Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide

2014 ◽  
Vol 6 (22) ◽  
pp. 19744-19751 ◽  
Author(s):  
Tony Schenk ◽  
Uwe Schroeder ◽  
Milan Pešić ◽  
Mihaela Popovici ◽  
Yuriy V. Pershin ◽  
...  
2021 ◽  
Vol 42 (4) ◽  
pp. 517-520
Author(s):  
Seongho Kim ◽  
Seung Hwan Lee ◽  
Min Ju Kim ◽  
Wan Sik Hwang ◽  
Hyun Soo Jin ◽  
...  

2012 ◽  
Vol 112 (3) ◽  
pp. 034103 ◽  
Author(s):  
Julia Glaum ◽  
Yuri A. Genenko ◽  
Hans Kungl ◽  
Ljubomira Ana Schmitt ◽  
Torsten Granzow

2015 ◽  
Vol 99 ◽  
pp. 240-246 ◽  
Author(s):  
Dayu Zhou ◽  
Yan Guan ◽  
Melvin M. Vopson ◽  
Jin Xu ◽  
Hailong Liang ◽  
...  

2018 ◽  
Vol 39 (8) ◽  
pp. 1163-1166 ◽  
Author(s):  
Cheng-Hsien Wu ◽  
Shih-Kai Lin ◽  
Chih-Hung Pan ◽  
Po-Hsun Chen ◽  
Wen-Yan Lin ◽  
...  

2012 ◽  
Vol 26 (25) ◽  
pp. 1250161
Author(s):  
MING DONG ◽  
HAO WANG ◽  
LIANGPING SHEN ◽  
CONG YE ◽  
QINXIANG WEI

High dielectric hafnium oxide films were grown by magnetron sputtering and post heat treatment in nitrogen atmosphere at 500°C for 30 min using vacuum annealing furnace. The film keeps amorphous at 500°C and has better interface quality as revealed by X-ray diffraction and transmission electron microscopy. The influence of TiN and Pt electrodes on the electrical property of the film was compared. For the annealed films, TiN electrode was presented as the optimal one. For the conduction mechanism of Pt / HfO 2/p- Si MOS capacitors under gate electron injection, the dominant conduction mechanism at low electric field is Schottky emission. At high electric field, the conversion of current transport mechanism from Schottky emission to trap-assisted tunneling for the annealed HfO 2 film occurs at 0.64 MV/cm.


Author(s):  
Franz Fengler ◽  
Min Hyuk Park ◽  
Tony Schenk ◽  
Milan Pešić ◽  
Uwe Schroeder

Materials ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 3884
Author(s):  
Till Mälzer ◽  
Lena Mathies ◽  
Tino Band ◽  
Robert Gorgas ◽  
Hartmut S. Leipner

P(VdF-HFP) films are fabricated via a solution casting doctor blade method using high (HVS) and low (LVS) volatile solvents, respectively. The structural properties and the ferroelectric behavior are investigated. The surface structure and crystal phase composition are found to be strongly dependent on the type of solvent. LVS leads to a rougher copolymer surface structure with large spherulites and a lower crystallinity in contrast with HVS. The crystalline phase of copolymer films fabricated with HVS consists almost exclusively of α-phase domains, whereas films from LVS solution show a large proportion of γ-phase domains, as concluded from Raman and X-ray diffraction spectra. Virgin films show no ferroelectric (FE) switching polarization at electric field amplitudes below 180 MV/m, independent of the solvent type, observed in bipolar dielectric displacement—electric field measurements. After applying electric fields of above 180 MV/m, a FE behavior emerges, which is significantly stronger for LVS films. In a repeated measurement, FE polarization switching already occurs at lower fields. A shielding effect may be related to this observation. Additionally, Raman bands of polar γ-phase increase by high-electric-field cycling for the LVS sample. The solvent used and the resulting crystal phase composition of the virgin sample is crucial for the copolymer behavior during bipolar electrical cycling.


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