Nanoscale-Patterned Cr Films by Selective Etching Using a Heat-Mode Resist: Implications for X-ray Beam Splitter

A novel fabrication process was proposed to produce high-quality Bragg beam splitters for hard X-ray free-electron lasers (XFELs), which should consist of thin, bend-free, and robust Bragg-case crystals without any defects. A combination of a mechanical process and plasma chemical vaporization machining was employed. High crystalline perfection of the fabricated Si(110) crystal was verified with X-ray topography and rocking curve measurements. In addition, the thickness was evaluated to be 4.4 μm from the fringe period of the measured rocking curve. The crystal can be employed in Bragg beam splitters using the (220) Bragg reflection for X-ray pump-X-ray probe experiments with XFEL sources.

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Investigation on the properties of a laminar grating as a soft x-ray beam splitter

Applied Optics ◽

10.1364/ao.49.004450 ◽

2010 ◽

Vol 49 (23) ◽

pp. 4450 ◽

Cited By ~ 2

Author(s):

Ying Liu ◽

Hans-Jörg Fuchs ◽

Zhengkun Liu ◽

Huoyao Chen ◽

Shengnan He ◽

...

Keyword(s):

Beam Splitter ◽

X Ray

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X-RAY CRYSTALLOGRAPHY: Beam Splitter Teases Out Phase Secrets

Science ◽

10.1126/science.280.5365.828a ◽

1998 ◽

Vol 280 (5365) ◽

pp. 828a-828

Author(s):

R. F. Service

Keyword(s):

Beam Splitter ◽

X Ray ◽

X Ray Crystallography

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Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates

Materials Science Forum ◽

10.4028/www.scientific.net/msf.645-648.311 ◽

2010 ◽

Vol 645-648 ◽

pp. 311-314 ◽

Cited By ~ 3

Author(s):

Masakazu Katsuno ◽

Noboru Ohtani ◽

Masashi Nakabayashi ◽

Tatsuo Fujimoto ◽

Hirokatsu Yashiro ◽

...

Keyword(s):

Structural Analysis ◽

Basal Plane ◽

Selective Etching ◽

Vapor Transport ◽

Physical Vapor Transport ◽

High Concentration ◽

X Ray ◽

Nitrogen Doped ◽

Low Resistivity

Dislocations in highly nitrogen-doped (N > 1×1019 cm-3) low-resistivity ( < 10 mcm) 4H-SiC substrates were investigated by photoluminescence imaging, synchrotron X-ray topography, and defect selective etching using molten KOH. The behavior of dislocations is discussed particularly in terms of their glide motion in the presence of a high concentration of nitrogen. The results indicate that nitrogen impurities up to mid 1019 cm-3 concentration do not show any discernible influence on the glide behavior of basal plane dislocations (BPDs) in 4H-SiC crystals grown by physical vapor transport (PVT) method.

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Estimation of observation possibility of the x-ray interferometer with an x-ray beam-splitter

10.1117/12.2055305 ◽

2014 ◽

Author(s):

S. Kitamoto ◽

S. Ogawa ◽

T. Komatsu ◽

R. Umezu ◽

J. Sugimoto ◽

...

Keyword(s):

Beam Splitter ◽

X Ray

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Study of XUV beam splitter flatness for use on a Michelson interferometer

Laser and Particle Beams ◽

10.1017/s0263034604223114 ◽

2004 ◽

Vol 22 (3) ◽

pp. 279-284 ◽

Cited By ~ 9

Author(s):

ANNE-SOPHIE MORLENS ◽

PHILIPPE ZEITOUN ◽

LAURENT VANBOSTAL ◽

PASCAL MERCERE ◽

GRÉGORY FAIVRE ◽

...

Keyword(s):

Beam Splitter ◽

Ion Beam ◽

Michelson Interferometer ◽

Fourier Transform Spectrometer ◽

Ion Beam Sputtering ◽

X Ray ◽

Interference Fringes ◽

Beam Sputtering ◽

20 Nm ◽

Better Than

A XUV Michelson interferometer has been developed by LIXAM/CEA/LCFIO and has been tested as a Fourier-transform spectrometer for measurement of X-ray laser line shape. The observed strong deformation of the interference fringes limited the interest of such an interferometer for plasma probing. Because the fringe deformation was coming from a distortion of the beam splitter (5 × 5 mm2open aperture, about 150 nm thick), several parameters of the multilayer deposition used for the beam splitter fabrication have been recently optimized. The flatness has been improved from 80 nm rms obtained by using the ion beam sputtering technique, to 20 nm rms by using the magnetron sputtering technique. Over 3 × 3 mm2, the beam splitter has a flatness better than 4 nm rms.

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Defect-Selective Etching of Icosahedral Boron Arsenide (B12As2) Crystals in Molten Potassium Hydroxide

MRS Proceedings ◽

10.1557/opl.2011.504 ◽

2011 ◽

Vol 1307 ◽

Author(s):

C.E. Whiteley ◽

A. Mayo ◽

J.H. Edgar ◽

M. Dudley ◽

Y. Zhang

Keyword(s):

Potassium Hydroxide ◽

High Energy ◽

Selective Etching ◽

Etch Pits ◽

X Ray ◽

Etch Pit ◽

Dislocation Densities ◽

Boron Arsenide ◽

Defect Densities ◽

Molten Nickel

ABSTRACTThe present work reports on the defect-selective etching (DSE) for estimating dislocation densities in icosahedral boron arsenide (B12As2) crystals using molten potassium hydroxide (KOH). DSE takes advantage of the greater reactivity of high-energy sites surrounding a dislocation, compared to the surrounding dislocation-free regions. The etch pits per area are indicative of the defect densities in the crystals, as confirmed by x-ray topography (XRT). Etch pit densities were determined for icosahedral boron arsenide crystals produced from a molten nickel flux as a function of etch time (1-5 minutes) and temperature (400-700°C). The etch pits were predominately triangle shaped, and ranged in size from 5-25μm. The average etch pit density of the triangle and oval etch-pits was on the order of 5x107cm-2 and 3x106cm-2 (respectively), for crystals that were etched for two minutes at 550°C.

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SINGLE PASS CLEAVING OF ULTRAFAST LASER MODIFIED C-SHAPED GLASS EDGES

10.31224/osf.io/jrq3c ◽

2021 ◽

Author(s):

Daniel Flamm ◽

Myriam Kaiser ◽

Jonas Kleiner ◽

Tim Hesse

Keyword(s):

Beam Splitter ◽

Selective Etching ◽

Ultrafast Laser ◽

Full Thickness ◽

Single Pass ◽

Optical Head ◽

Single Side ◽

Transparent Materials ◽

Shaped Glass ◽

Edge Contours

We report on single-pass laser cleaving of transparent materials with C-shaped edges that exhibit 45-deg tangential angles to the surface. A holographic 3D beam splitter distributes several foci along the desired edge contours, including C-shaped edges. Single-pass, full thickness laser modifications are achieved requiring single-side access to the workpiece only without inclining the optical head. After having induced laser modifications with feed rates in the order of 100 mm/s actual separation is performed using a selective etching strategy.

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