Multifunctional Oxygen Scavenger Layer for High-Performance Oxide Thin-Film Transistors with Low-Temperature Processing

2021 ◽  
Author(s):  
Min Seong Kim ◽  
Hyung Tae Kim ◽  
Hyukjoon Yoo ◽  
Dong Hyun Choi ◽  
Jeong Woo Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Oxygen Scavenger ◽  
Low Temperature Processing

Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

2010 ◽  
Vol 10 (1) ◽  
pp. 45-50 ◽  
Author(s):  
K. K. Banger ◽  
Y. Yamashita ◽  
K. Mori ◽  
R. L. Peterson ◽  
T. Leedham ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film ◽  
On Chip

Solution-processed indium-free ZnO/SnO2 bilayer heterostructures as a low-temperature route to high-performance metal oxide thin-film transistors with excellent stabilities

2016 ◽  
Vol 4 (47) ◽  
pp. 11298-11304 ◽  
Author(s):  
Sooji Nam ◽  
Jong-Heon Yang ◽  
Sung Haeng Cho ◽  
Ji Hun Choi ◽  
Oh-Sang Kwon ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film

The ZnO/SnO2 bilayer TFTs exhibited outstanding electron mobilities and excellent electrical stabilities against a variety of bias stresses.

Facile patterning of amorphous indium oxide thin films based on a gel-like aqueous precursor for low-temperature, high performance thin-film transistors

2016 ◽  
Vol 4 (10) ◽  
pp. 2072-2078 ◽  
Author(s):  
Yuzhi Li ◽  
Linfeng Lan ◽  
Peng Xiao ◽  
Zhenguo Lin ◽  
Sheng Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Oxide Thin Films ◽  
Indium Oxide Thin Film

Facile patterning of chloride-based precursor films for low-temperature, high performance indium oxide thin-film transistors.

Fabrication of high-performance, low-temperature solution processed amorphous indium oxide thin-film transistors using a volatile nitrate precursor

2015 ◽  
Vol 3 (4) ◽  
pp. 854-860 ◽  
Author(s):  
Chang-Ho Choi ◽  
Seung-Yeol Han ◽  
Yu-Wei Su ◽  
Zhen Fang ◽  
Liang-Yu Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Annealing Temperatures ◽  
Nitrate Precursor ◽  
Temperature Solution ◽  
Indium Oxide Thin Film

In this study, we fabricate amorphous indium oxide thin film transistors (TFTs) on a display glass substrate at various annealing temperatures from 200 °C to 300 °C.

Low temperature processing of Al2O3-GPTMS-PMMA hybrid films with applications to high-performance ZnO thin-film transistors

2019 ◽  
Vol 467-468 ◽  
pp. 456-461 ◽  
Author(s):  
J. Meza-Arroyo ◽  
M.G. Syamala Rao ◽  
I. Mejia ◽  
M.A. Quevedo- López ◽  
R. Ramírez-Bon
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Zno Thin Film ◽  
Hybrid Films ◽  
Low Temperature Processing
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