽  
Current Value ◽  
Good Agreement

The influence of contact thickness on electrical performance of bottom gate Organic Field Effect Transistor (BG-OFET) with staggered and planer structures is studied in this paper. Two dimensional device simulation is performed with identical dimensions for both devices which show a good agreement between simulated and measured results. Contact thickness is varied from 0nm to 20nm for planer and staggered structures. The electrical characteristics are strongly affected by the contact thickness variation. With increasing contact thickness, the threshold voltage shifts from negative to positive. The simulation results indicate that saturation current value of staggered structure is higher than that of planer. Although the current does not increase in staggered structure due to its increasing contact thickness, while the current in planer structure increases up to three times. However, current in planer is still below the current in staggered structure. The extracted field effect mobility and current on-off ratio at 20nm electrode thickness for staggered structure is 0.67 cm2/V.s and 108, respectively. It has been observed that the field effect mobility, threshold voltage, sub-threshold slope, transconductance and current on-off ratio can be modified by varying contact thickness. Analysis of the results clearly demonstrates the significance of controlling the contact thickness in planer and staggered OFETs. It even offers a way to control OFETs parameters.

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

Effect of High Temperature Forming Gas Annealing on Electrical Properties of 4H-SiC Lateral MOSFETs with Lanthanum Silicate and ALD SiO2 Gate Dielectric

2018 ◽  
Vol 924 ◽  
pp. 482-485
Author(s):  
Min Seok Kang ◽  
Kevin Lawless ◽  
Bong Mook Lee ◽  
Veena Misra
Keyword(s):  
Threshold Voltage ◽  
Interfacial Layer ◽  
Field Effect ◽  
Lanthanum Oxide ◽  
Gate Dielectric ◽  
High Mobility ◽  
High Threshold ◽  
Field Effect Mobility ◽  
The Impact ◽  
Lanthanum Silicate

We investigated the impact of an initial lanthanum oxide (La2O3) thickness and forming gas annealing (FGA) conditions on the MOSFET performance. The FGA has been shown to dramatically improve the threshold voltage (VT) stability of 4H-SiC MOSFETs. The FGA process leads to low VTshift and high field effect mobility due to reduction of the interface states density as well as traps by passivating the dangling bonds and active traps in the Lanthanum Silicate dielectrics. By optimizing the La2O3interfacial layer thickness and FGA condition, SiC MOSFETs with high threshold voltage and high mobility while maintaining minimal VTshift are realized.

scholarly journals Channel length-dependent characterisations of organic thin-film transistors with solution processable gadolinium phthalocyanine derivatives

2019 ◽  
Vol 31 (1) ◽  
pp. 265-273 ◽  
Author(s):  
Seema Barard ◽  
Debdyuti Mukherjee ◽  
Sujoy Sarkar ◽  
T. Kreouzis ◽  
I. Chambrier ◽  
...  
Keyword(s):  
Field Effect ◽  
Liquid Crystalline ◽  
Field Effect Transistors ◽  
Channel Length ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Active Layers ◽  
Order Of Magnitude ◽  
Scaling Down ◽  
Voltage Swing

AbstractSpin-coated 52-nm-thick films of newly synthesised gadolinium liquid crystalline bisphthalocyanine sandwich (GdPc2) complexes with octyl chains non-peripheral positions have been successfully employed as active layers for bottom-gate organic field effect transistors having both short $$(5\,\upmu {\text{m}})$$(5μm) and long $$( 20\,\upmu {\text{m}})$$(20μm) channels. The scaling down of the channel length $$( L )$$(L) decreases the field effect mobility due to the increase in the contact resistance between the gold electrodes and the GdPc2 semiconducting layer. Values of on–off ratio and sub-threshold voltage swing are higher nearly one order of magnitude for $$L = 5 \,\upmu{\text{ m}}$$L=5μm than those for $$L = 20\;\upmu m$$L=20μm.

Sign in / Sign up

Export Citation Format

Share Document