Microstructure of Pvd Al Deposition on CVD Tin

1997 ◽  
Vol 3 (S2) ◽  
pp. 493-494
Author(s):  
Na Zhang ◽  
Mark McNicholas ◽  
Bob Anderhalt ◽  
Evan Slow ◽  
Neil Colvin
Keyword(s):  
Sheet Resistance ◽  
Crystal Orientation ◽  
Tin Films ◽  
Tin Film ◽  
Secondary Role ◽  
Step Coverage ◽  
System 2

CVD TiN films offer promise as a barrier to Al deposition as a result of the improved conformai step coverage of this film in 0.25 μm contact holes. As an underlayer, the TiN performs a secondary role by improving electromigration (EM) resistance. This is a result of the crystal orientation of the TiN film and its influence on the orientation of the subsequent Al layer. A <111>Al orientation shows improved EM resistance; however, CVD TiN has a preferred <200> orientation as opposed to a <111>PVD TiN orientation.In this study, two parts were investigated: 1) obtain a qualified PVD Al film on a CVD <200> TiN barrier in terms of sheet resistance and reflectivity utilizing MRC's Eclipse™ Mark II PVD system; 2) examine the texture of the Al film utilizing Philips XL30 SEM equipped with EDAX-DX4 EDS system and Electron Back Scatter Pattern (EBSP) system.

scholarly journals Crystal Orientation-Dependent Oxidation of Epitaxial TiN Films with Tunable Plasmonics

ACS Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 847-856
Author(s):  
Ruyi Zhang ◽  
Qian-Ying Ma ◽  
Haigang Liu ◽  
Tian-Yu Sun ◽  
Jiachang Bi ◽  
...  
Keyword(s):  
Crystal Orientation ◽  
Tin Films

Technological Features of the Thick Tin Film Deposition by with Magnetron Sputtering Form Liquid-Phase Target

2018 ◽  
Vol 781 ◽  
pp. 8-13 ◽  
Author(s):  
Mariya Makarova ◽  
Konstantin Moiseev ◽  
Alexander Nazarenko ◽  
Petr Luchnikov ◽  
Galina Dalskaya ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Amorphous Structure ◽  
Film Deposition ◽  
High Deposition Rate ◽  
Crucible Material ◽  
Tin Films ◽  
X Ray ◽  
Tin Film

Technological features of obtaining of tin films in a vacuum by liquid-phase target magnetron sputtering were reviewed. With high deposition rate the white color tin coating with amorphous structure is formed on the substrate. X-ray microanalysis of the obtained tin films showed the presence of micro-and nanoparticles of an impurity of the crucible material in the structure of the films. The use of the tantalum crucible with liquid-phase target magnetron sputtering with deposition rate of 3.2 μm / min allows obtaining ultra-pure, continuous, homogeneous tin film on a stationary substrate without impurity material of the crucible.

Upgrading the Ti/TiN Film Depositions on KP-1 Steel by Using the Anode Ring Bias Voltage

2018 ◽  
Vol 1145 ◽  
pp. 65-74 ◽  
Author(s):  
Un Hak Hwang
Keyword(s):  
Surface Temperature ◽  
Bias Voltage ◽  
Ionic Current ◽  
Surface Hardness ◽  
Plasma Source ◽  
Cross Sectional ◽  
Substrate Bias Voltage ◽  
Tin Films ◽  
Tin Film ◽  
Base Steel

