High Performance Solar Blind Detectors based on AlGaN grown by MBE and MOCVD

2003 ◽  
Vol 798 ◽  
Author(s):  
Jean-Yves DUBOZ ◽  
Jean-Luc Reverchon ◽  
Mauro Mosca ◽  
Nicolas Grandjean ◽  
Franck Omnes
Keyword(s):  
High Performance ◽  
Blind Detection ◽  
Back Side ◽  
Detector Performance ◽  
Rejection Ratio ◽  
Metal Semiconductor Metal ◽  
Solar Blind ◽  
Key Factor ◽  
Metal Organic ◽  
Dark Currents

ABSTRACTSolar blind detectors based on AlGaN grown by Molecular Beam Epitaxy and Metal Organic Vapor Phase Epitaxy have been fabricated and characterized. Metal Semiconductor Metal (MSM) detectors and vertical Schottky detectors have been realized, with a design that allows back side illumination. The growth was optimized in order to improve the layer quality, avoid crack formation, and provide the best detector performance. The technological process was also optimized in order to reduce the dark currents and improve the spectral rejection ratio, which is a key factor for solar blind detection. As a result, a rejection ratio of 5 decades between the UV (below 300 nm) and 400 nm, and a steep cut off limited by alloy fluctuations have been obtained. A noise equivalent power below 10 fW is obtained in MSM detectors.

scholarly journals High-Performance Solar-Blind AlGaN Schottky Photodiodes

2003 ◽  
Vol 8 ◽  
Author(s):  
Necmi Biyikli ◽  
Tolga Kartaloglu ◽  
Orhan Aytur ◽  
Ibrahim Kimukin ◽  
Ekmel Ozbay
Keyword(s):  
High Speed ◽  
High Performance ◽  
Reverse Bias ◽  
Blind Detection ◽  
Spectral Responsivity ◽  
Noise Floor ◽  
Current Voltage ◽  
Solar Blind ◽  
Dark Currents ◽  
Device Responsivity

High-performance solar-blind AlGaN-based Schottky photodiodes have been demonstrated. The detectors were fabricated on MOCVD-grown AlGaN/GaN hetero-structures using a microwave-compatible fabrication process. Current-voltage, spectral responsivity, noise, and high-speed characteristics of the detectors were measured and analyzed. Dark currents lower than 1 pA at bias voltages as high as 30 V were obtained. True solar-blind detection was achieved with a cut-off wavelength lower than 266 nm. A peak device responsivity of 78 mA/W at 250 nm was measured under 15 V reverse bias. A visible rejection of more than 4 orders of magnitude was observed. The solar-blind photodiodes exhibited noise densities below the measurement setup noise floor of 3×10−29 A2/Hz around 10 KHz. High-speed measurements at the solar-blind wavelength of 267 nm resulted in 3-dB bandwidths as high as 870 MHz.

scholarly journals The Characteristics of Aluminum-Gallium-Zinc-Oxide Ultraviolet Phototransistors by Co-Sputtering Method

Electronics ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 631
Author(s):  
Wei-Lun Huang ◽  
Sheng-Po Chang ◽  
Cheng-Hao Li ◽  
Shoou-Jinn Chang
Keyword(s):  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Wide Bandgap ◽  
Visible Light Region ◽  
Current Ratio ◽  
Rejection Ratio ◽  
Light Region ◽  
Sputtering Power ◽  
Solar Blind

In this thesis, Aluminum-Gallium-Zinc oxide (AGZO) photo thin film transistors (PTFTs) fabricated by the co-sputtered method are investigated. The transmittance and absorption show that AGZO is highly transparent across the visible light region, and the bandgap of AGZO can be tuned by varying the co-sputtering power. The AGZO TFT demonstrates high performance with a threshold voltage (VT) of 0.96 V, on/off current ratio of 1.01 × 107, and subthreshold swing (SS) of 0.33 V/dec. Besides, AGZO has potential for solar-blind applications because of its wide bandgap. The AGZO PTFT of this research can achieve a rejection ratio of 4.31 × 104 with proper sputtering power and a rising and falling time of 35.5 s and 51.5 s.

Metal–Semiconductor–Metal ε-Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism

ACS Photonics ◽  
2020 ◽  
Vol 7 (3) ◽  
pp. 812-820 ◽  
Author(s):  
Yuan Qin ◽  
Liheng Li ◽  
Xiaolong Zhao ◽  
Gary S. Tompa ◽  
Hang Dong ◽  
...  
Keyword(s):  
High Responsivity ◽  
Rejection Ratio ◽  
Metal Semiconductor Metal ◽  
Solar Blind

Trichloride-Hydride Vpe: A Hybrid Regrowth Process for III-V Epitaxial Heterostructures

1989 ◽  
Vol 145 ◽  
Author(s):  
M. A. Digiuseppe ◽  
V. D. Mattera ◽  
J. Brown ◽  
L. Marchut ◽  
D. T. Ekholm ◽  
...  
Keyword(s):  
High Performance ◽  
Light Sources ◽  
Very High Frequency ◽  
Performance Requirements ◽  
Transmission Electron ◽  
Device Structures ◽  
Metal Organic ◽  
Epitaxial Heterostructures ◽  
Dark Currents

AbstractInP based alloy epitaxial heterostructures currently are being developed as light sources and detectors for optoelectronic applications. High performance requirements at very high frequency operation have resulted in the need for complex device structures which can require one or more epitaxial steps. As a result, hybrid growth techniques combining LPE with either hydride VPE, trichloride VPE or metal organic CVD previously have been used to grow emitter and photodetector heterostructures. In this paper, a hybrid trichloride-hydride VPE growth technique for complex heterostructures is described. Trichloride VPE which is particularly suited for certain regrowth applications because of its inherent in-situ etching capability has been successfully utilized to regrow low-doped, high purity InP on InP/InGaAs/InGaAsP heterostructures grown by hydride VPE. Transmission electron microscopy has shown that the regrowth interface is free of major defects and dislocations. P-diffused APD mesa devices obtained from these structures were operated with fields at the regrowth interface as high as 3.8 × 105V/cm. Primary dark currents were observed as low as 1.4nA.

