New Group 2 Compounds Useful for Preparation of thin films of Electronic Ceramics

1992 ◽  
Vol 271 ◽  
Author(s):  
William S. Rees ◽  
Kerstin A. Dippel ◽  
Michael W. Carris ◽  
Celia R. Caballero ◽  
Debra A. Moreno ◽  
...  
Keyword(s):  
Thin Films ◽  
Ceramic Materials ◽  
Lewis Base ◽  
Molecular Precursors ◽  
Electronic Ceramics ◽  
Cvd Growth ◽  
Group 2 ◽  
Solid State Structures ◽  
Phase Solution ◽  
Vapor Pressure Measurements

ABSTRACTWe have prepared examples of several new classes of group 2 compounds, including ether- and amine-substituted metallocenes, inter- and intra-molecular Lewis base stabilized bis(β-diketonates), and clam-shell oligioether bis(alkoxides), and investigated their use as potential sources in the preparation of ceramic materials from molecular precursors. Examinations have included vapor pressure measurements, hydrolytic, oxidative, thermal and photolytic stability, vapor phase, solution and solid state structures, and evaluation for potential CVD growth of thin films of electronic ceramics. Results to date indicate that intramolecular stabilization is more advantageous than intermolecular stabilization for achievement of optimal CVD source criteria, and that completion of the coordination sphere around the metal atom requires tuning of both ligand spatial and electronic requirements.

Electronic Ceramic Thin Films: Trends in Research and Development

MRS Bulletin ◽  
1987 ◽  
Vol 12 (7) ◽  
pp. 40-46 ◽  
Author(s):  
Bruce A. Tuttle
Keyword(s):  
Thin Films ◽  
Ceramic Materials ◽  
Ceramic Composites ◽  
High Density ◽  
Electronic Ceramics ◽  
Low Level ◽  
Ceramic Film ◽  
Electro Optic ◽  
Multilayer Ceramic ◽  
The Impact

Electronic ceramic materials research is one of the fastest growing, most highly publicized areas of materials science. Subjects receiving considerable attention include high temperature superconductors, multilayer ceramic composites for high density microelectronics packaging, and ferroelectric electro-optic thin films. A complete review of all aspects of electronic ceramics research is beyond the scope of this article, which will focus on two general topics whose development is representative of recent contributions to the field. These two areas are synthesis and characterization of electronic ceramic films,1 and controlled use of low level dopants (1,000 ppm or less) in bulk polycrystalline ceramics, thin films, and single crystals to achieve desired properties. Perspective of the progress in ceramic film development is given by a review of single-crystal synthesis and properties.Several examples of the impact that low level dopants and thin film synthesis have on electronic ceramics development are presented. Dopant concentrations of 1,000 ppm or less can have a dramatic effect on microstructural, optical, and electrical properties. For example, a decrease in aluminum content of 150 ppm resulted in an increase in grain size from 1 to 25 microns in otherwise identical ZnO varistors. Background aluminum concentrations for these varistors were less than 10 ppm. In another example, the photorefractive effect, the change in refractive index with optical light intensity, has been shown to be altered by orders of magnitude with ppm doping levels in ferroelectric electro-optic materials.Several electronic ceramic devices have recently been developed due to improvements in ceramic film processing. Examples of these devices include: 1. multilayer PZT transformers, which allow fabrication of complex monolithic passive multicom-ponent networks, 2. liquid cooled multilayer ceramic substrates, with 400×800 micron liquid transfer capillaries integrated into the multilayer structure via ceramic processing techniques for high density VLSI packaging, and 3. ferroelectric electrooptic thin films that are compatible with silicon or III-V technology. For all the above applications, synthesis of electronic ceramic materials into high purity films is essential.

Solid State Structures, Decomposition Pathways, and Vapor Phase Byproducts of Y(acac)3 Type OMVPE Precursors for thin films of Yttrium -Containing Ceramic Materials

1992 ◽  
Vol 271 ◽  
Author(s):  
William S. Ree ◽  
Henry A. Luten ◽  
Michael W. Carris ◽  
Eric J. Doskocil ◽  
Virgil L. Goedken
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Vapor Phase ◽  
Related Compound ◽  
Ceramic Materials ◽  
Organometallic Vapor Phase Epitaxy ◽  
Phase Decomposition ◽  
Solid Film ◽  
Solid State Structures ◽  
By Products

ABSTRACTSeveral useful ceramic materials target compositions contain yttrium, Y2O3 and YBa2Cu3O7-δ being the two most widely employed. One known CVD precursor for yttrium-containing thin films is Y(tmhd)3 H2O (tmhd = 2,2,6,6-tetramethylheptane-3,5-dionato). We have determined the structure and examined the vapor phase decomposition of this species. A related compound, [Y(tmod)3]2(tmod = 2,2,7-trimethyloctane-3,5-dionato), has been prepared, structurally characterized, and studied as an organometallic vapor phase epitaxy (OMVPE) precursor for Y and Y2O3 films. Mechanisms of vapor phase decomposition are discussed in terms of solid film deposits and vapor phase by-products. The two precursors are compared to each other with respect to their stability windows, defined as being bound by source volatility on the low side and source stability on the high side.