By newly adopting of a two-step bias voltage-sustained nitrification of the plasma process the titanium nitride films which applied to the mold base steel KP-1 are manufactured. The two-step process of biased voltages was introduced in order to consider microscopic kinematics of Ti ion bombardments which lead to a deep study on the plasmas including surface temperature of substrates associated with nitrification the KP-1 surface. For supplying of the additional biased voltage to the conventional coater, an anode-biased ring was installed near the plasma source and it ultimately upgraded the typical method of physical vapor depositions which uniquely adopted one bias voltage applied to the substrates because the additional ring controlled both ions and electrons effectively in order to improve surface smoothness and to increase surface hardness with various values of surface temperatures of substrate and deposition times. The discharge ionic current of titanium flux was measured as functions of both the ring bias voltage and the substrate voltage using single probe. By using plasma physics for the two-step bias voltages the discrete mean-free-times, due to cyclonic motions of ions by magnetic field, were studied to show the effects of two bias voltages. The maximal hardness increase of Ti/TiN films deposited on KP-1 was 370% when the surface temperature was 370 °C, the substrate bias voltage of 800volts, and the deposition time was 55 minutes after ring bias was applied. The 2000 times-magnified cross-sectional morphologies of TiN films deposited on the carbon mold base KP-1 were taken as a function of the ring anode bias. The 1000 times-magnified photograph of the TiN-filmed surface deposited on KP-1 mold base was taken to investigate the surface morphology. In order to examine the two-step bias test with respect to both the corrosion problem and the surface hardness, the 2000 times-magnified morphological photograph of a cross-sectional Ti/TiN film which was deposited on the KP-1steel mold was taken.

Comparison of Cvd and Pvd Tungsten for Gigabit-Scale Dram Interconnections

1996 ◽  
Vol 427 ◽  
Author(s):  
John M. Drynan ◽  
Kuniaki Koyama
Keyword(s):  
Sheet Resistance ◽  
Crystal Orientation ◽  
Total Thickness ◽  
Preferential Growth ◽  
Materials Properties ◽  
Lower Resistance

AbstractThe characteristics of blanket CVD-W and PVD-W films with and without TiN/Ti underlayers have been investigated in terms of both materials properties such as resistance, stress, morphology, crystallinity, and composition, and prospective applications such as for DRAM bit line interconnections. The presence of a TiN underlayer has been found to induce preferential growth of dominant W (110) crystal orientation for both CVD-W and PVD-W whereas absence of TiN results in a W film of mixed W (110), (200), and (211) crystallites. Sheet resistance measurements of both blank films and conductor lines have shown that a 200nm-thick PVD-W film yields a lower resistance than a similar film with TiN underlayer and hence larger total thickness. This correspondence of W (110) intensity with resistance implies that reduction of the (110) oriented crystallites within a W film can yield lower resistances. Thus, by elimination of the TiN/Ti underlayer, monolayer PVD-W or CVD-W with a PVD-W underlayer can be effectively adapted to quarter-micron conductors for bit line interconnections and related structures in DRAM memory and other ULSI devices.

Surface Properties of TiN Films on AZ 31 Magnesium Alloys Deposited by Magnetron Sputtering Technique

2011 ◽  
Vol 314-316 ◽  
pp. 53-57 ◽  
Author(s):  
Xiang Rong Zhu ◽  
Nai Ci Bing ◽  
Zhong Ling Wei ◽  
Qiu Rong Chen
Keyword(s):  
Magnetron Sputtering ◽  
Surface Properties ◽  
Structural Defects ◽  
Micro Hardness ◽  
Dense Structure ◽  
Tin Films ◽  
Tin Film ◽  
Indentation Experiment ◽  
The Stability ◽  
Electronic Microscope

TiN films were deposited on the AZ 31 magnesium alloy substrates by d.c. magnetron sputtering technique. The surface properties of the films were investigated. The scanning electronic microscope observations reveal the dense structure characteristics of as-deposited TiN films. Under 200°C heat treatment for 30 minutes or 4 times’ heat cycles at 85°C for one hour, no structural defects such as cracks are observed on the surface of the films. Adhesion experiment further demonstrates the stability of the film and the strong combination between the film and the substrate. Nano-indentation experiment shows that the average micro-hardness of TiN film reaches 23.85 Gpa. Finally, the corrosion experiments in simulated body fluid initially reveal the degradation property of TiN film.

