Metal–Semiconductor–Metal ε-Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism

ABSTRACTSolar blind detectors based on AlGaN grown by Molecular Beam Epitaxy and Metal Organic Vapor Phase Epitaxy have been fabricated and characterized. Metal Semiconductor Metal (MSM) detectors and vertical Schottky detectors have been realized, with a design that allows back side illumination. The growth was optimized in order to improve the layer quality, avoid crack formation, and provide the best detector performance. The technological process was also optimized in order to reduce the dark currents and improve the spectral rejection ratio, which is a key factor for solar blind detection. As a result, a rejection ratio of 5 decades between the UV (below 300 nm) and 400 nm, and a steep cut off limited by alloy fluctuations have been obtained. A noise equivalent power below 10 fW is obtained in MSM detectors.

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High Responsivity β-Ga2O3 Metal–Semiconductor–Metal Solar-Blind Photodetectors with Ultraviolet Transparent Graphene Electrodes

ACS Photonics ◽

10.1021/acsphotonics.7b01486 ◽

2017 ◽

Vol 5 (3) ◽

pp. 1123-1128 ◽

Cited By ~ 81

Author(s):

Sooyeoun Oh ◽

Chang-Koo Kim ◽

Jihyun Kim

Keyword(s):

High Responsivity ◽

Metal Semiconductor Metal ◽

Solar Blind

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High responsivity solar-blind metal-semiconductor-metal photodetector based on α-Ga2O3

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/6.0000940 ◽

2021 ◽

Vol 39 (3) ◽

pp. 033410

Author(s):

Jinho Bae ◽

Dae-Woo Jeon ◽

Ji-Hyeon Park ◽

Jihyun Kim

Keyword(s):

High Responsivity ◽

Metal Semiconductor Metal ◽

Solar Blind

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High-Responsivity Solar-Blind Ultraviolet Photodetectors Based on Carbon Nanodots/Graphene Hybrids

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3051111 ◽

2021 ◽

Vol 68 (3) ◽

pp. 1101-1106

Author(s):

Yong Fang ◽

Zhiwei Zhao ◽

Mengru Zhu ◽

Zhengjin Weng ◽

Chao Fang ◽

...

Keyword(s):

Carbon Nanodots ◽

High Responsivity ◽

Solar Blind ◽

Ultraviolet Photodetectors

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High-Responsivity Solar-Blind Photodetector Based on $ \hbox{Mg}_{0.46}\hbox{Zn}_{0.54}\hbox{O}$ Thin Film

IEEE Electron Device Letters ◽

10.1109/led.2012.2196675 ◽

2012 ◽

Vol 33 (7) ◽

pp. 1033-1035 ◽

Cited By ~ 50

Author(s):

Qinghong Zheng ◽

Feng Huang ◽

Jin Huang ◽

Qichan Hu ◽

Dagui Chen ◽

...

Keyword(s):

Thin Film ◽

High Responsivity ◽

Solar Blind

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The Characteristics of Aluminum-Gallium-Zinc-Oxide Ultraviolet Phototransistors by Co-Sputtering Method

Electronics ◽

10.3390/electronics10050631 ◽

2021 ◽

Vol 10 (5) ◽

pp. 631

Author(s):

Wei-Lun Huang ◽

Sheng-Po Chang ◽

Cheng-Hao Li ◽

Shoou-Jinn Chang

Keyword(s):

Zinc Oxide ◽

Thin Film Transistors ◽

High Performance ◽

Wide Bandgap ◽

Visible Light Region ◽

Current Ratio ◽

Rejection Ratio ◽

Light Region ◽

Sputtering Power ◽

Solar Blind

In this thesis, Aluminum-Gallium-Zinc oxide (AGZO) photo thin film transistors (PTFTs) fabricated by the co-sputtered method are investigated. The transmittance and absorption show that AGZO is highly transparent across the visible light region, and the bandgap of AGZO can be tuned by varying the co-sputtering power. The AGZO TFT demonstrates high performance with a threshold voltage (VT) of 0.96 V, on/off current ratio of 1.01 × 107, and subthreshold swing (SS) of 0.33 V/dec. Besides, AGZO has potential for solar-blind applications because of its wide bandgap. The AGZO PTFT of this research can achieve a rejection ratio of 4.31 × 104 with proper sputtering power and a rising and falling time of 35.5 s and 51.5 s.

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