scholarly journals Wide Angle Dynamically Tunable Enhanced Infrared Absorption on Large-Area Nanopatterned Graphene

ACS Nano ◽  
2018 ◽  
Vol 13 (1) ◽  
pp. 421-428 ◽  
Author(s):  
Alireza Safaei ◽  
Sayan Chandra ◽  
Michael N. Leuenberger ◽  
Debashis Chanda
1998 ◽  
Vol 39 (2) ◽  
pp. 83-88 ◽  
Author(s):  
D.J Leahy ◽  
J.M Mooney ◽  
M.N Alexander ◽  
M.M Chi ◽  
S Mil'shtein

1988 ◽  
Vol 140 ◽  
pp. 106-110
Author(s):  
A Weidick

New wide-angle vertical aerial photography covering most of West and East Greenland were flown in the years 1981 and 1985 by Mark Hurd Corp., Minneapolis, Minnesota, for the Geodetic Institute, Copenhagen. The photographs are on a scale of approximately 1:150 000,so that single photographs cover a large area, and are valuable as bench marks for glacier changes. These photographs have been used for updating information on West Greenland glacier changes and the history of West Greenland glacier surges. Those covering East Greenland have been used for location of importantcentres of surging glaciers.


Nanophotonics ◽  
2020 ◽  
Vol 9 (15) ◽  
pp. 4589-4600
Author(s):  
Majid Aalizadeh ◽  
Andriy E. Serebryannikov ◽  
Ekmel Ozbay ◽  
Guy A. E. Vandenbosch

AbstractDeflection, a basic functionality of wavefront manipulation is usually associated with the phase-gradient metasurfaces and the classical blazed gratings. We numerically and experimentally demonstrate an unusually wideband and simultaneously wide-angle deflection achieved at near-infrared in reflection mode for a periodic (nongradient), ultrathin meta-array comprising only one silicon nanorod (Mie resonator) per period. It occurs in the range where only the first negative diffraction order and zero order may propagate. Deflection serves as the enabler for multifunctional operation. Being designed with the main goal to obtain ultra-wideband and wide-angle deflection, the proposed meta-array is also capable in spatial filtering and wide-angle splitting. Spatial filtering of various types can be obtained in one structure by exploiting either deflection in nonzero diffraction orders, or the specular-reflection (zero-order) regime. Thus, the role of different diffraction orders is clarified. Moreover, on–off switching of deflection and related functionalities is possible by changing polarization state of the incident wave. The suggested device is simple to fabricate and only requires cost-effective materials, so it is particularly appropriate for the large-area fabrication using nanoprint lithography. Ultra-wideband wide-angle and other deflection scenarios, along with the other functionalities, are promising for applications in optical communications, laser optics, sensing, detection, and imaging.


2011 ◽  
Vol 20 (03) ◽  
pp. 697-706 ◽  
Author(s):  
NATHANIEL S. SAFRON ◽  
MICHAEL S. ARNOLD

We have recently reported on the synthesis and characterization of a new form of nanostructured graphene that we call "nanoperforated graphene". Nanoperforated graphene is fabricated by etching a periodic array of nanoscale holes into atomic membranes of graphene to create an ultrathin superlattice-like structure. Nanoperforated graphene demonstrates semiconductor-like behavior and we have realized room-temperature field-induced conductance modulation as high as 450 (compared with < 10 for unpatterned graphene) with field-effect mobilities of ~ 1 cm2V-1s-1. Here, we discuss the conduction mechanisms in nanoperforated graphene and the relevance of this new material for field-effect transistor devices. In nanoperforated graphene with 15 nm nanoconstrictions, we observe that the low-bias mobility is independent of temperature, consistent with elastic scattering-limited conduction. At low temperatures, a transport gap limits conduction in the sub-threshold regime and affects the threshold voltage for band conduction. We show that the high-bias electrical characteristics of nanoperforated graphene are similar to "artificial solids," a class of materials made of 2D arrays of Coulomb islands, consistent with observed Coulomb Blockade features in the sub-threshold regime. Currently, the device characteristics of the nanopatterned graphene material are found to be suitable for large-area, thin-film transistor applications. Future higher-performance applications are expected.


Nano Research ◽  
2014 ◽  
Vol 7 (5) ◽  
pp. 743-754 ◽  
Author(s):  
Alberto Cagliani ◽  
David Micheal Angus Mackenzie ◽  
Lisa Katharina Tschammer ◽  
Filippo Pizzocchero ◽  
Kristoffer Almdal ◽  
...  

2011 ◽  
Vol 84 (7) ◽  
Author(s):  
Chihhui Wu ◽  
Burton Neuner ◽  
Gennady Shvets ◽  
Jeremy John ◽  
Andrew Milder ◽  
...  

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