Ohmic Contact to Two-Dimensional Nanofabricated Silicon Structures with a Two-Probe Scanning Tunneling Microscope

ACS Nano ◽  
2021 ◽  
Author(s):  
Jo Onoda ◽  
Ali Khademi ◽  
Robert A. Wolkow ◽  
Jason Pitters
1996 ◽  
Vol 4 (2) ◽  
pp. 3-4
Author(s):  
Stephen W. Carmichael

The process of ultra-miniaturization has been termed nanofabrication. It looks like the scanning tunneling microscope (STU) and related microscopes will be players in this technology of the future. One of the most recent contributions has been the demonstration that single molecules can be “pushed” across a surface with the STM. This remarkable achievement was demonstrated by Thomas Jung, Reto Schlittler, and James Gimzewski of the IBM Zurich Research Laboratory and Hao Tang and Christian Joachim of the National Center for Scientific Research in Toulouse, They were able to position intact individual molecules on a two-dimensional surface at room temperature by a controlled “pushing” action of the tip of a STM. Similar positioning feats have been done at low temperatures while thermal motion is limited.


1985 ◽  
Vol 56 (11) ◽  
pp. 2168-2170 ◽  
Author(s):  
H. Jonathon Mamin ◽  
David W. Abraham ◽  
Eric Ganz ◽  
John Clarke

2017 ◽  
Vol 19 (46) ◽  
pp. 31284-31289 ◽  
Author(s):  
Siqi Zhang ◽  
Yanfang Geng ◽  
Yuanpeng Fan ◽  
Wubiao Duan ◽  
Ke Deng ◽  
...  

The self-assembly of a series of cyclic oligo(phenylene-ethynylene) (OPE) molecules and their triangular Pt(ii) diimine complexes were studied using scanning tunneling microscope (STM).


1999 ◽  
Vol 583 ◽  
Author(s):  
M. Kästner ◽  
B. Voigtländer

AbstractWe use a scanning tunneling microscope (STM) capable of imaging the growing layer at high temperature during molecular beam epitaxy (MBE) to study the epitaxial growth of Germanium on Silicon and the decay of Ge islands. The periodicity of the (2×N) reconstruction of two-dimensional Ge layers on Si(001) is measured as function of the Ge coverage. Strain energy drives the formation of the (2×N) reconstruction and Si/Ge intermixing. A comparison to total energy calculations predicting the periodicity of the (2×N) reconstruction is used to estimate the amount of Si-Ge intermixing near the surface. The evolution of the size and shape of individual “hut clusters” is measured and explained by kinetically self-limiting growth. The relaxation of kinetically a determined morphology towards equilibrium is followed for a Ge layer on Si(111). Strained two-dimensional as well as partially relaxed three-dimensional islands dissolve and are soaked up by larger three-dimensional islands which are dislocated and therefore fully relaxed.


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