Improved Conformality of CVD Titanium Nitride Films

1998 ◽  
Vol 555 ◽  
Author(s):  
Xinye Liu ◽  
Yuan Z. LU ◽  
Roy G. Gordon
Keyword(s):  
Titanium Nitride ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Nitrogen Gas ◽  
Silicon Dioxide Layer ◽  
Ammonia Gas ◽  
Tin Films ◽  
Step Coverage ◽  
Novel Approach ◽  
Sticking Coefficients

AbstractWe demonstrate a novel approach to improving the step coverage of thin films made by chemical vapor deposition (CVD). Titanium nitride (TiN) films were deposited by atmospheric pressure CVD using tetrakis(diethylamido)titanium vapor (TDEAT) and ammonia gas (NH3) carried in nitrogen gas. Trimethylamine (NMe3) gas was added during some of the depositions. The substrates were patterned silicon wafers having holes with aspect ratio of 3.5 through a silicon dioxide layer. We discovered that the step coverage was significantly increased for TiN films made with NMe3. At 320 °C, the step coverage was increased from 70% to nearly 100%. Within the range of deposition temperatures used in our study, 320 °C to 370 °C, the amount of improvement increased as the deposition temperature decreased. The trimethylamine did not increase the resistivity or the impurity levels in the films, but it did reduce the growth rate slightly. We suggest that the trimethylamine adsorbs onto the surface, temporarily blocking some of the sites on which growth could take place. Thus the effective sticking coefficients for the precursors are decreased, and the step coverage is increased.

Characterisation of Titanium Nitride Thin Films Deposited by Cathodic Arc Plasma Technique on AISI D6 Tool Steel

2005 ◽  
Vol 498-499 ◽  
pp. 717-721 ◽  
Author(s):  
R.A. Vieira ◽  
Maria do Carmo de Andrade Nono
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Tool Steel ◽  
Preferred Orientation ◽  
Interface Region ◽  
Tin Films ◽  
Tin Film ◽  
Electron Image ◽  
Steel Substrates ◽  
Cathodic Arc

TiN thin film has been produced on the surface of AISI D6 tool steel by using a titanium interlayer. In this work, the morphology, the microstructure and interface depth profile of TiN films deposited at two substrate temperatures (220 oC and 450 oC) in the coating process are presented and discussed. The AISI D6 tool steel substrates were coated with titanium thin film as the underlayer and with TiN thin film as the top layer. They were deposited by conventional cathodic arc process. The surfaces of TiN films were observed by scanning electron microscopy (SEM). The microstructure of these samples was analysed by X-ray diffractometry (XRD). The influence of the substrate temperature on the TiN film-Ti film-AISI D6 interface region were investigated by energy dispersive spectrometry (EDS) and its cross section were observed using backscattered electron image (BEI). The results showed that TiN films deposited at 220 oC formed a film of strongly (111) preferred orientation, while in 450 oC formed a film of (111) and (220) preferred orientation. The thickness of the TiN films increased with increasing substrate temperature. The results show that the interface region of the TiN film-Ti film-AISI D6 substrate system was significantly improved when higher substrate temperature during deposition is used.

NON-LINEAR EFFECTS OF Ti EMISSION ON TIN FILM DEPOSITION

2002 ◽  
Vol 16 (01n02) ◽  
pp. 254-260 ◽  
Author(s):  
MARVIN CHAN ◽  
S. XU ◽  
N. JIANG ◽  
J. LONG ◽  
C. H. DIONG
Keyword(s):  
Inductively Coupled Plasma ◽  
Optical Emission ◽  
Film Deposition ◽  
Tin Films ◽  
Inductively Coupled ◽  
Tin Film ◽  
Current Variation ◽  
Non Linear ◽  
Linear Effects ◽  
Deposition Processes

Non-linear effects on Ti emission during TiN synthesis in an inductively coupled plasma assisted DC magnetron sputtering system have been investigated. TiN films are deposited on stainless steel 304 substrates, using N 2 + Ar mixture in the absence and presence of RF current variation. In-situ measurements of the optical emission collected during the deposition processes indicate differences in the intensities of the Ti species involved. Film characterizations indicate that such plasma non-linearity plays a pivotal role in the eventual film properties. Highly orientated (111) TiN films deposited under the same RF power were found to correspond to two different hardness values, one being 2240Hv and is 40% harder than the other.

