Crystal Orientation-Dependent Oxidation of Epitaxial TiN Films with Tunable Plasmonics

CVD TiN films offer promise as a barrier to Al deposition as a result of the improved conformai step coverage of this film in 0.25 μm contact holes. As an underlayer, the TiN performs a secondary role by improving electromigration (EM) resistance. This is a result of the crystal orientation of the TiN film and its influence on the orientation of the subsequent Al layer. A <111>Al orientation shows improved EM resistance; however, CVD TiN has a preferred <200> orientation as opposed to a <111>PVD TiN orientation.In this study, two parts were investigated: 1) obtain a qualified PVD Al film on a CVD <200> TiN barrier in terms of sheet resistance and reflectivity utilizing MRC's Eclipse™ Mark II PVD system; 2) examine the texture of the Al film utilizing Philips XL30 SEM equipped with EDAX-DX4 EDS system and Electron Back Scatter Pattern (EBSP) system.

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Morphology and Texture of Chemical-Vapour-Deposited TiN Films

MRS Proceedings ◽

10.1557/proc-472-221 ◽

1997 ◽

Vol 472 ◽

Author(s):

Noboru Yoshikawa ◽

Shoji Taniguchi ◽

Atsushi Kikuchi

Keyword(s):

Crystal Orientation ◽

Chemical Vapour ◽

Deposition Process ◽

Grain Structure ◽

Similar Time ◽

Tin Films ◽

Grain Structures ◽

Structure Morphology ◽

Columnar Grains ◽

Zone Ii

ABSTRACTTiN films were obtained by Chemical Vapour Depositon (CVD) under different deposition conditions. Their grain structure, morphology and preferred crystal orientation were investigated. It was observed that well-defined columnar grams developed under conditions of atmospheric thermal CVD, giving rise to strong preferred orientations. In this study, grain structures of CVD-TiN films were classified with respect to the substrate temperature. Films of zone I structure were obtained at 1173K (0.35Tm), and those of zone II were obtained at 1223K (0.38Tm). Crystal shape of the zone II columnar grains was influenced by the partial pressure of TiCl4 (PTiCl4), and the crystal orientation of films was related to the crystal shapes. Columnar grains increased their thickness during deposition process under conditions of low PTiC14 and high temperature (>1250K). The increase rate of grain size had a similar time dependence to that of normal grain growth. The “quadrangular-shaped” and “star-shaped” columnar crystals were formed. They consisted of several crystals and contained twins. Their microstructures were observed in relation to their crystallographic features.

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Material Properties of Coherent Tin Films

MRS Proceedings ◽

10.1557/proc-391-217 ◽

1995 ◽

Vol 391 ◽

Author(s):

Ken Ngan

Keyword(s):

Grain Size ◽

Hydrogen Content ◽

Material Properties ◽

Crystal Orientation ◽

Lattice Spacing ◽

Low Pressure ◽

Atomic Composition ◽

Tin Films ◽

Stress Lattice ◽

Analytical Tools

AbstractIn this paper, material properties of low pressure, metallic mode Coherent TiN and poison mode Coherent TiN have been examined. The material properties include resistivity, crystal orientation, stress, lattice spacing, density, texture, atomic composition, bonding, roughness, hydrogen content, and grain size. Various analytical tools have been used to analyze the TiN films.

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Spherulitic crystal growth in the prodissoconch larval of Crassostrea virginica

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100076263 ◽

1983 ◽

Vol 41 ◽

pp. 518-519

Author(s):

George G. Cocks ◽

Louis Leibovitz ◽

DoSuk D. Lee

Keyword(s):

Crystal Structure ◽

Crassostrea Virginica ◽

Crystal Orientation ◽

Developmental Changes ◽

Gastrula Stage ◽

Orthorhombic Crystal ◽

Orthorhombic Crystal Structure ◽

Stages Of Growth ◽

Early Stages ◽

Initial Deposition

Our understanding of the structure and the formation of inorganic minerals in the bivalve shells has been considerably advanced by the use of electron microscope. However, very little is known about the ultrastructure of valves in the larval stage of the oysters. The present study examines the developmental changes which occur between the time of conception to the early stages of Dissoconch in the Crassostrea virginica(Gmelin), focusing on the initial deposition of inorganic crystals by the oysters.The spawning was induced by elevating the temperature of the seawater where the adult oysters were conditioned. The eggs and sperm were collected separately, then immediately mixed for the fertilizations to occur. Fertilized animals were kept in the incubator where various stages of development were stopped and observed. The detailed analysis of the early stages of growth showed that CaCO3 crystals(aragonite), with orthorhombic crystal structure, are deposited as early as gastrula stage(Figuresla-b). The next stage in development, the prodissoconch, revealed that the crystal orientation is in the form of spherulites.

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The Interpretation of Crystal Lattice Images

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010009600x ◽

1972 ◽

Vol 30 ◽

pp. 550-551

Author(s):

J. M. Cowley ◽

Sumio Iijima

Keyword(s):

Crystal Orientation ◽

Diffraction Theory ◽

Phase Changes ◽

Electron Wave ◽

Crystal Lattices ◽

Heavy Atoms ◽

Lattice Images ◽

The Right ◽

Intuitive Interpretation ◽

Suitable Approximation

The imaging of detailed structures of crystal lattices with 3 to 4Å resolution, given the correct conditions of microscope defocus and crystal orientation and thickness, has been used by Iijima (this conference) for the study of new types of crystal structures and the defects in known structures associated with fluctuations of stoichiometry. The image intensities may be computed using n-beam dynamical diffraction theory involving several hundred beams (Fejes, this conference). However it is still important to have a suitable approximation to provide an immediate rough estimate of contrast and an evaluation of the intuitive interpretation in terms of an amplitude object.For crystals 100 to 150Å thick containing moderately heavy atoms the phase changes of the electron wave vary by about 10 radians suggesting that the “optimum defocus” theory of amplitude contrast for thin phase objects due to Scherzer and others can not apply, although it does predict the right defocus for optimum imaging.

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Electron microscopy study of reactively sputter-deposited Ti/N films on silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131449 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1362-1363

Author(s):

V. C. Kannan ◽

A. K. Singh ◽

R. B. Irwin ◽

S. Chittipeddi ◽

F. D. Nkansah ◽

...

Keyword(s):

Integrated Circuits ◽

Large Scale ◽

Hexagonal Phase ◽

Microscopy Study ◽

Electron Microscopy Study ◽

Process Conditions ◽

Tin Films ◽

Wide Range ◽

Fcc Phase ◽

Circuits Vlsi

Titanium nitride (TiN) films have historically been used as diffusion barrier between silicon and aluminum, as an adhesion layer for tungsten deposition and as an interconnect material etc. Recently, the role of TiN films as contact barriers in very large scale silicon integrated circuits (VLSI) has been extensively studied. TiN films have resistivities on the order of 20μ Ω-cm which is much lower than that of titanium (nearly 66μ Ω-cm). Deposited TiN films show resistivities which vary from 20 to 100μ Ω-cm depending upon the type of deposition and process conditions. TiNx is known to have a NaCl type crystal structure for a wide range of compositions. Change in color from metallic luster to gold reflects the stabilization of the TiNx (FCC) phase over the close packed Ti(N) hexagonal phase. It was found that TiN (1:1) ideal composition with the FCC (NaCl-type) structure gives the best electrical property.

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