scholarly journals HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

2021 ◽  
Author(s):  
Yuanyuan Cao ◽  
Sha Zhu ◽  
Julien Bachmann
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Molecular Precursors ◽  
Layer Deposition

The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.

scholarly journals Deposition of cadmium sulfide and zinc sulfide thin films by aerosol-assisted chemical vapors from molecular precursors

2015 ◽  
Vol 39 ◽  
pp. 169-178 ◽  
Author(s):  
Ashfaque Ahmed MEMON ◽  
Malik DILSHAD ◽  
Neerish REVAPRASADU ◽  
Mohammad Azad MALIK ◽  
James RAFTERY ◽  
...  
Keyword(s):  
Thin Films ◽  
Cadmium Sulfide ◽  
Zinc Sulfide ◽  
Molecular Precursors

CVD growth of high-quality and large-area continuous h-BN thin films directly on stainless-steel as protective coatings

2021 ◽  
pp. 100135
Author(s):  
Shuai Jia ◽  
Weibing Chen ◽  
Jing Zhang ◽  
Chen-Yang Lin ◽  
Hua Guo ◽  
...  
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Protective Coatings ◽  
Large Area ◽  
High Quality ◽  
Cvd Growth

Reaction Kinetics for the Hydrolysis of Titanium Isopropoxide Carboxylate Complexes

1992 ◽  
Vol 271 ◽  
Author(s):  
Charles D. Gagliardi ◽  
Dilum Dunuwila ◽  
Beatrice A. Van Vlierberge-Torgerson ◽  
Kris A. Berglund
Keyword(s):  
Carboxylic Acids ◽  
Ceramic Materials ◽  
Titanium Isopropoxide ◽  
General Interest ◽  
Chemical Transformations ◽  
Molecular Precursors ◽  
Novel Applications ◽  
Kinetics Of ◽  
Hydrolysis Of

ABSTRACTTitanium alkoxides modified by carboxylic acids have been widely studied as the molecular precursors to ceramic materials. These alkoxide complexes have also been very useful in the formation of stable, porous, optically clear films having many novel applications such as chemical sensors, catalytic supports, and ion-exchange media. To improve the processing of these materials, it is essential to better understand the kinetics of the chemical transformations which occur.The kinetics of the hydrolysis reaction are studied for selected carboxylic acids using Raman spectroscopy to probe the chemistry of the process. The study has a special emphasis on the titanium isopropoxide-valeric acid system due to the superior quality of these films over other carboxylates. Greater knowledge of the hydrolysis kinetics allows increased control over the quality of the film materials and should be of general interest to those working with modified metal alkoxides.

Controlled sulfurization of DC sputtered Mo and W thin films for CVD growth of MoS2/WS2 heterostructures

2018 ◽  
Vol 5 (8) ◽  
pp. 086405
Author(s):  
B Raju Naik ◽  
Pawan Kumar ◽  
Viswanath Balakrishnan
Keyword(s):  
Thin Films ◽  
Cvd Growth

scholarly journals Atomistic Simulation of the Strain Driven Phase Transition in Pure Iron Thin Films Containing Twin Boundaries

Metals ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 953
Author(s):  
Yunqiang Jiang ◽  
Binjun Wang ◽  
Chun Xu ◽  
Jianguo Zhang
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Surface Orientation ◽  
Orientation Relationships ◽  
Twin Boundaries ◽  
Free Surfaces ◽  
Fraction Increase ◽  
Group 2 ◽  
Group 1 ◽  
Film Group

Using molecular dynamics (MD) simulation, the strain-induced phase transitions in pure body-centered-cubic (bcc) iron (Fe) thin films containing twin boundaries (TBs) with different TB fractions and orientations are studied. Two groups of bcc thin films with different TB-surface orientation relationships are designed. In film group 1, the (112) [ 11 1 ¯ ] TBs are perpendicular to the ( 11 1 ¯ ) free surfaces, while the (112) [ 11 1 ¯ ] TBs are parallel to the free surfaces in film group 2. We vary the TB numbers inserted into the films to study the effect of TB fraction on the phase transition. Biaxial strains are applied to the films to induce the bcc to close packed (cp) phase transition. The critical strain, at which the first phase transition takes place, decreases with the TB fraction increase in film group 1 with a perpendicular TB-surface orientation, while such a relationship is not observed in film group 2 with parallel TB-surface orientation. We focus on the free surface and TB as the nucleation positions of the new phase and the afterward growth. In addition, the dynamics of the phase transition is discussed. This work may help to understand the mechanism of phase transition in nanoscale or surface-dominant systems with pre-existing defects.

Laser-induced conversion of molecular precursors to thin films and deposited layers

1990 ◽  
Vol 2 (3) ◽  
pp. 232-235 ◽  
Author(s):  
Andrew P. Magee ◽  
Peter R. Strutt ◽  
Kenneth E. Gonsalves
Keyword(s):  
Thin Films ◽  
Molecular Precursors
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