Diffusion Barrier Properties of the Tin Films Prepared by Ecr Pecvd Method

1998 ◽  
Vol 514 ◽  
Author(s):  
Hye-Lyun Park ◽  
Seong-Soo Jang ◽  
Won-Jong Lee
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties ◽  
Device Structure ◽  
Film Properties ◽  
Tin Films ◽  
Cu Metallization ◽  
Tin Film ◽  
Diffusion Barrier Layer ◽  
Via Holes ◽  
Metallization Process

ABSTRACTTiN film is used as a diffusion barrier layer in contact and via holes in the metallization process of the microelectronics. In most cases, TiN film has been prepared by sputtering which has limited conformality. With the shrinkage of the dimension of the device structure there has been an urgent request for new deposition methods which offer better conformality. Recently, modified PVD systems like highly ionized sputtering system and CVD systems like MOCVD and PECVD systems have been developed.We prepared TiN films with TIC4, N2, and H2 in an ECR PECVD system. TiN films prepared at the temperature of 450°C had resistiveity lower than 50 μm Ω cm and better step coverage than those prepared by PVD system. Barrier properties of the TiN films against Cu were investigated and related with the film properties like composition and microstructure.The Cu/TiN/Si structure were annealed in an H2/Ar atmosphere for 30 min at the temperature range from 500 to 600°C.Plasma treatment and thermal treatment during and/or after the deposition in various atmosphere were adopted to change the composition and the microstructure of the TiN films.The composition of the film was analyzed with AES, the microstructure of the film was observed with SEM and the crystallinity was analyzed with XRD. The electrical resistivity was measured with four-point probe method. Barrier properties of the films were studied again Cu metallization. The change in the resistivity and the structure of the Cu/TiN/Si were investigated after the heat-treatment.

The Optimization of TiN Film Deposited by DC Magnetron Sputtering Provided for Al Diffusion Barrier

2010 ◽  
Vol 93-94 ◽  
pp. 578-582
Author(s):  
A. Pankiew ◽  
Win Bunjongpru ◽  
N. Somwang ◽  
S. Porntheeraphat ◽  
Sirapat Pratontep ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Flow Rate ◽  
Diffusion Barrier ◽  
Rate Ratio ◽  
Growth Conditions ◽  
Flow Rate Ratio ◽  
Dc Magnetron Sputtering ◽  
Tin Films ◽  
Tin Film

Titanium nitride (TiN) film has been widely used as a diffusion barrier layer for VLSI contact metallization because TiN is an excellent barrier against inter-diffusion between Al and Si substrate or silicide. In this work, we studied the properties of TiN films deposited by DC magnetron sputtering with varying N2:Ar flow rate ratio in order to optimize growth conditions and film properties provided for Al diffusion barrier purpose. The TiN films were deposited at the constant pressure level and sputtering time. The crystalline orientation, composition and electrical properties of deposited TiN films were characterized by XRD, AES-depth profile and Four Point Probe measurement, respectively. The XRD results show that the deposited TiN film has two preferred orientations of TiN(111) and TiN(200) planes. The highest intensity of the TiN(111) plane was obtained when the N2:Ar flow rate ratio was 3:1. The electrical resistivity was increased when the N2:Ar flow rate ratio was decreased. The minimum electrical resistivity is 127.8 μΩ-cm when the N2:Ar flow rate ratio is 3:1.

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