Solar Blind (Al,Ga)N Metal-Semiconductor-Metal Devices for High Performance Flame Detection

2003 ◽  
Vol 764 ◽  
Author(s):  
Mauro Mosca ◽  
Jean-Luc Reverchon ◽  
Nicolas Grandjean ◽  
Franck Omnès ◽  
Jean-Yves Duboz ◽  
...  
Keyword(s):  
Dark Current ◽  
High Performance ◽  
Crack Density ◽  
Chemical Vapor ◽  
Cutoff Wavelength ◽  
Metal Semiconductor Metal ◽  
Solar Blind ◽  
New Process ◽  
Flame Detection ◽  
Level Process

AbstractIn this work we report on solar blind (Al,Ga)N photovoltaic metal-semiconductor-metal (MSM) detectors with a cutoff wavelength as short as ∼270 nm. (Al,Ga)N heterostructures, that allow backside illumination, were grown on sapphire substrates by both metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). We observed that both the interdigitated electrodes and the contact areas contribute to the overall photocurrent. In order to avoid the parasitic current due to the contact pads, we developed a new process where the electrodes are deposited on the (Al,Ga)N surface whereas the contact pads are deposited on an insulator (dielectric) layer besides the electrodes. Some layers develop microcracks related to excess stress. In that case, we showed that both the dark current and the responsivity strongly depend on the crack density. By using our two-level process, we could reduce the parasitic effects of cracks on the dark current. Several dielectrics were tested and our results are reported; values of dark current < 10 fA have been measured at 10 V bias voltage. An extremely high performance can then be reached in these ultraviolet solar blind detectors.

A high-performance ultraviolet solar-blind photodetector based on a β-Ga2O3 Schottky photodiode

2019 ◽  
Vol 7 (44) ◽  
pp. 13920-13929 ◽  
Author(s):  
Zeng Liu ◽  
Xia Wang ◽  
Yuanyuan Liu ◽  
Daoyou Guo ◽  
Shan Li ◽  
...  
Keyword(s):  
High Performance ◽  
Blind Detection ◽  
Solar Blind ◽  
Schottky Photodiode

A high-performance and easily fabricated Ni/β-Ga2O3 Schottky photodiode was developed for ultraviolet solar-blind detection.

scholarly journals Characteristics of Metal–Semiconductor–Metal Ultraviolet Photodetectors Based on Pure ZnO/Amorphous IGZO Thin-Film Structures

2021 ◽  
Vol 2021 ◽  
pp. 1-6
Author(s):  
Kin-Tak Lam ◽  
Sheng-Joue Young ◽  
Yen-Lin Chu ◽  
Chi-Nan Tsai ◽  
Tung-Te Chu ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Rf Magnetron Sputtering ◽  
Indium Gallium Zinc Oxide ◽  
Pure Zinc ◽  
Glass Substrates ◽  
Rejection Ratio ◽  
Light Region ◽  
Metal Semiconductor Metal ◽  
Dark Currents

In this study, metal–semiconductor–metal-structured ultraviolet (UV) photodetectors (PDs) based on pure zinc oxide (ZnO) and amorphous indium gallium zinc oxide (a-IGZO) thin films were fabricated and characterized. The ZnO seed layers were deposited on Corning glass substrates via a radio frequency (RF) magnetron sputtering technique. Results showed that under a 5 V applied bias; the dark currents of the pure ZnO and a-IGZO thin films were 0.112 pA and 2.85 nA, respectively. Meanwhile, the UV-to-visible rejection ratio of the pure ZnO and a-IGZO thin films were 14.33 and 256, respectively. Lastly, the PDs of thea-IGZO thin films had a lower leakage current and higher rejection ratio than that of the pure ZnO thin films from the UV to visible light region.

Construction of a β-Ga2O3-based metal–oxide–semiconductor-structured photodiode for high-performance dual-mode solar-blind detector applications

2020 ◽  
Vol 8 (15) ◽  
pp. 5071-5081 ◽  
Author(s):  
Zeng Liu ◽  
Shan Li ◽  
Zuyong Yan ◽  
Yuanyuan Liu ◽  
Yusong Zhi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Performance ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Blind Detection ◽  
Dual Mode ◽  
Zero Bias ◽  
Solar Blind

A dual-mode, sensitive β-Ga2O3 MOS-structured photodiode is constructed to perform solar-blind detection, showing high-performances and operations at zero bias with a high external quantum efficiency of 16.37% and specific detectivity of 1011 Jones.

High-performance back-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors

2000 ◽  
Vol 36 (22) ◽  
pp. 1866 ◽  
Author(s):  
B. Yang ◽  
D.J.H. Lambert ◽  
T. Li ◽  
C.J. Collins ◽  
M.M. Wong ◽  
...  
Keyword(s):  
High Performance ◽  
Metal Semiconductor Metal ◽  
Solar Blind ◽  
Back Illuminated
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