Laser-induced conversion of molecular precursors to thin films and deposited layers

1990 ◽  
Vol 2 (3) ◽  
pp. 232-235 ◽  
Author(s):  
Andrew P. Magee ◽  
Peter R. Strutt ◽  
Kenneth E. Gonsalves
Keyword(s):  
Thin Films ◽  
Molecular Precursors

scholarly journals HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

2021 ◽  
Author(s):  
Yuanyuan Cao ◽  
Sha Zhu ◽  
Julien Bachmann
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Molecular Precursors ◽  
Layer Deposition

The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.

scholarly journals Deposition of cadmium sulfide and zinc sulfide thin films by aerosol-assisted chemical vapors from molecular precursors

2015 ◽  
Vol 39 ◽  
pp. 169-178 ◽  
Author(s):  
Ashfaque Ahmed MEMON ◽  
Malik DILSHAD ◽  
Neerish REVAPRASADU ◽  
Mohammad Azad MALIK ◽  
James RAFTERY ◽  
...  
Keyword(s):  
Thin Films ◽  
Cadmium Sulfide ◽  
Zinc Sulfide ◽  
Molecular Precursors

scholarly journals Chemical vapour deposition of chromium-doped tungsten disulphide thin films on glass and steel substrates from molecular precursors

2018 ◽  
Vol 6 (35) ◽  
pp. 9537-9544 ◽  
Author(s):  
Ghulam Murtaza ◽  
Sai P. Venkateswaran ◽  
Andrew G. Thomas ◽  
Paul O'Brien ◽  
David J. Lewis
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Molecular Precursors ◽  
Tungsten Disulphide ◽  
Polycrystalline Thin Films ◽  
Steel Substrates

Polycrystalline thin films of chromium doped tungsten disulphide (WS2) have been deposited onto glass and steel substrates by Aerosol-Assisted Chemical Vapour Deposition (AACVD) at 450 °C.

New Group 2 Compounds Useful for Preparation of thin films of Electronic Ceramics

1992 ◽  
Vol 271 ◽  
Author(s):  
William S. Rees ◽  
Kerstin A. Dippel ◽  
Michael W. Carris ◽  
Celia R. Caballero ◽  
Debra A. Moreno ◽  
...  
Keyword(s):  
Thin Films ◽  
Ceramic Materials ◽  
Lewis Base ◽  
Molecular Precursors ◽  
Electronic Ceramics ◽  
Cvd Growth ◽  
Group 2 ◽  
Solid State Structures ◽  
Phase Solution ◽  
Vapor Pressure Measurements

ABSTRACTWe have prepared examples of several new classes of group 2 compounds, including ether- and amine-substituted metallocenes, inter- and intra-molecular Lewis base stabilized bis(β-diketonates), and clam-shell oligioether bis(alkoxides), and investigated their use as potential sources in the preparation of ceramic materials from molecular precursors. Examinations have included vapor pressure measurements, hydrolytic, oxidative, thermal and photolytic stability, vapor phase, solution and solid state structures, and evaluation for potential CVD growth of thin films of electronic ceramics. Results to date indicate that intramolecular stabilization is more advantageous than intermolecular stabilization for achievement of optimal CVD source criteria, and that completion of the coordination sphere around the metal atom requires tuning of both ligand spatial and electronic requirements.

Phase-Controlled Deposition of Copper Sulfide Thin Films by Using Single-Molecular Precursors

2013 ◽  
Vol 2014 (3) ◽  
pp. 533-538 ◽  
Author(s):  
Saba Ashraf ◽  
Aamer Saeed ◽  
Mohammad Azad Malik ◽  
Ulrich Flörke ◽  
Michael Bolte ◽  
...  
Keyword(s):  
Thin Films ◽  
Copper Sulfide ◽  
Molecular Precursors ◽  
Controlled Deposition

scholarly journals Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices

2016 ◽  
Vol 52 (28) ◽  
pp. 5007-5010 ◽  
Author(s):  
Ruihong Zhang ◽  
Seonghyuk Cho ◽  
Daw Gen Lim ◽  
Xianyi Hu ◽  
Eric A. Stach ◽  
...  
Keyword(s):  
Thin Films ◽  
Primary Amine ◽  
Electronic Devices ◽  
Solvent Mixtures ◽  
Metal Chalcogenides ◽  
Ambient Conditions ◽  
Metal Chalcogenide ◽  
Molecular Precursors ◽  
Metal Metal ◽  
Chalcogenide Thin Films

Bulk metals and metal chalcogenides are found to dissolve in primary amine–dithiol solvent mixtures at ambient conditions.

scholarly journals Synthesis of nanostructured powders and thin films of iron sulfide from molecular precursors

RSC Advances ◽  
2018 ◽  
Vol 8 (51) ◽  
pp. 29096-29103 ◽  
Author(s):  
Laila Almanqur ◽  
Inigo Vitorica-yrezabal ◽  
George Whitehead ◽  
David J. Lewis ◽  
Paul O'Brien
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Spin Coating ◽  
Iron Sulfide ◽  
Single Source ◽  
Single Source Precursors ◽  
Molecular Precursors ◽  
Nanostructured Powders

Iron(iii) xanthate single-source precursors were used to deposit iron sulfide thin films and nanostructures by spin coating and solid state deposition.

Molecular precursors to boron nitride thin films. 2. Coadsorption and reaction of hydrazine and diborane on ruthenium(0001)

1992 ◽  
Vol 96 (1) ◽  
pp. 341-347 ◽  
Author(s):  
Charles M. Truong ◽  
Jose A. Rodriguez ◽  
D. Wayne Goodman
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Molecular Precursors
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