Experimental Characterization of a Theoretically Designed Candidate p-Type Transparent Conducting Oxide: Li-Doped Cr2MnO4

2014 ◽  
Vol 26 (15) ◽  
pp. 4598-4604 ◽  
Author(s):  
Arpun R. Nagaraja ◽  
Kevin H. Stone ◽  
Michael F. Toney ◽  
Haowei Peng ◽  
Stephan Lany ◽  
...  
2019 ◽  
Vol 45 (6) ◽  
pp. 7984-7994 ◽  
Author(s):  
Ahmed Alshahrie ◽  
S. Joudakzis ◽  
A.A. Al-Ghamdi ◽  
Lyudmila M. Bronstein ◽  
Waleed E. Mahmoud

2007 ◽  
Vol 253 (11) ◽  
pp. 4819-4822 ◽  
Author(s):  
Yixian Huang ◽  
Zhenguo Ji ◽  
Chen Chen

2018 ◽  
Vol 124 (2) ◽  
Author(s):  
Anas Benyounes ◽  
Naseem Abbas ◽  
Maryama Hammi ◽  
Younes Ziat ◽  
Amine Slassi ◽  
...  

Optik ◽  
2018 ◽  
Vol 166 ◽  
pp. 317-322 ◽  
Author(s):  
Abdelhamid Bouaine ◽  
Amira Bourebia ◽  
Hassan Guendouz ◽  
Zineb Riane

2020 ◽  
Vol 15 (1) ◽  
pp. 101-107
Author(s):  
M. Karunakaran ◽  
L. Bruno Chandrasekar ◽  
K. Kasirajan ◽  
R. Chandramohan

This paper reported the preparation and characterization of transparent conducting oxide thin films. Undoped and doped ZnO thin films were prepared by SILAR method. The micro-structural and optical properties were investigated. X-ray diffraction patterns revealed that the prepared thin films are polycrystalline in nature and has a hexagonal structure. The micro-structural properties of prepared thin films were calculated and crystallite size tends to changes due to dopant. The texture coefficients have been evaluated and found to be greater than unity revealing high texturing of the film. Undoped and Mn-doped ZnO prefer the orientation of (002) but Ni-doped ZnO and Mn and Ni co-doped ZnO prefers (100) orientation. The transmittance spectra of pure and transition metal-doped films were plotted against UV-Vis-NIR region and found that the transmittance changes with dopant and nature of doping. The optical band gap values were found to be in the range of 3.00–3.39 eV. The optical constants such as extinction coefficient, refractive index, dielectric constant and optical conductivity were examined.


2002 ◽  
Vol 16 (01n02) ◽  
pp. 308-313 ◽  
Author(s):  
YUE WANG ◽  
HAO GONG ◽  
LING LIU

P-type transparent conducting oxide thin films have attracted much attention due to their potential applications in novel transparent p-n junction devices. In this work, the transparent conducting Cu-Al-O thin films were prepared by the plasma enhanced chemical vapor deposition using metal organic precursors of Cu(acac) 2 and Al(acac) 3 (acac=acetylacetonate) while the substrate temperature was varied from 700 to 800°C. The x-ray diffraction and SEM results are analyzed to investigate the structure of the as-deposited and annealed films. The films contain metal copper and small grains of CuAlO 2. After annealing, metal copper turned into CuO . Hall effect measurements reveal that these films are p-type semiconductors and the film conductivity increased with the growth temperature.


2016 ◽  
Vol 4 (1) ◽  
pp. 126-134 ◽  
Author(s):  
Leo Farrell ◽  
Emma Norton ◽  
Christopher M. Smith ◽  
David Caffrey ◽  
Igor V. Shvets ◽  
...  

The delafossite structured CuCrO2 system is well known as p-type transparent conducting oxide. We have synthesized a Cu deficient form at low process temperature maintaining its good conductive properties.


2018 ◽  
Vol 8 (1) ◽  
Author(s):  
P. Lunca-Popa ◽  
J. Afonso ◽  
P. Grysan ◽  
J. Crêpellière ◽  
R. Leturcq ◽  
...  

2012 ◽  
Vol 66 (1) ◽  
pp. 233-235 ◽  
Author(s):  
Ramesh M. Krishna ◽  
Timothy C. Hayes ◽  
Daniel Krementz ◽  
George Weeks ◽  
Adrián Méndez Torres ◽  
...  

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