Visible absorption and photocurrent spectra of epitaxially deposited phthalocyanine thin films: interpretation of exciton coupling effects

1993 ◽  
Vol 97 (11) ◽  
pp. 2699-2706 ◽  
Author(s):  
Lai Kwan Chau ◽  
Craig D. England ◽  
Siying Chen ◽  
Neal R. Armstrong
2020 ◽  
Vol 183 ◽  
pp. 05002 ◽  
Author(s):  
Hamza Belkhanchi ◽  
Younes Ziat ◽  
Maryama Hammi ◽  
Charaf Laghlimi ◽  
Abdelaziz Moutcine ◽  
...  

In this study, we have investigated the surface analysis and optoelectronic properties on the synthesis of N-CNT/TiO2 composites thin films, using sol gel method for a dye synthetized solar cell (DSSC) which is found to be simple and economical route. The titanium dioxide based solar cells are an exciting photovoltaic candidate; they are promising for the realization of large area devices. That can be synthetized by room temperature solution processing, with high photoactive performance. In the present work, we stated comparable efficiencies by directing our investigation on obtaining Sol Gel thin films based on N-CNT/TiO2, by dispersing nitrogen (N) doped carbon nanotubes (N-CNTs) powders in titanium tetraisopropoxyde (TTIP). The samples were assessed in terms of optical properties, using UV—visible absorption spectroscopic techniques. After careful analysis of the results, we have concluded that the mentioned route is good and more efficient in terms of optoelectronic properties. The gap of “the neat” 0.00w% N-CNT/TiO2 is of 3eV, which is in a good agreement with similar gap of semiconductors. The incorporated “w%NCNTs” led to diminishing the Eg with increasing N-CNTs amount. These consequences are very encouraging for optoelectronic field.


Nanophotonics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 277-281 ◽  
Author(s):  
Jorge Calvo ◽  
David Zueco ◽  
Luis Martin-Moreno

AbstractThe spectrum and energy dynamics for a system that comprises a molecule interacting with a cavity photon is analyzed, taking into account the effect of both molecular vibrations and counter-rotating terms (CR) in the dipole Hamiltonian. The CR terms do not have a strong effect on the spectrum even for moderately large values of the exciton-photon interaction. However, it is shown that the polariton subspace is governed by an effective Quantum-Rabi Hamiltonian, where polaritons act as a two-level system and the phonons play the role of cavity photons. The effect of the CR terms is amplified in the dynamics: as the vibrations reduce the effective photon-exciton coupling, small Bloch-Siegert energy shifts can bring the system out of resonance.


ACS Photonics ◽  
2020 ◽  
Vol 7 (5) ◽  
pp. 1188-1196
Author(s):  
Michelle A. Blemker ◽  
Stephen L. Gibbs ◽  
Emily K. Raulerson ◽  
Delia J. Milliron ◽  
Sean T. Roberts

2018 ◽  
Vol 10 (4) ◽  
Author(s):  
Chang Yang ◽  
Yasushi Hirose ◽  
Takuto Wakasugi ◽  
Naoki Kashiwa ◽  
Hiroki Kawai ◽  
...  

2009 ◽  
Vol 67 ◽  
pp. 121-125
Author(s):  
Chattopadhyay Sourav ◽  
Kumar Nath Tapan

Epitaxial Single-crystal ZnO thin films have been grown on c-plane (0001) sapphire by Pulsed Laser Deposition process at different substrate temperatures (300 – 800 °C) with 10-1 mbar oxygen pressure. The thicknesses of the films have been varied by varying number of pulses with a repetition rate of 10 pulse/sec. It is found that the sheet resistivity of ZnO thin films grown on c-plane sapphires are in the order of 10-2 Ω-cm and it increases with increasing substrate temperatures and film thickness. The carrier concentrations and Hall mobility are found to be in the order of 1017 cm-3 and ~195 cm2/V-s, respectively. The Hall mobility slightly decreases with increase of substrate temperature and thickness of the films. It is also found that the ZnO films are structurally uniform and well oriented with perfect wurtzite structure with c/a ratio 5.1. We have also deposited non-epitaxial ZnO films on (100) p-Silicon substrates at the same conditions. From HR FE-SEM micrographs, surface morphology of ZnO films grown at lower substrate temperature are found to be uniform compared to the films grown at higher temperatures showing non-uniformity and misoriented wurtzite structures. However, the surface morphology of ZnO flims grown epitaxially on (0001) sapphire are found to be more uniform and it does not change much with growth temperature. The resistivity of the films grown on p-Silicon at higher temperatures is in the order of 103 Ω-cm whereas films grown at lower substrate temperatures show comparatively lower resistivities (~ 102 Ω-cm). From the recorded UV-Visible absorption spectrum the band gap of the film has been estimated to be 3.38 eV.


2014 ◽  
Vol 2014 ◽  
pp. 1-12 ◽  
Author(s):  
SuPei Lim ◽  
Nay Ming Huang ◽  
Hong Ngee Lim ◽  
M. Mazhar

We report a simple and convenient method for the preparation of Ag/TiO2thin films supported on indium tin oxide, which was achieved by sonochemical deposition of Ag+on aerosol-assisted chemical vapour deposited TiO2thin films. Posttreatment was performed on the film by immersion in HCl. The as-prepared composite film was characterised by X-ray diffraction, ultraviolet-visible absorption spectroscopy, Raman spectroscopy, and field emission scanning electron microscopy. The photoelectrochemical measurements andJ-Vcharacterisation showed approximately fivefold increase in photocurrent density generation and approximately sevenfold enhancement in dye sensitiser solar cell (DSSC) conversion efficiency, which was achieved after modification of the TiO2film with HCl posttreatment and Ag particle deposition. The improved photocurrent density of 933.30 μA/cm2, as well as DSSC power conversion efficiency of 3.63% with high stability, is an indication that the as-synthesised thin film is a potential candidate for solar energy conversion applications.


2011 ◽  
Vol 199-200 ◽  
pp. 1936-1939
Author(s):  
Xiao Zhang ◽  
Hua Wang ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Ming Fang Ren

CuInS2 thin films were prepared on heated glass substrates by ultrasonic spray pyrolysis method. Structure, surface morphology and properties of films with different Cu/In ratios have been investigated. X-ray diffraction (XRD) analysis demonstrated that as-prepared CuInS2 thin films with chalcopyrite structure have a preferential orientation along the (112) direction. SEM study shows films are relatively dense and smooth, but the much bigger grains and the large coherent agglomerates appear in films (Cu/In>1.25) due to the appearance of phase Cu2S. CuInS2 thin film (Cu/In=1.25) has a strong visible absorption and its energy band gap comes up to 1.45eV.


2003 ◽  
Vol 83 (9) ◽  
pp. 1737-1739 ◽  
Author(s):  
C. L. Yang ◽  
Z. K. Tang ◽  
W. K. Ge ◽  
J. N. Wang ◽  
Z. L. Zhang ◽  
...  

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