Spectral Efficiency and Energy Efficiency of Pulse-Amplitude Modulation Using 1.3 μm Wafer-Fusion VCSELs for Optical Interconnects

ACS Photonics ◽  
2017 ◽  
Vol 4 (8) ◽  
pp. 2018-2024 ◽  
Author(s):  
Philip Wolf ◽  
Hui Li ◽  
Andrei Caliman ◽  
Alexandru Mereuta ◽  
Vladimir Iakovlev ◽  
...  
2021 ◽  
Vol 11 (9) ◽  
pp. 4284
Author(s):  
Oskars Ozolins ◽  
Xiaodan Pang ◽  
Aleksejs Udalcovs ◽  
Richard Schatz ◽  
Sandis Spolitis ◽  
...  

We experimentally evaluate the high-speed on–off keying (OOK) and four-level pulse amplitude modulation (PAM4) transmitter’s performance in C-band for short-reach optical interconnects. We demonstrate up to 100 Gbaud OOK and PAM4 transmission over a 400 m standard single-mode fiber with a monolithically integrated externally modulated laser (EML) having 100 GHz 3 dB bandwidth with 2 dB ripple. We evaluate its capabilities to enable 800 GbE client-side links based on eight, and even four, optical lanes for optical interconnect applications. We study the equalizer’s complexity when increasing the baud rate of PAM4 signals. Furthermore, we extend our work with numerical simulations showing the required received optical power (ROP) for a certain bit error rate (BER) for the different combinations of the effective number of bits (ENOB) and extinction ratio (ER) at the transmitter. We also show a possibility to achieve around 1 km dispersion uncompensated transmission with a simple decision feedback equalizer (DFE) for a 100 Gbaud OOK, PAM4, and eight-level PAM (PAM8) link having the received power penalty of around 1 dB.


Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 39
Author(s):  
Masahiro Nada ◽  
Fumito Nakajima ◽  
Toshihide Yoshimatsu ◽  
Yasuhiko Nakanishi ◽  
Atsushi Kanda ◽  
...  

We discuss the structural consideration of high-speed photodetectors used for optical communications, focusing on vertical illumination photodetectors suitable for device fabrication and optical coupling. We fabricate an avalanche photodiode that can handle 100-Gbit/s four-level pulse-amplitude modulation (50 Gbaud) signals, and pin photodiodes for 100-Gbaud operation; both are fabricated with our unique inverted p-side down (p-down) design.


2019 ◽  
Vol 13 (4) ◽  
pp. 155-160 ◽  
Author(s):  
Mohammad Taghi Dabiri ◽  
Seyed Mohammad Sajad Sadough ◽  
Mohammad Ali Khalighi

Sign in / Sign up

Export Citation Format

Share Document